KR970049003A - Bottom resist pattern formation method - Google Patents

Bottom resist pattern formation method Download PDF

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Publication number
KR970049003A
KR970049003A KR1019950057231A KR19950057231A KR970049003A KR 970049003 A KR970049003 A KR 970049003A KR 1019950057231 A KR1019950057231 A KR 1019950057231A KR 19950057231 A KR19950057231 A KR 19950057231A KR 970049003 A KR970049003 A KR 970049003A
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KR
South Korea
Prior art keywords
gas
layer
bottom resist
resist pattern
resist
Prior art date
Application number
KR1019950057231A
Other languages
Korean (ko)
Inventor
권상동
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950057231A priority Critical patent/KR970049003A/en
Publication of KR970049003A publication Critical patent/KR970049003A/en

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  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

보텀 레지스트 패턴 형성방법에 관하여 기재하고 있다. 탑(Top) 레지스트층, 층간절연층, 보텀(Bottom)레지스트층을 구비한 멀티 레이어 레지스트(Multi Layer Resist)를 이용한 반도체 소자 제조방법에 있어서, 상기 보텀 레지스트 패턴 형성을 위한 건식식각시, 메인 가스로서 O2가스를, 보호 및 활성화 가스로서 N2, Ar가스를 사용하고, 폴리머 발생가스를 첨가하여 식각하는 것을 특징으로 한다. 따라서, 층간저령층과의 선택비를 종래에 비해 크게 유지할 수 있으며, 형성되는 보텀 레지스트층 패턴의 프로파일을 제4도에 도시된 바와 같은 완전한 수직구조로 형성할 수 있다.The bottom resist pattern forming method is described. In the method of manufacturing a semiconductor device using a multi-layer resist having a top resist layer, an interlayer insulating layer, and a bottom resist layer, during the dry etching for forming the bottom resist pattern, the main gas As an O 2 gas, N 2 , Ar gas is used as a protective and activating gas, and a polymer generating gas is added for etching. Therefore, the selectivity with respect to the interlayer ordered layer can be maintained larger than in the prior art, and the profile of the bottom resist layer pattern formed can be formed in a perfect vertical structure as shown in FIG.

Description

보텀(bottom) 레지스트 패턴 형성방법Bottom resist pattern formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제4도는 본 발명의 일 실시예에 따른 보텀 레지스트 패턴 형성방법을 설명하기 위해 도시한 단면도들이다.4 is a cross-sectional view illustrating a method of forming a bottom resist pattern according to an embodiment of the present invention.

Claims (2)

탑(Top) 레지스트층, 층간절연층, 보텀(Bottom)레지스트층을 구비한 멀티 레이어 레지스트(Multi Layer Resist)를 이용한 반도체 소자 제조방법에 있어서, 상기 보텀 레지스트 패턴 형성을 위한 건식식각시, 메인 가스로서 O2가스를, 보호 및 활성화 가스로서 N2, Ar가스를 사용하고, 폴리머 발생가스를 첨가하여 식각하는 것을 특징으로 하는 보텀 레지스트 패턴 형성방법.In the method of manufacturing a semiconductor device using a multi-layer resist having a top resist layer, an interlayer insulating layer, and a bottom resist layer, during the dry etching for forming the bottom resist pattern, the main gas using N 2, Ar gas of O 2 gas, as a protective and active gas as and a bottom resist pattern forming method characterized in that the etching gas was added to the polymer occurs. 제1항에 있어서, 상기 폴리머 발생가스로 HBr을 사용하는 것을 특징으로 하는 보텀 레지스트 패턴 형성방법.The bottom resist pattern forming method according to claim 1, wherein HBr is used as the polymer generating gas. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950057231A 1995-12-26 1995-12-26 Bottom resist pattern formation method KR970049003A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950057231A KR970049003A (en) 1995-12-26 1995-12-26 Bottom resist pattern formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950057231A KR970049003A (en) 1995-12-26 1995-12-26 Bottom resist pattern formation method

Publications (1)

Publication Number Publication Date
KR970049003A true KR970049003A (en) 1997-07-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950057231A KR970049003A (en) 1995-12-26 1995-12-26 Bottom resist pattern formation method

Country Status (1)

Country Link
KR (1) KR970049003A (en)

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