KR970051426A - Semiconductor memory device having a repair structure without redundancy memory cells - Google Patents

Semiconductor memory device having a repair structure without redundancy memory cells Download PDF

Info

Publication number
KR970051426A
KR970051426A KR1019950057026A KR19950057026A KR970051426A KR 970051426 A KR970051426 A KR 970051426A KR 1019950057026 A KR1019950057026 A KR 1019950057026A KR 19950057026 A KR19950057026 A KR 19950057026A KR 970051426 A KR970051426 A KR 970051426A
Authority
KR
South Korea
Prior art keywords
memory cell
redundancy
block
sense amplifier
data
Prior art date
Application number
KR1019950057026A
Other languages
Korean (ko)
Inventor
장철웅
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950057026A priority Critical patent/KR970051426A/en
Publication of KR970051426A publication Critical patent/KR970051426A/en

Links

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

리던던시 메모리셀이 없는 리페어구조를 갖는 반도체 메모리장치가 포함되어 있다. 본 발명은 메모리셀 블락과, 상기 메모리셀 블락중 페일(Fail)된 메모리셀을 선택하는 어드레스를 받아 저장하는 리던던시 어드레스 저장블락과, 상기 메모리셀 블락으로부터 메모리셀 데이터를 센싱하는 센스앰프를 구비하는 반도체 메모리장치에 있어서, 상기 리던던시 어드레스 저장블락에 저장된 어드레스가 인가될 때 상기 메모리셀이 블락으로부터 페일된 셀 데이터를 리드하는 센스앰프를 데코딩하는 센스앰프를 데코더, 상기 페일된 셀 데이터를 정정하는 데이터 정정회로를 구비하는 것을 특징으로 한다.A semiconductor memory device having a repair structure without redundancy memory cells is included. The present invention includes a memory cell block, a redundancy address storage block for receiving and storing an address for selecting a failed memory cell among the memory cell blocks, and a sense amplifier for sensing memory cell data from the memory cell block. A semiconductor memory device, comprising: a sense amplifier for decoding a sense amplifier for reading a sense amplifier that reads failed cell data from a block when an address stored in the redundancy address storage block is applied, and corrects the failed cell data. A data correction circuit is provided.

따라서 본 발명은 리던던시를 위한 메모리셀 없어도 리페어가 가능하고, 또한 칩 내에 상기 리던던시 메모리셀 블락이 없으므로 칩면적을 감소시키는 효과가 있다.Therefore, the present invention can be repaired even without a memory cell for redundancy, and since there is no redundancy memory cell block in the chip, the chip area can be reduced.

Description

리던던시 메모리셀이 없는 리페어구조를 갖는 반도체 메모리장치Semiconductor memory device having a repair structure without redundancy memory cells

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제5도는 본 발명에 따른 리던던시 메모리셀이 없는 리페어구조를 갖는 메모리장치의 블락도,5 is a block diagram of a memory device having a repair structure without a redundant memory cell according to the present invention;

제6도는 제5도의 센스앰프 데코더의 회로도.6 is a circuit diagram of the sense amplifier decoder of FIG.

Claims (2)

메모리셀 브락과, 상기 메모리셀 블락중 페일(Fail)된 메모리셀을 선택하는 어드레스를 받아 저장하는 리던던시 어드레스 저장블락과, 상기 메모리셀 블락으로부터 메모리셀 데이터를 센싱하는 센스앰프를 구비하는 반도체 메모리장치에 있어서, 상기 리던던시 어드레스 저장블락에 저장된 어드레스가 인가될 때 상기 메모리셀 블락으로부터 페일된 셀 데이터를 리드하는 센스앰프를 데코딩하는 센스앰프를 데코더; 상기 페일된 셀데이터를 정정하는 데이터 정정회로를 구비하는 것을 특징으로 하는 리던던시 메모리셀이 없는 리페어구조를 갖는 반도체 메모리장치.A semiconductor memory device comprising a memory cell block, a redundancy address storage block for receiving and storing an address for selecting a failed memory cell among the memory cell blocks, and a sense amplifier for sensing memory cell data from the memory cell block. A decoder, comprising: a sense amplifier for decoding a sense amplifier for reading failed cell data from the memory cell block when an address stored in the redundancy address storage block is applied; And a data correction circuit for correcting the failed cell data. The semiconductor memory device having a repair structure without a redundant memory cell. 제1항에 있어서, 상기 데이터 정정회로가 배타적 노아게이트(Exculsive NOR gate)로 구성되는 리던던시 메모리셀이 없는 리페어 구조를 갖는 반도체 메모리장치.The semiconductor memory device of claim 1, wherein the data correction circuit has a repair structure without a redundant memory cell including an exclusive NOR gate. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950057026A 1995-12-26 1995-12-26 Semiconductor memory device having a repair structure without redundancy memory cells KR970051426A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950057026A KR970051426A (en) 1995-12-26 1995-12-26 Semiconductor memory device having a repair structure without redundancy memory cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950057026A KR970051426A (en) 1995-12-26 1995-12-26 Semiconductor memory device having a repair structure without redundancy memory cells

Publications (1)

Publication Number Publication Date
KR970051426A true KR970051426A (en) 1997-07-29

Family

ID=66618280

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950057026A KR970051426A (en) 1995-12-26 1995-12-26 Semiconductor memory device having a repair structure without redundancy memory cells

Country Status (1)

Country Link
KR (1) KR970051426A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100441871B1 (en) * 1996-11-13 2004-10-08 주식회사 하이닉스반도체 Column repair device, especially related to increasing a repair efficiency by enabling a repair without a spare cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100441871B1 (en) * 1996-11-13 2004-10-08 주식회사 하이닉스반도체 Column repair device, especially related to increasing a repair efficiency by enabling a repair without a spare cell

Similar Documents

Publication Publication Date Title
US6957378B2 (en) Semiconductor memory device
KR910010534A (en) Redundancy Circuit of Semiconductor Memory
RU93046416A (en) SEMICONDUCTOR MEMORY DEVICE
WO2003071554A3 (en) Non-volatile redundancy adresses memory
KR920020522A (en) Semiconductor integrated circuit
EP1215678A3 (en) Semiconductor memory, and memory access method
KR970051441A (en) Flash memory device
US6131177A (en) System including a ferroelectric memory
KR890004326A (en) Semiconductor memory device
US6216248B1 (en) Integrated memory
KR950025777A (en) Semiconductor memory device
KR900013621A (en) Semiconductor device
JP4050091B2 (en) Semiconductor memory device
KR850007159A (en) Semiconductor memory device with bit error detection
KR870001598A (en) Semiconductor memory device having redundancy structure with read circuit for defective memory address
KR910010308A (en) Error Correction Circuit of EEPROM
WO2002017078A3 (en) Burst read incorporating output based redundancy
KR910014813A (en) Semiconductor memory system
KR970051426A (en) Semiconductor memory device having a repair structure without redundancy memory cells
JPS623520B2 (en)
KR960008856A (en) Semiconductor memory with redundant circuit
JPS6365547A (en) Integrated circuit with built-in memory
JPH0765586A (en) Access system for eeprom
JPS6018898A (en) Semiconductor memory device
KR980005959A (en) Fail Cell Test Method for Semiconductor Devices

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination