KR100261225B1 - Alicyclic cyclopolymers and chemically amplified resists comprising the same - Google Patents
Alicyclic cyclopolymers and chemically amplified resists comprising the same Download PDFInfo
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- KR100261225B1 KR100261225B1 KR1019980016298A KR19980016298A KR100261225B1 KR 100261225 B1 KR100261225 B1 KR 100261225B1 KR 1019980016298 A KR1019980016298 A KR 1019980016298A KR 19980016298 A KR19980016298 A KR 19980016298A KR 100261225 B1 KR100261225 B1 KR 100261225B1
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
- C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
Abstract
Description
본 발명은 화학증폭형 레지스트 조성물에 관한 것으로, 특히 폴리머 백본(back bone)이 환식(環式) 구조를 가지면서 지환식(脂環式) 기를 함유하고 있는 지환식 시클로폴리머 및 이를 포함하는 레지스트 조성물에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemically amplified resist composition, and in particular, an alicyclic cyclopolymer containing an alicyclic group while the polymer backbone has a cyclic structure and a resist composition comprising the same. It is about.
반도체 소자의 집적도가 증가함에 따라 포토리소그래피 공정에 있어서 미세 패턴 형성이 필수적인 과제로 되고 있다. 더욱이, 소자의 용량이 1기가(giga) 비트급 이상으로 감에 따라 패턴의 사이즈가 0.2μm 이하의 디자인 룰이 요구되고, 그에 따라 기존의 DUV(Deep Ultraviolet)(248nm) 노광원인 KrF 엑시머 레이저보다 단파장인 ArF 엑시머 레이저(193nm)을 이용하는 포토리소그래피 기술이 도입되면서 새로운 레지스트 조성물이 등장하게 되었다.As the degree of integration of semiconductor devices increases, the formation of fine patterns has become an essential task in the photolithography process. Furthermore, as the device's capacity goes above 1 gigabit, design patterns with a pattern size of 0.2 μm or less are required, resulting in shorter wavelengths than KrF excimer lasers, which are DUV (Deep Ultraviolet) (248 nm) exposure sources. With the introduction of photolithography technology using an ArF excimer laser (193 nm), new resist compositions have emerged.
일반적으로, ArF 엑시머 레이저용 화학증폭형 레지스트 조성물은 기본적으로 다음과 같은 요건을 만족해야 한다. 즉, 먼저 193nm의 파장 영역에서 투명도가 우수하여야 하며, 막질에 대한 접착력이 우수하여야 한다. 또한, 건식 식각에 대한 내성이 우수하며, 현상시에는 통상적으로 사용되는 현상액을 그대로 사용할 수 있어야 한다.In general, chemically amplified resist compositions for ArF excimer lasers must basically meet the following requirements. That is, first, the transparency should be excellent in the wavelength range of 193nm, and the adhesion to the film should be excellent. In addition, it is excellent in resistance to dry etching, and when developing, it should be possible to use a developer commonly used as it is.
현재까지 알려진 가장 일반적인 ArF 엑시머 레이저용 화학증폭형 레지스트로서 아크릴레이트 또는 메타크릴레이트계 폴리머들이 주로 사용되어 왔다. 특히, 대표적인 터폴리머로서 폴리(MMA-tBMA-MAA)가 있다. 그러나, 이러한 폴리머들은 건식 식각에 대한 내성이 매우 약하고, 접착력이 약하다는 문제가 있다.Acrylate or methacrylate-based polymers have been mainly used as chemically amplified resists for the most common ArF excimer lasers known to date. In particular, a representative terpolymer is poly (MMA-tBMA-MAA). However, these polymers have a problem in that the resistance to dry etching is very weak and the adhesion is weak.
