KR970048982A - Phase reversal cell projection mask - Google Patents

Phase reversal cell projection mask Download PDF

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Publication number
KR970048982A
KR970048982A KR1019950052462A KR19950052462A KR970048982A KR 970048982 A KR970048982 A KR 970048982A KR 1019950052462 A KR1019950052462 A KR 1019950052462A KR 19950052462 A KR19950052462 A KR 19950052462A KR 970048982 A KR970048982 A KR 970048982A
Authority
KR
South Korea
Prior art keywords
silicon substrate
phase inversion
mask
cell projection
silicon
Prior art date
Application number
KR1019950052462A
Other languages
Korean (ko)
Inventor
김영식
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950052462A priority Critical patent/KR970048982A/en
Publication of KR970048982A publication Critical patent/KR970048982A/en

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Abstract

본 발명은 반도체 제조공정에 사용되는 셀 프로젝션 마스크(Cell Projection Mask)및 그 제조방법에 관한것으로, 리소그라피 고정중 전자빔을 이용하여 노광할때 해상력을 증대시키기 위해 셀 크로젝션 마스크와 위상반전 마스크를 결합시켜 마스크를 형성함으로 인하여 패턴의 해상력을 향상시킬수가 있고, 노광 시간 단축과 함께 전자빔 묘사장치를 이용한 고집적 제품개발이 보다 용이하다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cell projection mask used in a semiconductor manufacturing process and a method of manufacturing the same. The present invention relates to a combination of a cell projection mask and a phase inversion mask to increase resolution when exposed using an electron beam during lithography fixing. By forming a mask, the resolution of the pattern can be improved, and it is easier to develop a highly integrated product using an electron beam description device with shortening the exposure time.

Description

위상 반전 셀 프로젝션 마스크Phase reversal cell projection mask

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 의해 제조되는 위상 반전 셀 프로젝션 마스크를 이용하여 전자빔을 투과시킬때 광의 위상과 광의 강도를 도시한 도면.3 is a diagram showing the phase and intensity of light when transmitting an electron beam using a phase inversion cell projection mask made by the present invention.

Claims (3)

실리콘기판의 중앙부에 얇은 두께의 개구가 다수개 구비되고, 상기 실리콘기판의 가장자리의 일정부분은 남아있고, 다른부분은 후면식각되고, 상기 다수의 개구부의 중에서 중앙에 있는 개구부에 오버랩되는 위상반전층 패턴이 구비된 것을 특징으로 하는 위상 반전 셀 프로젝션 마스크.A plurality of thin-walled openings are provided in the center of the silicon substrate, and a portion of the edge of the silicon substrate remains, the other portion is etched back, and a phase inversion layer overlapping the opening in the center of the plurality of openings. Phase inversion cell projection mask characterized in that the pattern is provided. 제1항에 있어서, 상기 위상반전층 패턴의 두께는 0.1㎛~1㎛인 것을 특징으로 하는 위상 반전 셀 프로젝션 마스크.The phase inversion cell projection mask of claim 1, wherein the phase inversion layer pattern has a thickness of 0.1 μm to 1 μm. 셀 프로젝션 마스크 제조방법에 있어서 실리콘 기판 상부면에 레지스트 패턴을 형성하고, 상기 레지스트패턴을 마스크로 이용하여 노출된 실리콘기판을 일정깊이 식각하여 다수의 홈을 형성하는 단계와, 상기 레지스트 패턴을 제거한 다음 상기 다수의 홈 중에서 중앙에 있는 홈에 오버랩되는 위상반전층 패턴을 형성하는단계와, 상기 실리콘기판과 상기위상반전층 패턴의 전 표면에 실리콘 나이트 라이드막을 증착하는 단계와, 실리콘기판의 후면에 후면 식각용 레지스트 패턴을 형성하고 실리콘 기판의 후면에 노출된 실리콘 나이트라이드박을 식각하는 단계와, 상기 레지스트 패턴을 제거하고, 실리콘기판의 후면에 있는 실리콘 나이트라이드막을 마스크로 이용하여 실리콘기관의 후면에서 상기 실리콘 기관의 전면에 형성된 홈의 저부면까지 식각하는 단계와, 상기 실리콘기관의 표면에 남아있는 실리콘나이트라이드막을 제거하여 하는 단계를 포함하는 것을 특징으로 위상반전 셀 프로젝션 마스크 제조방법.In the method of manufacturing a cell projection mask, a resist pattern is formed on an upper surface of a silicon substrate, and a plurality of grooves are formed by etching an exposed silicon substrate using a resist pattern as a mask to a predetermined depth, and then removing the resist pattern. Forming a phase inversion layer pattern overlapping the groove in the center of the plurality of grooves, depositing a silicon nitride film on the entire surface of the silicon substrate and the phase inversion layer pattern, and a rear surface of the silicon substrate Forming an etching resist pattern and etching the silicon nitride foil exposed on the backside of the silicon substrate; removing the resist pattern; and using a silicon nitride film on the backside of the silicon substrate as a mask, Etch to the bottom of the groove formed in the front of the silicon organ And removing the silicon nitride film remaining on the surface of the silicon organ. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950052462A 1995-12-20 1995-12-20 Phase reversal cell projection mask KR970048982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950052462A KR970048982A (en) 1995-12-20 1995-12-20 Phase reversal cell projection mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950052462A KR970048982A (en) 1995-12-20 1995-12-20 Phase reversal cell projection mask

Publications (1)

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KR970048982A true KR970048982A (en) 1997-07-29

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KR1019950052462A KR970048982A (en) 1995-12-20 1995-12-20 Phase reversal cell projection mask

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100307220B1 (en) * 1998-06-30 2001-10-19 박종섭 Method of manufacturing mask of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100307220B1 (en) * 1998-06-30 2001-10-19 박종섭 Method of manufacturing mask of semiconductor device

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