KR970052167A - Diffusion Area Formation Method with Good Substrate Surface in Semiconductor Device Manufacturing - Google Patents
Diffusion Area Formation Method with Good Substrate Surface in Semiconductor Device Manufacturing Download PDFInfo
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- KR970052167A KR970052167A KR1019950068469A KR19950068469A KR970052167A KR 970052167 A KR970052167 A KR 970052167A KR 1019950068469 A KR1019950068469 A KR 1019950068469A KR 19950068469 A KR19950068469 A KR 19950068469A KR 970052167 A KR970052167 A KR 970052167A
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- South Korea
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- ions
- implanting
- impurity
- substrate surface
- silicon
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- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
Abstract
본 발명은 반도체소자의 제조방법에 관한 것으로써, 게르마늄이온 혹은 실리콘 이온을 주입하여 비정질층을 일정깊이 이상 형성함으로써 기판표면이 양호한 확산영역을 형성하는 방법을 제공한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and provides a method of forming a diffusion region having a good substrate surface by implanting germanium ions or silicon ions to form an amorphous layer or more.
본 발명의 방법은 실리콘 기판에 SiO2산화막을 형성한 후 이온이 주입되는 부위를 에칭제거하는 단계; 상기 이온주입 부위를 통해 불순물 이온을 주입하기 전에 그 불순물의 비정거리 보가 깊은 곳까지 비정질층을 형성하기 위하여 임계 도오즈량 이상의 게르마늄 혹은 실리콘 이온을 주입하는 단계; 상기 이온주입 부위를 통해 기판내에 불순물 이온을 주입한 단계; 및 질소 분위기하에서 650℃이상의 온도에서 급속열처리함을 포함한다.The method of the present invention comprises the steps of forming an SiO 2 oxide film on a silicon substrate and etching away the sites where ions are implanted; Implanting germanium or silicon ions of a critical dose or more in order to form an amorphous layer up to a deep distance of an impurity of the impurity before implanting the impurity ions through the ion implantation site; Implanting impurity ions into the substrate through the ion implantation site; And rapid heat treatment at a temperature of at least 650 ° C. under a nitrogen atmosphere.
이에 따라 기판표면이 양호한 확산영역이 얻어진다.As a result, a diffusion region having a good substrate surface is obtained.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950068469A KR970052167A (en) | 1995-12-30 | 1995-12-30 | Diffusion Area Formation Method with Good Substrate Surface in Semiconductor Device Manufacturing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1019950068469A KR970052167A (en) | 1995-12-30 | 1995-12-30 | Diffusion Area Formation Method with Good Substrate Surface in Semiconductor Device Manufacturing |
Publications (1)
Publication Number | Publication Date |
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KR970052167A true KR970052167A (en) | 1997-07-29 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019950068469A KR970052167A (en) | 1995-12-30 | 1995-12-30 | Diffusion Area Formation Method with Good Substrate Surface in Semiconductor Device Manufacturing |
Country Status (1)
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KR (1) | KR970052167A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100310821B1 (en) * | 1998-06-15 | 2001-12-17 | 김영환 | Semiconductor defect improvement method |
-
1995
- 1995-12-30 KR KR1019950068469A patent/KR970052167A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100310821B1 (en) * | 1998-06-15 | 2001-12-17 | 김영환 | Semiconductor defect improvement method |
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