본 발명의 목적은 ArF 엑시머 레이저 파장으로 노광할 때, 막질에 대하여 우수한 접착력을 제공하고, 건식 식각에 대한 강한 내성을 제공할 수 있는 레지스트를 제조하는 데 유용하게 사용될 수 있는 폴리머를 제공하는 것이다.It is an object of the present invention to provide a polymer that can be usefully used to prepare resists that can provide good adhesion to the film quality when exposed to ArF excimer laser wavelengths and can provide strong resistance to dry etching.
본 발명의 다른 목적은 상기한 폴리머를 포함하는 레지스트 조성물을 제공하는 것이다.Another object of the present invention is to provide a resist composition comprising the above polymer.
상기 목적을 달성하기 위하여, 본 발명은 화학 증폭형 레지스트에 사용되는 다음 식을 가지는 폴리머를 제공한다.In order to achieve the above object, the present invention provides a polymer having the following formula used in a chemically amplified resist.
식중 m/(m+n) = 0.1 ∼ 0.9이다.M / (m + n) = 0.1-0.9 in a formula.
상기 폴리머는 3,000 ∼ 100,000의 중량 평균 분자량을 갖는다.The polymer has a weight average molecular weight of 3,000 to 100,000.
상기 다른 목적을 달성하기 위하여, 본 발명은In order to achieve the above another object, the present invention
(a) 화학 증폭형 레지스트에 사용되는 다음 식을 가지는 폴리머와,(a) a polymer having the following formula for use in chemically amplified resists,
(식중 m/(m+n) = 0.1 ∼ 0.9임)Where m / (m + n) = 0.1 to 0.9
(b) PAG(photoacid generator)로 구성되는 레지스트 조성물을 제공한다.(b) provides a resist composition composed of a photoacid generator (PAG).
상기 레지스트 조성물은 상기 폴리머의 중량을 기준으로 1 ∼ 15%의 PAG를 포함한다.The resist composition comprises 1-15% PAG based on the weight of the polymer.
상기 PAG는 트리아릴술포늄염(triarylsulfonium salts), 디아릴이오도늄염(diaryliodonium salts), 술포네이트(sulfonates) 및 그 혼합물로 이루어지는 군에서 선택된다.The PAG is selected from the group consisting of triarylsulfonium salts, diaryliodonium salts, sulfonates and mixtures thereof.
본 발명에 따른 레지스트 조성물은 또한 유기 염기를 더 포함한다. 상기 유기 염기는 트리에틸 아민, 디에틸 아민, 트리에탄올 아민 및 그 혼합물에서 선택된다.The resist composition according to the invention further comprises an organic base. The organic base is selected from triethyl amine, diethyl amine, triethanol amine and mixtures thereof.
본 발명에 따른 레지스트 조성물은 또한 용해 억제제를 더 포함한다. 상기 용해 억제제는 사르사사포제닌(sarsasapogenin)이다.The resist composition according to the invention further comprises a dissolution inhibitor. The dissolution inhibitor is sarsasapogenin.
본 발명에 의한 레지스트 조성물은 리소그래피 공정에 적용할 때 막질에 대하여 우수한 접착력을 제공하고, 건식 식각에 대한 강한 내성을 제공할 수 있어서 우수한 패터닝 효과를 얻을 수 있다.The resist composition according to the present invention can provide excellent adhesion to the film quality when applied to the lithography process, can provide a strong resistance to dry etching, thereby obtaining an excellent patterning effect.
다음에, 본 발명의 바람직한 실시예에 대하여 첨부 도면을 참조하여 상세히 설명한다.Next, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.
실시예 1Example 1
코폴리머의 합성Synthesis of Copolymer
본 실시예에 따른 코폴리머의 합성 반응은 다음 식으로 표시될 수 있다.Synthesis reaction of the copolymer according to the present embodiment can be represented by the following formula.
