KR970051347A - Program voltage driving method in nonvolatile memory device - Google Patents
Program voltage driving method in nonvolatile memory device Download PDFInfo
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- KR970051347A KR970051347A KR1019950066985A KR19950066985A KR970051347A KR 970051347 A KR970051347 A KR 970051347A KR 1019950066985 A KR1019950066985 A KR 1019950066985A KR 19950066985 A KR19950066985 A KR 19950066985A KR 970051347 A KR970051347 A KR 970051347A
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- voltage
- high voltage
- program
- memory device
- nonvolatile memory
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Abstract
본휘발성 메모리장치에서 스텝핑 프로그램 전압발생시 프로그램 출발 전압이 가장 최적화된 전압이 도리 수 있는 프로그램 전압구동 방법을 개시한다. 차동 증폭기의 기준(reference)전압 입력단에 정전압을 인가하고 부하((load) 전압 입력단에 고전압이 저항에 의해 분배된 전압을 인가하여 되어, 이 차동 증폭기의 출력이 승압회로의 작동을 컨트롤하여 특정 고전압 에벨을 얻는 회로를 구비한 불휘발성 메모리장치에 있어서, 고전압저항 분배장치가 소정의 입력신호에 의해서 저항 값이 변하여 고전압레벨을 소정의 입력신호에 의해 컨트롤하여 프로그램 출발전압을 결정할 수 있는 것을 특징으로 하는 불휘발성 메모리 장치의 프로그램 전압 구동 방법을 제공한다. 상기 고전압을 순차적으로 증가시킬 때, 프로그램이 가능한 최초 고전압 레벨의 입력신호들의 코딩을 특정기억수단에 의해 재현성 있게 최초 고전압을 발생시킬 수 있게 한다.Disclosed is a program voltage driving method capable of driving a voltage at which a program start voltage is most optimized when a stepping program voltage is generated in the present volatile memory device. By applying a constant voltage to the reference voltage input of the differential amplifier and applying a voltage whose high voltage is divided by a resistor to the load voltage input, the output of this differential amplifier controls the operation of the booster circuit to A nonvolatile memory device having a circuit for obtaining an envelope, wherein the high voltage resistance distribution device is configured to determine a program start voltage by controlling a high voltage level by a predetermined input signal by changing a resistance value by a predetermined input signal. The present invention provides a method of driving a program voltage of a nonvolatile memory device, wherein when the high voltage is sequentially increased, the first high voltage can be reproducibly generated by a specific memory means for coding the input signals of a programmable first high voltage level. .
따라서, 본 발명에 의하면 프로그램 출발 전압이 가장 최적화된 전압으로 저장하여 사용함으로써 프로그램시 프로그램 시간을 줄일 수 있으며 프로그램 셀 문턱 전압폭을 최소화하여 셀의 센싱(sensing)특성을 향상 시킬 수 있다.Therefore, according to the present invention, the program start voltage is stored and used as the most optimized voltage, thereby reducing program time during programming and minimizing the program cell threshold voltage width, thereby improving sensing characteristics of the cell.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2도는 본 발명의 실시예에 따른 고전압발생 타이밍 다이어그램이다,2 is a high voltage generation timing diagram according to an embodiment of the present invention.
제3도는 본 발명에 의한 입력신호 디코더를 나타내는 회로도이다.3 is a circuit diagram showing an input signal decoder according to the present invention.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950066985A KR970051347A (en) | 1995-12-29 | 1995-12-29 | Program voltage driving method in nonvolatile memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950066985A KR970051347A (en) | 1995-12-29 | 1995-12-29 | Program voltage driving method in nonvolatile memory device |
Publications (1)
Publication Number | Publication Date |
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KR970051347A true KR970051347A (en) | 1997-07-29 |
Family
ID=66638135
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019950066985A KR970051347A (en) | 1995-12-29 | 1995-12-29 | Program voltage driving method in nonvolatile memory device |
Country Status (1)
Country | Link |
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KR (1) | KR970051347A (en) |
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1995
- 1995-12-29 KR KR1019950066985A patent/KR970051347A/en not_active Application Discontinuation
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