KR970049003A - Bottom resist pattern formation method - Google Patents
Bottom resist pattern formation method Download PDFInfo
- Publication number
- KR970049003A KR970049003A KR1019950057231A KR19950057231A KR970049003A KR 970049003 A KR970049003 A KR 970049003A KR 1019950057231 A KR1019950057231 A KR 1019950057231A KR 19950057231 A KR19950057231 A KR 19950057231A KR 970049003 A KR970049003 A KR 970049003A
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- layer
- bottom resist
- resist pattern
- resist
- Prior art date
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- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
보텀 레지스트 패턴 형성방법에 관하여 기재하고 있다. 탑(Top) 레지스트층, 층간절연층, 보텀(Bottom)레지스트층을 구비한 멀티 레이어 레지스트(Multi Layer Resist)를 이용한 반도체 소자 제조방법에 있어서, 상기 보텀 레지스트 패턴 형성을 위한 건식식각시, 메인 가스로서 O2가스를, 보호 및 활성화 가스로서 N2, Ar가스를 사용하고, 폴리머 발생가스를 첨가하여 식각하는 것을 특징으로 한다. 따라서, 층간저령층과의 선택비를 종래에 비해 크게 유지할 수 있으며, 형성되는 보텀 레지스트층 패턴의 프로파일을 제4도에 도시된 바와 같은 완전한 수직구조로 형성할 수 있다.The bottom resist pattern forming method is described. In the method of manufacturing a semiconductor device using a multi-layer resist having a top resist layer, an interlayer insulating layer, and a bottom resist layer, during the dry etching for forming the bottom resist pattern, the main gas As an O 2 gas, N 2 , Ar gas is used as a protective and activating gas, and a polymer generating gas is added for etching. Therefore, the selectivity with respect to the interlayer ordered layer can be maintained larger than in the prior art, and the profile of the bottom resist layer pattern formed can be formed in a perfect vertical structure as shown in FIG.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제4도는 본 발명의 일 실시예에 따른 보텀 레지스트 패턴 형성방법을 설명하기 위해 도시한 단면도들이다.4 is a cross-sectional view illustrating a method of forming a bottom resist pattern according to an embodiment of the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950057231A KR970049003A (en) | 1995-12-26 | 1995-12-26 | Bottom resist pattern formation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950057231A KR970049003A (en) | 1995-12-26 | 1995-12-26 | Bottom resist pattern formation method |
Publications (1)
Publication Number | Publication Date |
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KR970049003A true KR970049003A (en) | 1997-07-29 |
Family
ID=66618326
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950057231A KR970049003A (en) | 1995-12-26 | 1995-12-26 | Bottom resist pattern formation method |
Country Status (1)
Country | Link |
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KR (1) | KR970049003A (en) |
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1995
- 1995-12-26 KR KR1019950057231A patent/KR970049003A/en not_active Application Discontinuation
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