무수 5-노르보넨-2,3-디카르복실산(50mmol)과 정제된 무수 말레인산(50mmol)을 아조비스이소부티로니트릴(2mmol)과 함께 무수 THF(tetrahydrofuran) 용액에 녹인 다음, 질소 가스를 이용하여 약 2시간 동안 퍼지하고, 반응물을 환류 상태에서 약 24시간 동안 반응시켰다.Dissolve 5-norbornene-2,3-dicarboxylic acid anhydride (50 mmol) and purified maleic anhydride (50 mmol) together with azobisisobutyronitrile (2 mmol) in anhydrous THF (tetrahydrofuran) solution, and then nitrogen gas. Purge for about 2 hours, and react the reaction at reflux for about 24 hours.
반응이 끝난 후, 반응물을 과량의 n-헥산에서 천천히 침전시킨 후, 침전물을 다시 THF 용액에 녹이고, n-헥산에서 재침전을 시켰다.After the reaction was completed, the reaction was slowly precipitated in excess of n-hexane, and then the precipitate was dissolved in THF solution and reprecipitated in n-hexane.
침전물을 약 50℃로 유지되는 진공 오븐에서 약 24시간 동안 건조시켜서 코폴리머를 얻었다(수율 50%).The precipitate was dried in a vacuum oven maintained at about 50 ° C. for about 24 hours to obtain a copolymer (yield 50%).
이 때, 얻어진 생성물의 중량 평균 분자량은 6,750이고, 다분산도(polydispersity)는 2.1이었다.At this time, the weight average molecular weight of the obtained product was 6,750, and polydispersity was 2.1.
실시예 2Example 2
코폴리머의 개질(改質)Modification of Copolymer
실시예 1에서 합성한 코폴리머(10g)를 t-부탄올(120ml)에 용해시킨 후, 여기에 HCl을 소량 첨가하고, 이 혼합물을 80℃의 온도에서 약 12시간 동안 반응시켰다.After dissolving the copolymer (10 g) synthesized in Example 1 in t-butanol (120 ml), a small amount of HCl was added thereto, and the mixture was reacted at a temperature of 80 ° C. for about 12 hours.
반응이 끝난 후, 반응 생성물을 과량의 물에 천천히 떨어뜨리면서 침전시켰다. 그 후, 침전물을 글라스 필터를 이용하여 여과하고, 다시 THF 용액에 용해시킨 후 n-헥산에서 재침전시켰다.After the reaction was completed, the reaction product was precipitated while slowly dropping into excess water. The precipitate was then filtered using a glass filter, dissolved again in THF solution and reprecipitated in n-hexane.
침전물을 약 50℃로 유지되는 진공 오븐에서 약 24시간 동안 건조시켰다.The precipitate was dried for about 24 hours in a vacuum oven maintained at about 50 ° C.
실시예 3Example 3
실시예 2에서 합성한 코폴리머(1g)를 PAG(photoacid generator)인 트리페닐술포늄 트리플레이트(0.02g)와 함께 프로필렌글리콜 모노메틸 에테르 아세테이트(PGMEA)(6g)에 완전히 용해시켜서 레지스트 조성물을 형성하였다.The copolymer (1 g) synthesized in Example 2 was completely dissolved in propylene glycol monomethyl ether acetate (PGMEA) (6 g) together with triphenylsulfonium triflate (0.02 g), a photoacid generator (PAG), to form a resist composition. It was.
그 후, 상기 레지스트 조성물을 0.2μm 마이크로필터를 이용하여 여과한 후, 헥사메틸 디실라잔(HMDS)으로 처리한 실리콘 웨이퍼상에 약 0.5μm의 두께로 코팅하였다.The resist composition was then filtered using a 0.2 μm microfilter and then coated to a thickness of about 0.5 μm on a silicon wafer treated with hexamethyl disilazane (HMDS).
