KR970049053A - Exposure device for semiconductor device manufacturing - Google Patents

Exposure device for semiconductor device manufacturing Download PDF

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Publication number
KR970049053A
KR970049053A KR1019950055691A KR19950055691A KR970049053A KR 970049053 A KR970049053 A KR 970049053A KR 1019950055691 A KR1019950055691 A KR 1019950055691A KR 19950055691 A KR19950055691 A KR 19950055691A KR 970049053 A KR970049053 A KR 970049053A
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KR
South Korea
Prior art keywords
exposure apparatus
light
semiconductor device
manufacturing
lenses
Prior art date
Application number
KR1019950055691A
Other languages
Korean (ko)
Other versions
KR0160856B1 (en
Inventor
유희용
장일진
김태영
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950055691A priority Critical patent/KR0160856B1/en
Publication of KR970049053A publication Critical patent/KR970049053A/en
Application granted granted Critical
Publication of KR0160856B1 publication Critical patent/KR0160856B1/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

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  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명은 반도체 제조공정중 포토 리소그래피를 사용하는 노광장치에 관한 것으로 특히 램프에서 발산되는 빛의 열량을 차단하여 내구성을 높인 노광장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus using photolithography in a semiconductor manufacturing process, and more particularly, to an exposure apparatus that increases durability by blocking a heat amount of light emitted from a lamp.

종래의 노광장치의 조명 광은 순간적으로 고전류를 흘려 높은 빛에너지를 형성하면 생산성은 향상되나 조명광에 직접적으로 닿는 각종 렌즈의 열화를 촉진시키게 되어 열화영향에 의해 오염된 렌즈를 통과한 빛의 강도는 떨어져 균일성 저하를 가져오게 된다.When the illumination light of the conventional exposure apparatus flows a high current instantaneously to form a high light energy, the productivity is improved, but it promotes the deterioration of various lenses that are in direct contact with the illumination light. This results in a loss of uniformity.

본 발명은 상술한 문제점을 극복하기 위한 것으로 광원소스로부터 발산되는 빛을 배열된 복수개의 렌즈 및 파트클을 투과시켜 웨이퍼에 패턴을 형성하는 반도체소자 제조용 노광장치에 있어서, 상기 렌즈의 배열상에 상기 빛의 열화성분을 제거하는 열 차단수단을 포함하여 생산성 향상과 아울러 렌즈의 수명을 연장하여 장비의 교체로 인한 비용의 절감효과를 거둘수 있도록 한 것이다.SUMMARY OF THE INVENTION The present invention has been made to overcome the above-mentioned problems, and in the exposure apparatus for manufacturing a semiconductor device for forming a pattern on a wafer by passing the light emitted from the light source through a plurality of arranged lenses and particles, the arrangement on the array of lenses Including the heat blocking means to remove the deterioration component of light, it is possible to improve productivity and extend the life of the lens to reduce the cost of equipment replacement.

Description

[발명의 명칭[Name of invention]

반도체소자 제조용 노광장치Exposure device for semiconductor device manufacturing

[도면의 간단한 설명][Brief Description of Drawings]

도면은 본 발명 노광장치의 전체적인 구성도.Figure is an overall configuration diagram of the exposure apparatus of the present invention.

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

Claims (6)

광원소스로부터 발산되는 빛을 배열된 복수개의 렌즈 및 파트클을 투과시켜 웨이퍼에 패턴을 형성하는 반도체소자 제조용 노광장치에 있어서, 상기 렌즈의 배열상에 상기 빛의 열화성분을 제거하는 열 차단수단을 포함하는 것을 특징으로 하는 반도체소자 제조용 노광장치.An exposure apparatus for manufacturing a semiconductor device in which light emitted from a light source is transmitted through a plurality of arrayed lenses and parts to form a pattern on a wafer, the apparatus comprising: a heat shielding means for removing a deterioration component of light on an array of lenses; Exposure device for manufacturing a semiconductor device, characterized in that it comprises. 제1항에 있어서, 상기 열 차단수단은 광원소스와 렌즈배열사이에 위치한 것을 특징으로 하는 반도체소자 제조용 노광장치.The exposure apparatus of claim 1, wherein the heat blocking means is located between the light source and the lens array. 제1항 또는 제2항에 있어서, 상기 열 차단수단은 제1필터와 제2필터와 이 필터들 사이에 입력(Input)렌즈가 위치하도록 구성한 것을특징으로 하는 반도체소자 제조용 노광장치.The exposure apparatus according to claim 1 or 2, wherein the heat blocking means is configured such that an input lens is positioned between the first filter, the second filter, and the filters. 제3항에 있어서, 상기 제1 및 제2필터는 특정 파장만 통과시키는 밴드 패스 필터를 상용한 것을 특징으로 하는 반도체소자 제조용 노광장치.The exposure apparatus for manufacturing a semiconductor device according to claim 3, wherein the first and second filters employ a band pass filter for passing only a specific wavelength. 제4항에 있어서, 상기 밴드 패스 필터의 재질은 코팅과 쿨링을 겸한 소재인 것을 특징으로 하는 반도체소자 제조용 노광장치.The exposure apparatus of claim 4, wherein the band pass filter is formed of a material that combines coating and cooling. 제3항에 있어서, 상기 제1 및 제2필터의 크기는 상기 입력렌즈의 크기보다 1.0배 이상 되도록 형성한 것을 특징으로 하는 반도체소자 제조용 노광장치.The exposure apparatus of claim 3, wherein the first and second filters are formed to be 1.0 times or more larger than the size of the input lens. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950055691A 1995-12-23 1995-12-23 Exposure apparatus for fabrication of semiconductor device KR0160856B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950055691A KR0160856B1 (en) 1995-12-23 1995-12-23 Exposure apparatus for fabrication of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950055691A KR0160856B1 (en) 1995-12-23 1995-12-23 Exposure apparatus for fabrication of semiconductor device

Publications (2)

Publication Number Publication Date
KR970049053A true KR970049053A (en) 1997-07-29
KR0160856B1 KR0160856B1 (en) 1998-12-15

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KR1019950055691A KR0160856B1 (en) 1995-12-23 1995-12-23 Exposure apparatus for fabrication of semiconductor device

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Publication number Publication date
KR0160856B1 (en) 1998-12-15

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