KR950021030A - Phase reversal mask and manufacturing method - Google Patents

Phase reversal mask and manufacturing method Download PDF

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Publication number
KR950021030A
KR950021030A KR1019930027761A KR930027761A KR950021030A KR 950021030 A KR950021030 A KR 950021030A KR 1019930027761 A KR1019930027761 A KR 1019930027761A KR 930027761 A KR930027761 A KR 930027761A KR 950021030 A KR950021030 A KR 950021030A
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KR
South Korea
Prior art keywords
pattern
boundary
mask
chromium
quartz substrate
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KR1019930027761A
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Korean (ko)
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KR970004479B1 (en
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함영목
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김주용
현대전자산업 주식회사
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Priority to KR1019930027761A priority Critical patent/KR970004479B1/en
Publication of KR950021030A publication Critical patent/KR950021030A/en
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Publication of KR970004479B1 publication Critical patent/KR970004479B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

본 발명은 위상반전마스크 및 그 제조방법에 관한 것으로, 석영기판의 상부에 제1 크롬패턴 및 감광막을 도포하고 하부에서 노광하여 제1 크롬패턴의 상부에 위상반전층패턴을 형성한 다음, 상기 감광막패턴을 마스크로하여 석영기판을 180도의 위상반전이 일어날 수 있는 두께로 식각하고 제1 크롬패턴을 습식식각하여 패턴의 경계부를 형성한 다음, 감광막패턴을 제거한 위상반전마스크로서, 상기 제2 크롬패턴의 크기가 맞지 않을 때에는 건식식각으로 크기를 맞추어 위상반전마스크를 형성하는 기술이다.The present invention relates to a phase inversion mask and a method of manufacturing the same, wherein a first chromium pattern and a photosensitive film are coated on a quartz substrate and exposed from the bottom to form a phase inversion layer pattern on a top of the first chromium pattern. Using a pattern as a mask, a quartz substrate is etched to a thickness capable of 180 ° phase reversal, and a first chromium pattern is wet etched to form a boundary of the pattern, and then the second chromium pattern is removed as a photoresist pattern. When the size of the does not match, it is a technique of forming a phase inversion mask by adjusting the size by dry etching.

Description

위상반전마스크 및 그 제조방법Phase reversal mask and manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도 내지 제5도는 본 발명에 의한 위상반전마스크 제조공정을 도시한 단면도.3 to 5 are cross-sectional views showing a phase inversion mask manufacturing process according to the present invention.

Claims (7)

석영기판의 상부의 예정된 위치에 각각 크롬패턴이 형성되고 상기 크롬패턴 사이에 일정부분을 예정된 두께로 식각하여 위상반전이 일어나도록 하는 홈을 형성하여 식각되지 않은 석영기판이 위상반전을 일으키는 것을 특징으로하는 위상반전마스크.Each of the chromium patterns is formed at a predetermined position on the upper portion of the quartz substrate, and a portion of the chromium pattern is etched to a predetermined thickness to form a groove for causing phase inversion so that the unetched quartz substrate causes phase inversion. Phase inversion mask. 제1항에 있어서, 상기 홈은 3,000-4,000Å 정도로 식각하는 것을 특징으로 하는 위상반전마스크.The phase shift mask of claim 1, wherein the grooves are etched at about 3,000 to 4,000 μs. 제1항에 있어서, 상기 크롬패턴과 인접하는 홈의 경계부를 말하는 패턴의 경계부는 0.5도로 하는 것을 특징으로 하는 위상반전마스크.The phase shift mask according to claim 1, wherein the boundary of the pattern, which refers to the boundary of the groove adjacent to the chrome pattern, is 0.5 degrees. 위상반전마스크의 제조방법에 있어서, 석영기판의 상부에 제1크롬패턴을 형성한 다음, 상부에 감광막을 도포하는 공정과, 상기 석영기판을 하부에서 제1크롬패턴을 마스크로하여 노광하고, 현상공정으로 상부에 감광막패턴을 형성하는 공정과, 상기 감광막패턴을 마스크로하여 석영기판을 식각하여 홈을 형성하는 공정과, 크롬식각액을 사용하여 제1크롬패턴의 끝부분을 식각하여 위상반전을 일으키는 패턴의 경계부를 형성함과 동시에 제2크롬패턴을 형성하는 공정과, 상기 감광막패턴을 제거한 다음, 기판의 표면을 세척하는 공정을 포함하는 위상반전마스크의 제조방법.In the method of manufacturing a phase inversion mask, a step of forming a first chrome pattern on an upper part of a quartz substrate, and then applying a photoresist film on the upper part, exposing the quartz substrate to a lower part using a first chromium pattern as a mask, and developing Forming a photoresist pattern on the upper surface; forming a groove by etching a quartz substrate using the photoresist pattern as a mask; A method of manufacturing a phase shift mask comprising forming a boundary portion of a pattern and simultaneously forming a second chromium pattern, and removing the photoresist pattern and then cleaning the surface of the substrate. 제4항에 있어서, 상기 3,000-4,000Å 정도로 식각하는 것을 특징으로하는 위상반전마스크 제조방법.The method of claim 4, wherein the etching process is characterized in that the etching of about 3,000-4,000 Å. 제4항에 있어서, 상기 크롬패턴과 인접한 홈과의 경계부를 말하는 패턴의 경계부는 0.5㎛정도로 하는 것을 특징으로 하는 위상반전마스크 제조방법.The method of manufacturing a phase shift mask according to claim 4, wherein the boundary of the pattern, which says the boundary between the chrome pattern and the adjacent groove, is about 0.5 탆. 제4항에 있어서, 상기 패턴의 경계부가 알맞게 식각되지 않은 제2크롬패턴은 건식식각하여 알맞은 패턴의 경계부 및 제2크롬패턴을 형성하는 것을 특징으로 하는 위상반전마스크 제조방법.The method of claim 4, wherein the second chromium pattern in which the boundary of the pattern is not properly etched is dry etched to form the boundary of the suitable pattern and the second chrome pattern. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930027761A 1993-12-15 1993-12-15 Phase shift mask and manufacturing method KR970004479B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930027761A KR970004479B1 (en) 1993-12-15 1993-12-15 Phase shift mask and manufacturing method

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Application Number Priority Date Filing Date Title
KR1019930027761A KR970004479B1 (en) 1993-12-15 1993-12-15 Phase shift mask and manufacturing method

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KR950021030A true KR950021030A (en) 1995-07-26
KR970004479B1 KR970004479B1 (en) 1997-03-28

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100399924B1 (en) * 1996-06-21 2003-12-24 주식회사 하이닉스반도체 Method for forming patterns of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100399924B1 (en) * 1996-06-21 2003-12-24 주식회사 하이닉스반도체 Method for forming patterns of semiconductor device

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KR970004479B1 (en) 1997-03-28

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