KR970051283A - Gate Drive Circuit of SMPS with Totem Pole Structure - Google Patents

Gate Drive Circuit of SMPS with Totem Pole Structure Download PDF

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Publication number
KR970051283A
KR970051283A KR1019950068634A KR19950068634A KR970051283A KR 970051283 A KR970051283 A KR 970051283A KR 1019950068634 A KR1019950068634 A KR 1019950068634A KR 19950068634 A KR19950068634 A KR 19950068634A KR 970051283 A KR970051283 A KR 970051283A
Authority
KR
South Korea
Prior art keywords
gate
smps
output terminal
transistor
fet
Prior art date
Application number
KR1019950068634A
Other languages
Korean (ko)
Other versions
KR0170211B1 (en
Inventor
김수경
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950068634A priority Critical patent/KR0170211B1/en
Publication of KR970051283A publication Critical patent/KR970051283A/en
Application granted granted Critical
Publication of KR0170211B1 publication Critical patent/KR0170211B1/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/04106—Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

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  • Electronic Switches (AREA)

Abstract

본 발명은 게이트 구동을 위한 시정수 소자로 저항과 다이오드의 전력용 소자를 이용하지 않고 패키지화된 SMPS 제어 IC내에서 모스 FET를 직접적으로 원하는 시정수로써 구동시킬 수 있는 토템플 구조를 갖는 SMPS의 게이트 구동회로에 관한 것인 바, 그 특징은 저항과 다이오드의 전력용 소자를 이용하지 않고 패키지화된 SMPS내에서 게이트를 직접적으로 원하는 시정수로 구동시킬 수 있도록 FET의 게이트 온/오프 시간 조정수단과 게이트 보호수단을 SMPS 제어용 IC의 내부에 집적시켜 FET의 게이트 구동을 위한 SMPS 제어 IC의 출력단을 구성함에 있다.The present invention provides a time constant device for driving a gate of an SMPS having a totem structure capable of driving a MOS FET directly with a desired time constant in a packaged SMPS control IC without using a resistor and a diode power device. The drive circuitry is characterized in that the gate on / off time adjustment means and gate of the FET are able to drive the gate directly to the desired time constant in the packaged SMPS without the use of resistors and diode power devices. The protection means is integrated in the SMPS control IC to form the output stage of the SMPS control IC for driving the gate of the FET.

Description

토템폴 구조를 갖는 SMPS의 게이트 구동회로Gate Drive Circuit of SMPS with Totem Pole Structure

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 의한 센스 FET를 이용한 원칩 패키지시의 게이트 구동회로의 일 실시예도.2 is an embodiment of a gate driving circuit in a one-chip package using a sense FET according to the present invention.

Claims (3)

패키지화된 SMPS내에서 게이트를 직접적으로 원하는 시정수로 구동시킬 수 있도록 FET의 게이트 온/오프 시간 조정수단과 게이트 보호수단을 SMPS 제어용 IC의 내부에 집적시켜 FET의 게이트 구동을 위한 SMPS 제어 IC의 출력단을 구성함을 특징으로 하는 토 템폴 구조를 갖는 SMPS의 게이트 구동회로.The output stage of the SMPS control IC for driving the FET by integrating the gate on / off time adjusting means and the gate protection means of the FET inside the SMPS control IC so that the gate can be directly driven to a desired time constant in the packaged SMPS. Gate driving circuit of SMPS having a totem pole structure, characterized in that the configuration. 제1항에 있어서, 상기 게이트 보호수단으로서 주 스위칭 소자인 센스 FET(21)의 게이트-소오스간 보호용 다이오드(D3)를 출력단 트랜지스터(Q14)의 에미터 전압을 제한하는 트랜지스터(Q11)의 베이스-접지간에 연결하여 출력단 전압을 작은 전류에 의해 일차적으로 제한할 수 있게 연결함을 특징으로 하는 토템폴 구조를 갖는 SMPS의 게이트 구동회로.The gate-source-protection diode D3 of the sense FET 21, which is a main switching element, as the gate protection means, the base of the transistor Q11 which limits the emitter voltage of the output transistor Q14. A gate drive circuit of a SMPS having a totem pole structure, which is connected between grounds so that an output terminal voltage can be primarily limited by a small current. 제1항에 있어서, 상기 게이트 온/오프 시간 조정수단으로서 출력단에 대해 병렬 접속인 두 저항(R7)(R8)을 출력단 전압을 일정하게 유지시키는 트랜지스터 다이오드(Q13)의 베이스 단자와 출력단 트랜지스터(Q14)의 에미터 단자와 출력단 전류 싱크용 트랜지스터(Q15)의 콜렉터 단자와의 공통 접점에 직렬로 연결하여 턴-온/오프시 게이트 충전시간과 게이트 방전시간을 조절할 수 있도록 구성함을 특징으로 하는 토템폴 구조를 SMPS의 게이트 구동회로.A base terminal and an output terminal transistor (Q14) of a transistor diode (Q13) for keeping the output terminal voltage constant for two resistors (R7) (R8) connected in parallel with the output terminal as the gate on / off time adjusting means. A totem pole characterized in that the gate charging time and the gate discharge time can be adjusted during turn-on / off by connecting to a common contact between the emitter terminal of the output terminal and the collector terminal of the output terminal current sinking transistor Q15. Structure of SMPS gate drive circuit. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950068634A 1995-12-30 1995-12-30 Gate driving circuit of smps having totem-pole structure KR0170211B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950068634A KR0170211B1 (en) 1995-12-30 1995-12-30 Gate driving circuit of smps having totem-pole structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950068634A KR0170211B1 (en) 1995-12-30 1995-12-30 Gate driving circuit of smps having totem-pole structure

Publications (2)

Publication Number Publication Date
KR970051283A true KR970051283A (en) 1997-07-29
KR0170211B1 KR0170211B1 (en) 1999-03-30

Family

ID=19448152

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950068634A KR0170211B1 (en) 1995-12-30 1995-12-30 Gate driving circuit of smps having totem-pole structure

Country Status (1)

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KR (1) KR0170211B1 (en)

Also Published As

Publication number Publication date
KR0170211B1 (en) 1999-03-30

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