KR970048943A - Phase reversal mask and its manufacturing method - Google Patents

Phase reversal mask and its manufacturing method Download PDF

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Publication number
KR970048943A
KR970048943A KR1019950048042A KR19950048042A KR970048943A KR 970048943 A KR970048943 A KR 970048943A KR 1019950048042 A KR1019950048042 A KR 1019950048042A KR 19950048042 A KR19950048042 A KR 19950048042A KR 970048943 A KR970048943 A KR 970048943A
Authority
KR
South Korea
Prior art keywords
pattern
phase inversion
layer
mask
chromium
Prior art date
Application number
KR1019950048042A
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Korean (ko)
Inventor
허익범
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950048042A priority Critical patent/KR970048943A/en
Publication of KR970048943A publication Critical patent/KR970048943A/en

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Abstract

본 발명은 반도체 제조 기술중 패턴을 형성하는 리소그래픽 공정에 사용되는 림형 위상반전 마스크에 관한 것으로, 투명기판 상부에 크롬패턴이 구비되고, 상기 크롬패턴의 측면에 공기층에 제거되도록 투명기판의 일정부분까지 위상반전막 패턴을 구비시켜 웨이퍼상의 패턴의 프로파일과 촛점 여유도를 향상 시킬 수 있는 기술이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a rim type phase reversal mask used in a lithographic process for forming a pattern in a semiconductor manufacturing technology. It is a technology that can improve the profile and focus margin of the pattern on the wafer by providing the phase inversion film pattern.

Description

위상 반전 마스크 및 그 제조 방법Phase reversal mask and its manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 제1도의 크롬패턴과 위상반전막 패턴을 확대하여 도시한 단면도,3 is an enlarged cross-sectional view of the chromium pattern and the phase inversion film pattern of FIG.

제4도는 본 발명에 의해 제조한 위상반전 마스크를 도시한 단면도.4 is a cross-sectional view showing a phase inversion mask manufactured by the present invention.

Claims (5)

림형 위상반전 마스크에 있어서, 투명기판 상부에 크롬패턴이 구비되고, 상기 크롬패턴의 상부면에서 크롬패턴의 측면에 공기층이 제거되도록 투명기판의 일정부분까지 위상반전막 패턴이 형성된 것을 특징으로 하는 위상반전 마스크.In the rim type phase inversion mask, a chromium pattern is provided on the transparent substrate, and the phase inversion film pattern is formed to a predetermined portion of the transparent substrate so that the air layer is removed from the upper surface of the chrome pattern on the side of the chromium pattern. Inverse mask. 제1항에 있어서, 상기 위상반전막 패턴은 에스 오지 지(SOG)로 형성된 것을 특징으로 하는 위상반전 마스크.The phase shift mask of claim 1, wherein the phase shift layer pattern is formed of SOG. 림형 위상반전 마스크를 제조하는 방법에 있어서, 투명기판 상부에 크롬층을 중착하는 단계와, 상기 크롬층 상부에 위상반전막을 형성하는 단계와, 상기 위상반전막의 일정부분을 식각하여 위상반전막 패턴을 형성하는 단계와, 상기 위상반전막 패턴을 마스크로 하여 크롬층을 습식식각하여 크롬층 패턴을 형성하는 단계와, 고온에서 상기 위상반전막 패턴을 가열하여 위상반전막 패턴의 가장 자리와 투명기판 사이에 공기층이 제거되도록 한 것을 특징으로 하는 위상반전 마스크 제조방법.A method of manufacturing a rim type phase inversion mask, comprising: depositing a chromium layer on an upper portion of a transparent substrate, forming a phase inversion layer on the chromium layer, and etching a predetermined portion of the phase inversion layer to form a phase inversion layer pattern Forming a chromium layer pattern by wet etching the chromium layer using the phase shift pattern as a mask, and heating the phase shift pattern at a high temperature to form an edge and a transparent substrate of the phase shift pattern. Phase inversion mask manufacturing method characterized in that the air layer is removed between. 제3항에 있어서, 상기 위상반전막은 에스 오 지막으로 형성하는 것을 특징으로 하는 위상반전 마스크 제조방법.4. The method of claim 3, wherein the phase inversion film is formed of an SOH film. 제3항에 있어서, 상기 고온은 100 - 1000℃의 온도인 것을 특징으The method of claim 3, wherein the high temperature is characterized in that the temperature of 100 ~ 1000 ℃ 로 하는 위상반전 마스크 제조방법.A phase inversion mask manufacturing method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950048042A 1995-12-08 1995-12-08 Phase reversal mask and its manufacturing method KR970048943A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950048042A KR970048943A (en) 1995-12-08 1995-12-08 Phase reversal mask and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950048042A KR970048943A (en) 1995-12-08 1995-12-08 Phase reversal mask and its manufacturing method

Publications (1)

Publication Number Publication Date
KR970048943A true KR970048943A (en) 1997-07-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950048042A KR970048943A (en) 1995-12-08 1995-12-08 Phase reversal mask and its manufacturing method

Country Status (1)

Country Link
KR (1) KR970048943A (en)

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