KR970028841A - Base resin for chemically amplified resist and its manufacturing method - Google Patents

Base resin for chemically amplified resist and its manufacturing method Download PDF

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Publication number
KR970028841A
KR970028841A KR1019950040748A KR19950040748A KR970028841A KR 970028841 A KR970028841 A KR 970028841A KR 1019950040748 A KR1019950040748 A KR 1019950040748A KR 19950040748 A KR19950040748 A KR 19950040748A KR 970028841 A KR970028841 A KR 970028841A
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KR
South Korea
Prior art keywords
base resin
chemically amplified
amplified resist
represented
manufacturing
Prior art date
Application number
KR1019950040748A
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Korean (ko)
Inventor
최상준
고영범
Original Assignee
김광호
삼성전자 주식회사
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950040748A priority Critical patent/KR970028841A/en
Publication of KR970028841A publication Critical patent/KR970028841A/en

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Abstract

본 발명은 화학 증폭형 레지스트용 베이스 수지 및 그 제조 방법에 관한 것으로서, 아래에 나타나 있는 바와 같이 본 발명의 방법에 케탈기가 측쇄기에 치환되어 있는 공중합체는 에칭 내성이 뛰어날 뿐만 아니라, 193nm에서 투명하다. 따라서, 반도체 칩의 고집적화에 따라 새롭게 이용하는 ArF 엑시머 레이저의 파장(193nm)을 이용하는 리소그래피 공정에서 본 발명의 공중합체를 사용할 수 있다.The present invention relates to a base resin for chemically amplified resists and a method for manufacturing the same. As shown below, a copolymer in which a ketal group is substituted with a side chain group in the method of the present invention is not only excellent in etching resistance but also transparent at 193 nm. Do. Therefore, the copolymer of the present invention can be used in the lithography process using the wavelength (193 nm) of the ArF excimer laser newly used according to the high integration of the semiconductor chip.

Description

화학 증폭형 레지스트용 베이스 수지 및 그 제조 방법Base resin for chemically amplified resist and its manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

Claims (4)

하기식(I)로 표시되는 화학 증폭형 레지스트용 베이스 수지.Base resin for chemically amplified resists represented by the following formula (I). 여기에서, n은 2 내지 6이고, x:y는 1:1 내지 2:1임.Wherein n is 2 to 6 and x: y is 1: 1 to 2: 1. 3,5-사이클로헥사디엔-1,2-디올을 그 농도가 10 내지 20중량%가 되도록 용매에 용해시키는 단계; 상기 단계에서 얻어진 용액에, 촉매량의 알루미나와 톨루엔설폰산을 넣고 교반한 다음, 상기 3,5-사이클로헥사디엔-1,2-디올과 동일 몰의 지방족고리케톤 화합물을 서서히 투여하는 단계; 상기 얻어진 혼합물을 30 내지 40℃에서 반응시킨 다음, 하기식(II)로 표시되는 반응 생성물을 분리하는 단계; 및Dissolving 3,5-cyclohexadiene-1,2-diol in a solvent such that its concentration is 10 to 20% by weight; Adding a catalytic amount of alumina and toluenesulfonic acid to the solution obtained in the above step and stirring the mixture, and then slowly administering the same molar aliphatic cyclic ketone compound as the 3,5-cyclohexadiene-1,2-diol; Reacting the obtained mixture at 30 to 40 ° C., and then separating the reaction product represented by the following formula (II); And 상기 식(II)로 표시되는 모노머와 3,5-사이클로헥사디엔-1,2-디올을 1:1 내지 2:1의 몰비로 1,4-디옥산에 용해시킨 다음, 중합개시제를 투여하여 반응시키는 단계를 포함하는, 하기식(I)로 표시되는 화학 증폭형 레지스트용 베이스 수지의 제조 방법.The monomer represented by formula (II) and 3,5-cyclohexadiene-1,2-diol are dissolved in 1,4-dioxane in a molar ratio of 1: 1 to 2: 1, and then a polymerization initiator is administered to The manufacturing method of the base resin for chemically amplified resist represented by following formula (I) containing the step of making it react. 여기에서, n은 2 내지 6이고, x:y는 1:1 내지 2:1임.Wherein n is 2 to 6 and x: y is 1: 1 to 2: 1. 제2항에 있어서, 상기 용매는 디클로로메탄, 디에틸에테르 및 테트라하이드로퓨란으로 이루어진 군에서 선택된 하나인 것을 특징으로 하는 화학 증폭형 레지스트용 베이스 수지의 제조 방법.The method of claim 2, wherein the solvent is one selected from the group consisting of dichloromethane, diethyl ether and tetrahydrofuran. 제2항에 있어서, 상기 중합개시제는 아조비스이소쿠티로니트릴인 것을 특징으로 하는 화학 증폭형 레지스트용 베이스 수지의 제조 방법.The method for producing a base resin for chemically amplified resist according to claim 2, wherein the polymerization initiator is azobisisocutyronitrile. ※ 참고사항:최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950040748A 1995-11-10 1995-11-10 Base resin for chemically amplified resist and its manufacturing method KR970028841A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950040748A KR970028841A (en) 1995-11-10 1995-11-10 Base resin for chemically amplified resist and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950040748A KR970028841A (en) 1995-11-10 1995-11-10 Base resin for chemically amplified resist and its manufacturing method

Publications (1)

Publication Number Publication Date
KR970028841A true KR970028841A (en) 1997-06-24

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KR1019950040748A KR970028841A (en) 1995-11-10 1995-11-10 Base resin for chemically amplified resist and its manufacturing method

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KR (1) KR970028841A (en)

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