레지스트 조성물이 코팅된 상기 웨이퍼를 약 130℃의 온도에서 약 90초동안 프리베이킹(pre-baking)하고, 개구수(NA)가 0.45인 KrF 엑시머 레이저를 이용하는 스테퍼(stepper)를 사용하여 노광한 후, 약 140℃의 온도에서 약 90초동안 PEB(post-exposure baking)를 실시하였다.The wafer coated with the resist composition was pre-baked at a temperature of about 130 ° C. for about 90 seconds and exposed using a stepper using a KrF excimer laser having a numerical aperture (NA) of 0.45. Post-exposure baking (PEB) was performed at a temperature of about 140 ° C. for about 90 seconds.
그 후, 2.38 중량% 테트라메틸암모늄 히드록사이드(tetramethylammonium hydroxide: TMAH) 용액을 이용하여 현상하였다. 그 결과, 노광 도즈량을 약 24mJ/cm2으로 하였을 때 선명한 0.3μm 라인 앤드 스페이스 패턴이 얻어지는 것을 확인하였다.It was then developed using a 2.38 wt% tetramethylammonium hydroxide (TMAH) solution. As a result, when the exposure dose amount was set to about 24 mJ / cm 2 , it was confirmed that a clear 0.3 μm line and space pattern was obtained.
실시예 4Example 4
실시예 2에서 합성한 코폴리머(1g)를 PAG인 트리페닐술포늄 트리플레이트(0.02g)와, 유기 염기인 트리이소부틸 아민(2mg)과 함께 PGMEA(6g)에 완전히 용해시켜서 레지스트 조성물을 형성하였다.The copolymer (1 g) synthesized in Example 2 was completely dissolved in PGMEA (6 g) together with triphenylsulfonium triflate (0.02 g), PAG, and triisobutyl amine (2 mg), an organic base, to form a resist composition. It was.
그 후, 상기 레지스트 조성물을 0.2μm 마이크로필터를 이용하여 여과한 후, HMDS로 처리한 실리콘 웨이퍼상에 약 0.5μm의 두께로 코팅하였다.The resist composition was then filtered using a 0.2 μm microfilter and then coated on a silicon wafer treated with HMDS to a thickness of about 0.5 μm.
레지스트 조성물이 코팅된 상기 웨이퍼를 약 130℃의 온도에서 약 90초동안 프리베이킹하고, 개구수(NA)가 0.45인 KrF 엑시머 레이저를 이용하는 스테퍼를 사용하여 노광한 후, 약 140℃의 온도에서 약 90초동안 PEB를 실시하였다.The wafer coated with the resist composition was prebaked at a temperature of about 130 ° C. for about 90 seconds, exposed using a stepper using a KrF excimer laser having a numerical aperture (NA) of 0.45, and then at about 140 ° C. PEB was run for 90 seconds.
그 후, 2.38 중량%의 TMAH 용액을 이용하여 현상하였다. 그 결과, 노광 도즈량을 약 34mJ/cm2으로 하였을 때 선명한 0.3μm 라인 앤드 스페이스 패턴이 얻어지는 것을 확인하였다.Thereafter, development was carried out using a 2.38 wt% TMAH solution. As a result, when the exposure dose amount was set to about 34 mJ / cm 2 , it was confirmed that a clear 0.3 μm line and space pattern was obtained.
실시예 5Example 5
실시예 2에서 합성한 코폴리머(1g)를 용해 억제제인 사르사사포제닌(sarsasapogenin)(0.1g)과, PAG인 트리페닐술포늄 트리플레이트(0.02g)와 함께 PGMEA(6g)에 용해시킨 후, 여기에 유기 염기인 트리이소부틸 아민(2mg)을 가하여 완전히 용해시켜서 레지스트 조성물을 형성하였다.The copolymer (1 g) synthesized in Example 2 was dissolved in PGMEA (6 g) together with sarsasapogenin (0.1 g), a dissolution inhibitor, and triphenylsulfonium triflate (0.02 g), PAG. To this, triisobutyl amine (2 mg), which is an organic base, was added and completely dissolved to form a resist composition.
