KR970051426A - Semiconductor memory device having a repair structure without redundancy memory cells - Google Patents
Semiconductor memory device having a repair structure without redundancy memory cells Download PDFInfo
- Publication number
- KR970051426A KR970051426A KR1019950057026A KR19950057026A KR970051426A KR 970051426 A KR970051426 A KR 970051426A KR 1019950057026 A KR1019950057026 A KR 1019950057026A KR 19950057026 A KR19950057026 A KR 19950057026A KR 970051426 A KR970051426 A KR 970051426A
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- South Korea
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- memory cell
- redundancy
- block
- sense amplifier
- data
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- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
리던던시 메모리셀이 없는 리페어구조를 갖는 반도체 메모리장치가 포함되어 있다. 본 발명은 메모리셀 블락과, 상기 메모리셀 블락중 페일(Fail)된 메모리셀을 선택하는 어드레스를 받아 저장하는 리던던시 어드레스 저장블락과, 상기 메모리셀 블락으로부터 메모리셀 데이터를 센싱하는 센스앰프를 구비하는 반도체 메모리장치에 있어서, 상기 리던던시 어드레스 저장블락에 저장된 어드레스가 인가될 때 상기 메모리셀이 블락으로부터 페일된 셀 데이터를 리드하는 센스앰프를 데코딩하는 센스앰프를 데코더, 상기 페일된 셀 데이터를 정정하는 데이터 정정회로를 구비하는 것을 특징으로 한다.A semiconductor memory device having a repair structure without redundancy memory cells is included. The present invention includes a memory cell block, a redundancy address storage block for receiving and storing an address for selecting a failed memory cell among the memory cell blocks, and a sense amplifier for sensing memory cell data from the memory cell block. A semiconductor memory device, comprising: a sense amplifier for decoding a sense amplifier for reading a sense amplifier that reads failed cell data from a block when an address stored in the redundancy address storage block is applied, and corrects the failed cell data. A data correction circuit is provided.
따라서 본 발명은 리던던시를 위한 메모리셀 없어도 리페어가 가능하고, 또한 칩 내에 상기 리던던시 메모리셀 블락이 없으므로 칩면적을 감소시키는 효과가 있다.Therefore, the present invention can be repaired even without a memory cell for redundancy, and since there is no redundancy memory cell block in the chip, the chip area can be reduced.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제5도는 본 발명에 따른 리던던시 메모리셀이 없는 리페어구조를 갖는 메모리장치의 블락도,5 is a block diagram of a memory device having a repair structure without a redundant memory cell according to the present invention;
제6도는 제5도의 센스앰프 데코더의 회로도.6 is a circuit diagram of the sense amplifier decoder of FIG.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950057026A KR970051426A (en) | 1995-12-26 | 1995-12-26 | Semiconductor memory device having a repair structure without redundancy memory cells |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1019950057026A KR970051426A (en) | 1995-12-26 | 1995-12-26 | Semiconductor memory device having a repair structure without redundancy memory cells |
Publications (1)
Publication Number | Publication Date |
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KR970051426A true KR970051426A (en) | 1997-07-29 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019950057026A KR970051426A (en) | 1995-12-26 | 1995-12-26 | Semiconductor memory device having a repair structure without redundancy memory cells |
Country Status (1)
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KR (1) | KR970051426A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100441871B1 (en) * | 1996-11-13 | 2004-10-08 | 주식회사 하이닉스반도체 | Column repair device, especially related to increasing a repair efficiency by enabling a repair without a spare cell |
-
1995
- 1995-12-26 KR KR1019950057026A patent/KR970051426A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100441871B1 (en) * | 1996-11-13 | 2004-10-08 | 주식회사 하이닉스반도체 | Column repair device, especially related to increasing a repair efficiency by enabling a repair without a spare cell |
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