KR970053585A

KR970053585A - Method for forming contact hole buried plug in semiconductor device

Info

Publication number: KR970053585A
Application number: KR1019950069608A
Authority: KR
Inventors: 조경수
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1995-12-30
Filing date: 1995-12-30
Publication date: 1997-07-31

Abstract

본 발명은 콘택홀이나 비아홀에 금속 플러그 형성시 단차(topology) 부위에 잔류하는 금속층을 효과적으로 제거하는 동시에 플러그의 침식에 대비할 수 있는 반도체 소자의 콘택홀 매립 플러그 형성방법을 제공하기 위한 것이다.An object of the present invention is to provide a method of forming a contact hole buried plug in a semiconductor device capable of effectively removing a metal layer remaining in a topology portion when forming a metal plug in a contact hole or a via hole and preparing for erosion of the plug.

이와 같은 목적을 달성하기 위한 본 발명의 콘택홀 매립 플러그 형성방법은 반도체 기판 상부의 산화막의 소정 부위에 형성된 콘택홀의 전면에 콘택홀을 충분히 매립할 정도의 소정 두께로 금속막을 증착하는 단계; 증착된 금속막을 산화막이 드러날 때까지 전면 식각하는 단계; 글로벌 단차 지역의 잔류 금속막이 제거될 때까지 건식식각하는 단계; 상기 단계에서 잔류물의 식각과 함께 식각된 플러그의 표면이 노출될 때까지 산화막을 전면 식각하는 단계; 전면에 금속배선막을 증착하고 사진식각 방법을 이용하여 금속배선 패턴을 형성하는 단계를 포함하는 것을 특징으로 한다.A method of forming a contact hole filling plug according to an embodiment of the present invention includes: depositing a metal film having a predetermined thickness sufficient to fill a contact hole in an entire surface of a contact hole formed at a predetermined portion of an oxide film on a semiconductor substrate; Etching the deposited metal film until the oxide film is exposed; Dry etching until the residual metal film of the global step area is removed; Etching the entire oxide film until the surface of the etched plug is exposed together with etching the residue in the step; And depositing a metal wiring layer on the entire surface and forming a metal wiring pattern using a photolithography method.

Description

Method for forming contact hole buried plug in semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명의 실시예에 따른 반도체 소자의 콘택홀 매립 플러그 형성방법을 설명하기 위한 공정 흐름도이다.2 is a flowchart illustrating a method of forming a contact hole buried plug in a semiconductor device according to an exemplary embodiment of the present invention.

Claims

Depositing a metal film to a predetermined thickness such that the contact hole is sufficiently buried in the entire surface of the contact hole formed in a predetermined portion of the oxide film on the semiconductor substrate; Etching the deposited metal film until the oxide film is exposed; Dry etching until the residual metal film of the global step area is removed; Etching the entire oxide film until the surface of the etched plug is exposed together with etching the residue in the step; And depositing a metal wiring layer on the entire surface and forming a metal wiring pattern using a photolithography method.

The method of claim 1, wherein the etching of the oxide film comprises: applying a photoresist film to completely planarize a portion of the uppermost layer of the photoresist film over the entire portion including the global step area; Etching the coated photoresist film with an oxide film until the surface of the plug is exposed; And removing the remaining photoresist film.

The method of claim 1, wherein the etching of the oxide layer comprises etching until the surface of the plug is exposed by using a chemical mechanical polishing method.

The method of claim 1, wherein the contact hole filling metal film is tungsten or an aluminum alloy.

The method of claim 1, wherein the residual metal layer is removed by a wet etching method.

※ Note: The disclosure is based on the initial application.