KR970052738A

KR970052738A - Dry etching apparatus using plasma for semiconductor device manufacturing

Info

Publication number: KR970052738A
Application number: KR1019950055689A
Authority: KR
Inventors: 허노현; 서광하; 박인영; 이관성
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1995-12-23
Filing date: 1995-12-23
Publication date: 1997-07-29

Abstract

본 발명은 반도체소자 제조공정용 건식식각장치에 관한 것으로, 특히 플라즈마를 이용한 건식식각시 공정의 균일도를 높일 수 있도록 한 반도체소자 제조용 플라즈마를 이용한 건식식각장치에 대한 것이다.The present invention relates to a dry etching apparatus for a semiconductor device manufacturing process, and more particularly to a dry etching apparatus using a plasma for semiconductor device manufacturing to increase the uniformity of the dry etching process using a plasma.

종래의 플라즈마 식각장치는 애노드 상부면에 오염이 웨이퍼의 표면에 불균일 면을 발생하게 되어 식각시 균일도 불량, 과식각, 불실각, 입자 다운을 유발시켜 장비의 점검기간을 단축하며, 기계적의 고장이 원인으로 작용하여 수율을 떨어트리는 문제점이 있었다.In the conventional plasma etching apparatus, contamination on the top surface of the anode generates a non-uniform surface on the surface of the wafer, which causes uniformity defects, over-etching, ineffectiveness, and particle down during etching, thereby shortening the inspection period of the equipment and preventing mechanical failure. There was a problem to act as a cause to drop the yield.

본 발명은 상술한 문제점을 극복하기 위한 것으로, 리프트의 핀이 슬라이드 동작되는 애노드의 홀의 상부에 이 홀의 직경보다 상대적으로 큰 직경을 갖는 공간을 형성하고 상기 핀의 상단면을 둥글에 형성한 결함방지수단을 포함하여, 웨이퍼의 균일한 식각과 아울러 장비의 공정결함을 예방함으로서 수율을 높이고자 하는 것이다.The present invention is to overcome the above-mentioned problems, the pin of the lift is formed in the upper part of the hole of the anode of the anode is formed a space having a diameter larger than the diameter of the hole and the upper surface of the pin formed in the round of the defect prevention Including the means, to increase the yield by preventing the process defects of the equipment as well as uniform etching of the wafer.

Description

Dry etching apparatus using plasma for semiconductor device manufacturing

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1A도 및 제1B도는 각각 본 발명에 따른 애노드와 리프트의 구조도.1A and 1B are structural diagrams of an anode and a lift according to the present invention, respectively.

제1C도는 상기 애노드와 리프트의 결합상태도.1C is a diagram illustrating a coupling state between the anode and the lift.

Claims

Etching equipment for semiconductor device manufacturing includes a lift having a plurality of pins for operating the wafer up and down, and an anode having a plurality of holes through which the pin can operate through the center portion and seating the wafer on the upper surface thereof. A dry etching apparatus, comprising: a defect preventing means for removing a factor of a defect occurring on the anode and the lift.

The plasma etching apparatus of claim 1, wherein the defect preventing means forms a space having a predetermined diameter relatively larger than the diameter of the hole at an upper portion of the hole of the anode.

The plasma etching apparatus of claim 1, wherein the defect preventing means is formed by rounding an upper end surface of the fin.

The semiconductor device manufacturing plasma according to claim 1, wherein the defect preventing means forms a space having a predetermined diameter relatively larger than the diameter of the hole at an upper portion of the hole of the anode, and has a rounded upper surface of the pin. Etching device.

※ Note: The disclosure is based on the initial application.