KR970031123A - High power laser diode - Google Patents

Abstract

The present invention relates to a high power laser diode, comprising: a first conductive semiconductor substrate having upper and lower surfaces, a first cladding layer of a first conductive type formed on an upper surface of the semiconductor substrate, and a first cladding layer; A first optical waveguide layer formed without impurities at an upper portion thereof, and an active layer formed of a quantum well structure with a material having a larger optical refractive index than the first optical waveguide layer having no impurities doped at an upper portion of the first optical waveguide layer; A second cladding layer formed of the same material as the first optical waveguide layer having a smaller optical refractive index than the active layer without impurities doped on the active layer, and having a predetermined width on the second optical waveguide layer in a length direction; A sub-ridge having an elongation and having a smaller optical refractive index than the second optical waveguide, and having a width narrower than that of the sub-ridge on the upper portion of the sub-ridge. A second cladding layer having a second conductivity type, an ohmic contact layer of a second conductivity type doped with a high concentration of impurities formed on the second cladding layer, and an ohmic contact between the lower surface of the semiconductor substrate and the ridge. And first and second conductivity type electrodes formed in the layer. Therefore, the light output density in the resonator may be lowered during the high output operation to prevent a change in the radiation pattern caused by the generation of the higher order mode, thereby improving the light quantity and the stability of the light output from the laser diode module.

Description

High power laser diode

Since this is an open matter, no full text was included.

2 is a perspective view of a high power laser diode according to the present invention;

Claims (5)

A first conductive semiconductor substrate having an upper and a lower surface, a first cladding layer of a first conductivity type formed on an upper surface of the semiconductor substrate, and a first non-doped impurity formed on the first cladding layer An optical waveguide layer, an active layer having a larger optical refractive index than the first optical waveguide layer, in which impurities are not doped on the first optical waveguide layer, is formed in a quantum well structure, and impurities are not doped in the upper portion of the active layer. A second cladding layer formed of the same material as the first optical waveguide layer having a smaller optical refractive index than that of the active layer, and having a predetermined width on the second optical waveguide layer and extending in a length direction, and having a second optical waveguide. A smaller sub ridge, a second cladding layer of a second conductivity type formed on the upper portion of the sub ridge and having a narrower width than the sub ridge and extending in a longitudinal direction, and the second A high power laser including a second conductive ohmic contact layer doped with a high concentration of impurities formed on the clad layer, and first and second conductive electrodes formed on the lower surface of the semiconductor substrate and the ohmic contact layer of the ridge. diode. The high power laser diode of claim 1, further comprising a groove having a same width and extending in a length direction to correspond to the sub ridge on the semiconductor substrate. The high power laser diode of claim 2, wherein the groove has the same width as the sub ridge. The high power laser diode of claim 1, wherein the sub ridge has a thickness thinner than that of the second optical waveguide layer. 5. The high power laser diode of claim 4, wherein the sub ridge has a refractive index equal to or less than a second cladding layer. ※ Note: The disclosure is based on the initial application.