KR970052097A - Overload prevention device of bubbler for semiconductor diffusion process - Google Patents

Overload prevention device of bubbler for semiconductor diffusion process Download PDF

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Publication number
KR970052097A
KR970052097A KR1019950049203A KR19950049203A KR970052097A KR 970052097 A KR970052097 A KR 970052097A KR 1019950049203 A KR1019950049203 A KR 1019950049203A KR 19950049203 A KR19950049203 A KR 19950049203A KR 970052097 A KR970052097 A KR 970052097A
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KR
South Korea
Prior art keywords
valve
line
bubbler
way pneumatic
pneumatic valve
Prior art date
Application number
KR1019950049203A
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Korean (ko)
Other versions
KR0167286B1 (en
Inventor
이주형
Original Assignee
문정환
Lg 반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to KR1019950049203A priority Critical patent/KR0167286B1/en
Publication of KR970052097A publication Critical patent/KR970052097A/en
Application granted granted Critical
Publication of KR0167286B1 publication Critical patent/KR0167286B1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

본 발명은 반도체 확산공정용 버블러의 과부하방지장치에 관한 것으로, 종래에는 3-웨이 뉴메틱 밸브의 작동이상이나 제2 온/오프 밸브가 닫힌 상태로 공정을 진행시 버블러의 압력이 과부하가 발생하여 버블러의 파손으로 장비의 손실 및 안전사고의 위험이 있는 문제점이 있었던 바, 본 발명은 3-웨이 뉴메틱밸브(30)의 작동이상이나, 제2 온/오프 밸브가 닫힌 상태로 공정을 진행하여 과부하 발생시 제5, 제6 체크밸브(42)(44)를 통하여 제2 뉴메틱 밸브(40)으로 감지하여 공급라인(20)의 질소 흐름을 차단함으로써 버블러(26)의 파손을 방지하게 되어 장비의 손실을 방지함과 아울러 안전사고를 방지하는 효과가 있다.The present invention relates to an overload prevention device of a bubbler for a semiconductor diffusion process. In the related art, the pressure of the bubbler is overloaded when the process is performed with a malfunction of the 3-way pneumatic valve or the second on / off valve. There was a problem that there is a risk of loss of equipment and safety accidents due to breakage of the bubbler, the present invention is a malfunction of the three-way pneumatic valve 30, but the process of the second on / off valve is closed When the overload occurs by detecting the second pneumatic valve 40 through the fifth and sixth check valves 42 and 44 to block the nitrogen flow of the supply line 20 to breakage of the bubbler 26. This prevents the loss of equipment and prevents accidents.

Description

반도체 확산공정용 버블러의 과부하방지장치Overload prevention device of bubbler for semiconductor diffusion process

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명 과부하방지장치가 구비된 반도체 확산공정용 버블러의 구성을 보인 배관도.Figure 2 is a piping diagram showing the configuration of a bubbler for a semiconductor diffusion process with an overload protection device of the present invention.

Claims (2)