그 후, 상기 레지스트 조성물을 0.2μm 마이크로필터를 이용하여 여과한 후, HMDS로 처리한 실리콘 웨이퍼상에 약 0.5μm의 두께로 코팅하였다.The resist composition was then filtered using a 0.2 μm microfilter and then coated on a silicon wafer treated with HMDS to a thickness of about 0.5 μm.
레지스트 조성물이 코팅된 상기 웨이퍼를 약 130℃의 온도에서 약 90초동안 프리베이킹하고, 개구수(NA)가 0.45인 KrF 엑시머 레이저를 이용하는 스테퍼를 사용하여 노광한 후, 약 140℃의 온도에서 약 90초동안 PEB를 실시하였다.The wafer coated with the resist composition was prebaked at a temperature of about 130 ° C. for about 90 seconds, exposed using a stepper using a KrF excimer laser having a numerical aperture (NA) of 0.45, and then at about 140 ° C. PEB was run for 90 seconds.
그 후, 2.38 중량%의 TMAH 용액을 이용하여 약 60초 동안 현상하였다. 그 결과, 노광 도즈량을 약 26mJ/cm2으로 하였을 때 선명한 0.3μm 라인 앤드 스페이스 패턴이 얻어지는 것을 확인하였다.It was then developed for about 60 seconds using 2.38 wt% TMAH solution. As a result, when the exposure dose amount was set to about 26 mJ / cm 2 , it was confirmed that a clear 0.3 μm line and space pattern was obtained.
본 발명에 따른 폴리머는 노르보르넨(norbonene) 유도체와 무수 말레인산의 교호(交互) 공중합체들을 바탕으로 하고 있다. 본 발명에 따른 폴리머는 백본이 환식 구조를 가지면서 지환식 기를 함유하고 있으므로, 건식 식각에 대한 내성을 확보할 수 있다.The polymer according to the invention is based on alternating copolymers of norbornene derivatives and maleic anhydride. Since the polymer according to the present invention has an alicyclic group while the backbone has a cyclic structure, resistance to dry etching can be ensured.
또한, 본 발명에 따른 폴리머를 이용한 레지스트 조성물은 리소그래피 공정에 적용할 때 막질에 대하여 우수한 접착력을 제공하고, 건식 식각에 대한 강한 내성을 제공할 수 있어서 우수한 패터닝 효과를 얻을 수 있다. 따라서, 차세대 반도체 소자를 제조하는 데 매우 유용하게 사용될 수 있다.In addition, the resist composition using the polymer according to the present invention can provide excellent adhesion to the film quality when applied to the lithography process, and can provide a strong resistance to dry etching, thereby obtaining an excellent patterning effect. Therefore, it can be very useful for manufacturing next generation semiconductor devices.
이상, 본 발명을 바람직한 실시예를 들어 상세하게 설명하였으나, 본 발명은 상기 실시예에 한정되지 않고, 본 발명의 기술적 사상의 범위 내에서 당 분야에서 통상의 지식을 가진 자에 의하여 여러가지 변형이 가능하다.The present invention has been described in detail with reference to preferred embodiments, but the present invention is not limited to the above embodiments, and various modifications can be made by those skilled in the art within the scope of the technical idea of the present invention. Do.
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| KR100362936B1 (en) * | 1998-08-27 | 2003-09-26 | 주식회사 하이닉스반도체 | Polymers of Novel Photoresist and Photoresist Compositions Using the Same |
| KR100362935B1 (en) * | 1998-08-28 | 2003-10-04 | 주식회사 하이닉스반도체 | Novel Photoresist Polymers and Photoresist Compositions Using Them |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100362936B1 (en) * | 1998-08-27 | 2003-09-26 | 주식회사 하이닉스반도체 | Polymers of Novel Photoresist and Photoresist Compositions Using the Same |
| KR100362935B1 (en) * | 1998-08-28 | 2003-10-04 | 주식회사 하이닉스반도체 | Novel Photoresist Polymers and Photoresist Compositions Using Them |
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