KR970023365A - Voltage Generator for Bit Line Charging in Semiconductor Memory Devices - Google Patents

Voltage Generator for Bit Line Charging in Semiconductor Memory Devices Download PDF

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Publication number
KR970023365A
KR970023365A KR1019950039029A KR19950039029A KR970023365A KR 970023365 A KR970023365 A KR 970023365A KR 1019950039029 A KR1019950039029 A KR 1019950039029A KR 19950039029 A KR19950039029 A KR 19950039029A KR 970023365 A KR970023365 A KR 970023365A
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KR
South Korea
Prior art keywords
bit line
voltage
voltage generator
selector
precharge
Prior art date
Application number
KR1019950039029A
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Korean (ko)
Other versions
KR100207449B1 (en
Inventor
김명재
용명식
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950039029A priority Critical patent/KR100207449B1/en
Publication of KR970023365A publication Critical patent/KR970023365A/en
Application granted granted Critical
Publication of KR100207449B1 publication Critical patent/KR100207449B1/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

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  • Read Only Memory (AREA)
  • Dram (AREA)

Abstract

메모리 셀 어레이(memory sell array)와 전기적으로 연결된 비트라인을 빠른 시간 내에 소정의 선충전 레벨로 충전시키는 전압 발생기가 개시된다.A voltage generator is disclosed that charges a bit line electrically connected to a memory sell array to a predetermined precharge level in a short time.

본 발명에 따른 비트 라인 충전용 전압 발생기는 비트 라인의 선충전에 소요되는 서로 다른 레벨을 갖는 적어도 두 개 이상의 전압을 발생하는 전압 발생부; 그에 인가되는 제어 신호에 응답하여 상기 전압 발생부에서 발생된 전압들 중에서 하나를 선택하여 비트 라인에 제공하는 선택부; 및 상기 비트 라인의 전압과 소정의 기준 전압과를 비교하고, 비교 결과에 따라 상기 선택부를 제어하는 제어 신호를 발생하는 제어부를 포함함을 특징으로 한다.The bit line charging voltage generator according to the present invention includes a voltage generator for generating at least two or more voltages having different levels required for precharging the bit lines; A selector for selecting one of the voltages generated by the voltage generator and providing the bit line to the bit line in response to a control signal applied thereto; And a controller for comparing the voltage of the bit line with a predetermined reference voltage and generating a control signal for controlling the selector according to a comparison result.

본 발명에 따른 비트 라인 충전용 전압 발생기는 비트 라인의 전위가 선충전 전압보다 낮은 동안 비트 라인에 선충전 전압보다 높은 전압을 인가시키도록 함으로써 선충전 속도를 개선하는 효과를 갖는다.The bit line charging voltage generator according to the present invention has an effect of improving the precharge speed by applying a voltage higher than the precharge voltage to the bit line while the potential of the bit line is lower than the precharge voltage.

Description

반도체 메모리 장치의 비트 라인 충전용 전압 발생기Voltage Generator for Bit Line Charging in Semiconductor Memory Devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제4도는 본 발명에 따른 비트 라인 충전용 전압 발생기의 구성을 보이는 회로도이다.4 is a circuit diagram showing the configuration of a voltage generator for charging a bit line according to the present invention.

Claims (1)

메모리 셀 어레이에 연결된 비트 라인을 소정의 레벨로 선충전시키는 반도체 메모리 장치에 있어서, 상기 비트 라인의 선충전에 소요되는 서로 다른 레벨을 갖는 적어도 두 개 이상의 전압을 발생하는 전압 발생부; 그에 인가되는 제어 신호에 응답하여 상기 전압 발생부에서 발생된 전압들 중에서 하나를 선택하여 비트 라인에 제공하는 선택부; 및 상기 비트 라인의 전압과 소정의 기준 전압과를 비교하고, 비교결과에 따라 상기 선택부를 제어하는 제어 신호를 발생하는 제어부를 포함하며, 여기서, 상기 제어부는 상기 비트 라인의 전압이 소정의 기준전압보다 적으면 상기 선택부를 제어하여 현재 인가되고 있는 전압보다 높은 레벨의 전압을 선택하여 출력하게 하고, 반대로 크면 현재 인가되고 있는 전압보다 낮은 레벨의 전압을 선택하여 출력하게 하는 것을 특징으로 하는 비트 라인 충전용 전압 발생기.A semiconductor memory device for precharging a bit line connected to a memory cell array to a predetermined level, comprising: a voltage generator configured to generate at least two voltages having different levels required for precharging the bit line; A selector for selecting one of the voltages generated by the voltage generator and providing the bit line to the bit line in response to a control signal applied thereto; And a controller configured to compare the voltage of the bit line with a predetermined reference voltage and generate a control signal for controlling the selector according to a comparison result, wherein the controller is configured such that the voltage of the bit line is a predetermined reference voltage. If the number is smaller, the selector is controlled to select and output a voltage having a higher level than the currently applied voltage. On the contrary, if the larger value, a voltage having a lower level than the currently applied voltage is selected and output. Voltage generator. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950039029A 1995-10-31 1995-10-31 Power generator for charging bit-line of semiconductor memory KR100207449B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950039029A KR100207449B1 (en) 1995-10-31 1995-10-31 Power generator for charging bit-line of semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950039029A KR100207449B1 (en) 1995-10-31 1995-10-31 Power generator for charging bit-line of semiconductor memory

Publications (2)

Publication Number Publication Date
KR970023365A true KR970023365A (en) 1997-05-30
KR100207449B1 KR100207449B1 (en) 1999-07-15

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ID=19432527

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950039029A KR100207449B1 (en) 1995-10-31 1995-10-31 Power generator for charging bit-line of semiconductor memory

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KR (1) KR100207449B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100486200B1 (en) * 1997-08-19 2005-09-12 삼성전자주식회사 Bit line voltage generator for semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100486200B1 (en) * 1997-08-19 2005-09-12 삼성전자주식회사 Bit line voltage generator for semiconductor device

Also Published As

Publication number Publication date
KR100207449B1 (en) 1999-07-15

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