질소가스를 공급하기 위한 공급라인 상에 유량조절기, 2-웨이 뉴메틱 밸브, 제1 체크밸브, 제1 온/오프 밸브가 설치되어 있고, 버블러에서 기화된 공정가스를 배출하기 위한 배출라인 상에는 제2 온/오프 밸브, 제2 체크밸브, 3-웨이 뉴메틱 밸브가 설치되어 있으며, 상기 3-웨이 뉴메틱 밸브의 일측에 설치되어 공정 튜브로 공정가스를 공급하기 위한 공급라인 상에는 제3 체크밸브가 설치되어 있고, 타측의 배기라인 상에는 제4 체크밸브가 설치되어 있는 반도체 확산공정용 버블러에 있어서, 상기 공급라인 상의 2-웨이 뉴메틱 밸브와 제1 체크밸브 사이에 노말리 오픈 타입의 2-웨이 뉴메틱 밸브를 설치하고, 그 2-웨이 뉴메틱 밸브를 배출라인의 제2 온/오프 밸브와 제2 체크밸브 사이에 연결한 제1 연결라인 상에 역류를 방지하기 위한 제5 체크밸브를 설치하며, 상기 제1 연결라인을 상기 공급라인에 연결한 제2 연결라인 상에 역류 방지용 제6 체크밸브를 설치하여 과부하 발생시 소정압력이 감지되면 상기 2-웨이 뉴메틱 밸브가 잠기도록 구성된 것을 특징으로하는 반도체 확산공정용 버블러의 과부하방지장치.A flow regulator, a 2-way pneumatic valve, a first check valve, and a first on / off valve are installed on the supply line for supplying nitrogen gas, and on the discharge line for discharging the process gas vaporized from the bubbler. A second on / off valve, a second check valve, and a 3-way pneumatic valve are installed, and installed on one side of the 3-way pneumatic valve, and a third check on a supply line for supplying process gas to the process tube. In a bubbler for semiconductor diffusion process, in which a valve is provided and a fourth check valve is provided on the other exhaust line, a normally open type between a two-way pneumatic valve and a first check valve on the supply line. A fifth check for installing a two-way pneumatic valve and preventing backflow on the first connecting line connecting the two-way pneumatic valve between the second on / off valve and the second check valve of the discharge line. Install the valve And installing a sixth check valve for preventing backflow on the second connection line connecting the first connection line to the supply line so that the two-way pneumatic valve is locked when a predetermined pressure is detected when an overload occurs. Overload prevention device of bubbler for semiconductor diffusion process. 제1항에 있어서, 상기 제2 체크밸브와 3-웨이 뉴메틱 밸브 사이의 배출라인과 상기 3-웨이 뉴메틱 밸브와 제6 체크밸브 사이의 배기라인을 연결하는 제3 연결라인 상에 일반적인 제3 온/오프 밸브를 설치하여 장비 이상시 배출라인의 캐리어 질소를 배기라인으로 배출하도록 구성된 것을 특징으로 하는 반도체 확산공정용 버블러의 과부하방지장치.2. The apparatus of claim 1, further comprising: a third common line on a third connection line connecting an outlet line between the second check valve and the three-way pneumatic valve and an exhaust line between the three-way pneumatic valve and the sixth check valve. 3. An overload preventing device for a semiconductor diffusion process bubbler, characterized in that the on / off valve is installed to discharge the carrier nitrogen of the discharge line to the exhaust line in the event of equipment failure. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950049203A 1995-12-13 1995-12-13 Overload prevention system of bubbler for semiconductor diffusion prosseses KR0167286B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950049203A KR0167286B1 (en) 1995-12-13 1995-12-13 Overload prevention system of bubbler for semiconductor diffusion prosseses

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950049203A KR0167286B1 (en) 1995-12-13 1995-12-13 Overload prevention system of bubbler for semiconductor diffusion prosseses

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KR970052097A true KR970052097A (en) 1997-07-29
KR0167286B1 KR0167286B1 (en) 1999-02-01

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111066134A (en) * 2017-10-23 2020-04-24 应用材料公司 Delivery of low vapor pressure chemicals

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100485537B1 (en) * 2002-10-22 2005-04-27 동부아남반도체 주식회사 Brine drainage in a chiller and electrostatic chuck unified
KR102195387B1 (en) 2018-12-28 2020-12-24 노승호 Method for preparing p-Hydroxyacetophenone
KR20230046796A (en) 2021-09-30 2023-04-06 노승호 Method for preparing p-Hydroxyacetophenone and cosmetic composition containing p-Hydroxyacetophenone

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111066134A (en) * 2017-10-23 2020-04-24 应用材料公司 Delivery of low vapor pressure chemicals
CN111066134B (en) * 2017-10-23 2023-11-07 应用材料公司 Delivery of low vapor pressure chemicals

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Publication number Publication date
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