KR970049215A - Temperature independent current source - Google Patents

Temperature independent current source Download PDF

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Publication number
KR970049215A
KR970049215A KR1019950061303A KR19950061303A KR970049215A KR 970049215 A KR970049215 A KR 970049215A KR 1019950061303 A KR1019950061303 A KR 1019950061303A KR 19950061303 A KR19950061303 A KR 19950061303A KR 970049215 A KR970049215 A KR 970049215A
Authority
KR
South Korea
Prior art keywords
current
transistor
current source
emitter
output
Prior art date
Application number
KR1019950061303A
Other languages
Korean (ko)
Other versions
KR0170357B1 (en
Inventor
이호진
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950061303A priority Critical patent/KR0170357B1/en
Publication of KR970049215A publication Critical patent/KR970049215A/en
Application granted granted Critical
Publication of KR0170357B1 publication Critical patent/KR0170357B1/en

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/225—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/265—Current mirrors using bipolar transistors only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

Abstract

본 발명은 온도 독립형 전류원에 관한 것으로서, 특히 온도 상승에 따라 전류값이 하강하는 제1전류를 발생하는 제1전류원; 온도 변화에 따른 상기 제1전류의 변동분을 보상하도록 전류값이 상승하는 제2전류를 발생하는 제2전류원; 및 제1전류와 제2전류가 합쳐진 출력전류가 출력되는 츌력단자를 구비하는 것을 특징으로한다.따라서, 본 발명에서는 온도에 대해 독립적인 일정한 전류를 공급할 수 있다.The present invention relates to a temperature-independent current source, and in particular, a first current source for generating a first current in which the current value decreases with increasing temperature; A second current source for generating a second current in which a current value increases to compensate for the change in the first current according to a temperature change; And an output terminal for outputting an output current obtained by combining the first current and the second current. Accordingly, in the present invention, it is possible to supply a constant current independent of temperature.

Description

온도 독립형 전류원Temperature independent current source

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 의한 온도 독립형 전류원의 구성을 나타낸 회로도.2 is a circuit diagram showing the configuration of a temperature independent current source according to the present invention.

Claims (3)

온도 상승에 따라 전류값이 하강하는 제1전류를 발생하는 제1전류원; 온도 변화에 따른 상기 제1전류의 변동분을 보상하도록 전류값이 상승하는 제2전류를 발생하는 제2전류원; 및 상기 제1전류와 제2전류가 합쳐진 출력전류가 출력되는 츌력단자를 구비하는 것을 특징으로 하는 온도 독립형 전류원.A first current source generating a first current in which the current value decreases as the temperature rises; A second current source for generating a second current in which a current value increases to compensate for the change in the first current according to a temperature change; And an output terminal for outputting an output current obtained by combining the first current and the second current. 제1항에 있어서, 상기 제1전류원은 기준전압신호가 베이스에 인가되고 제1저항을 통하여 전원전압이 에미터가 연결되고 콜렉터 접지형 제1트랜지스터; 상기 제1트랜지스터의 에미터가 베이스에 연결되고 제3저항을통하여 에미터가 접지된 제2트랜지스터; 상기 제2트랜지스터의 콜렉터 전류를 제1전류로 출력하는 제1전류미러를 구비한 것을 특징으로 하는 온도 독립형 전류원.2. The apparatus of claim 1, wherein the first current source comprises: a collector ground type first transistor having a reference voltage signal applied to the base and a power supply voltage connected to the emitter through a first resistor; A second transistor of which the emitter of the first transistor is connected to the base and the emitter is grounded through a third resistor; And a first current mirror configured to output the collector current of the second transistor as a first current. 제1항에 있어서, 상기 제2전류원은 기준전압신호가 베이스에 인가되고 제3트랜지스터; 상기 제3트랜지스터의 에미터와 접지사이에 순방향으로 직렬 연결된 복스의 다이오드들; 상기 다이오드와 접지사이에 연결된 제2저항; 및 상기 제3트랜지스터의 콜렉터 전류를 상기 제2전류로 출력하는 제2전류미러를 구비하는 것을 특징으로 하는 온도 독립형 전류원.The display device of claim 1, wherein the second current source comprises: a third transistor applied with a reference voltage signal to the base; Vox diodes connected in series in a forward direction between the emitter of the third transistor and ground; A second resistor connected between the diode and ground; And a second current mirror configured to output the collector current of the third transistor as the second current. ※ 참고사항: 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the original application.
KR1019950061303A 1995-12-28 1995-12-28 Temperature independent current source KR0170357B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950061303A KR0170357B1 (en) 1995-12-28 1995-12-28 Temperature independent current source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950061303A KR0170357B1 (en) 1995-12-28 1995-12-28 Temperature independent current source

Publications (2)

Publication Number Publication Date
KR970049215A true KR970049215A (en) 1997-07-29
KR0170357B1 KR0170357B1 (en) 1999-03-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950061303A KR0170357B1 (en) 1995-12-28 1995-12-28 Temperature independent current source

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000003932A (en) * 1998-06-30 2000-01-25 김영환 High precision current source with compensated temperature

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3866606B2 (en) * 2002-04-08 2007-01-10 Ｎｅｃエレクトロニクス株式会社 Display device drive circuit and drive method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000003932A (en) * 1998-06-30 2000-01-25 김영환 High precision current source with compensated temperature

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Publication number Publication date
KR0170357B1 (en) 1999-03-30

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