KR970029869A - Semiconductor memory device - Google Patents

Semiconductor memory device Download PDF

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Publication number
KR970029869A
KR970029869A KR1019950040704A KR19950040704A KR970029869A KR 970029869 A KR970029869 A KR 970029869A KR 1019950040704 A KR1019950040704 A KR 1019950040704A KR 19950040704 A KR19950040704 A KR 19950040704A KR 970029869 A KR970029869 A KR 970029869A
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KR
South Korea
Prior art keywords
semiconductor memory
memory device
voltage generator
voltage
memory cell
Prior art date
Application number
KR1019950040704A
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Korean (ko)
Inventor
임흥수
임영호
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950040704A priority Critical patent/KR970029869A/en
Publication of KR970029869A publication Critical patent/KR970029869A/en

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Abstract

본 발명은 반도체 메모리 장치에 관해 게시한다. 본 발명의 구성은 비트라인에 전압을 인가하는 전압발생기를 갖는 반도체 메모리 셀에 있어서, 상기 전압발생기에 드레인이 접속된 더미트랜지스터의 상기 더미트랜지스터의 소오스에 접속된 전류소오스와 상기 전압발생기 사이에 연결된 검압기(voltage detector)로 되어있다. 상기 본 발명에 의하여 메모리 셀에 데이터 저장시 메모리 셀의 특성을 향상시킬 수 있다.The present invention relates to a semiconductor memory device. According to an aspect of the present invention, a semiconductor memory cell having a voltage generator for applying a voltage to a bit line includes a current source connected to a source of the dummy transistor of a dummy transistor having a drain connected to the voltage generator and a voltage generator. It is a voltage detector. According to the present invention, the characteristics of a memory cell can be improved when data is stored in the memory cell.

Description

반도체 메모리 장치Semiconductor memory device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 의한 반도체 메모리 장치의 메모리 셀 배치도.2 is a layout view of a memory cell of a semiconductor memory device according to the present invention.

Claims (2)

비트라인에 전압을 인가하는 전압발생기를 갖는 반도체 메모리 장치의 메모리셀에 있어서, 상기 전압발생기에 드레인이 접속된 더미트랜지스터; 상기 더미트랜지스터의 소오스에 접속된 전류소오스; 상기 전류소오스와 상기 전압발생기 사이에 연결된 검압기(voltage detector)를 구비하는 것을 특징으로 하는 반도체 메모리 장치.A memory cell of a semiconductor memory device having a voltage generator for applying a voltage to a bit line, comprising: a dummy transistor having a drain connected to the voltage generator; A current source connected to the source of the dummy transistor; And a voltage detector coupled between the current source and the voltage generator. 제1항에 있어서, 상기 더미트랜지스터는 다른 메모리 셀 트랜지스터와 동일한 구조와 크기를 갖는 것을 특징으로 하는 반도체 메모리 장치.The semiconductor memory device of claim 1, wherein the dummy transistor has the same structure and size as another memory cell transistor.
KR1019950040704A 1995-11-10 1995-11-10 Semiconductor memory device KR970029869A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950040704A KR970029869A (en) 1995-11-10 1995-11-10 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950040704A KR970029869A (en) 1995-11-10 1995-11-10 Semiconductor memory device

Publications (1)

Publication Number Publication Date
KR970029869A true KR970029869A (en) 1997-06-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950040704A KR970029869A (en) 1995-11-10 1995-11-10 Semiconductor memory device

Country Status (1)

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KR (1) KR970029869A (en)

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