KR970028812A - Reticle for Photo Processing - Google Patents

Reticle for Photo Processing Download PDF

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Publication number
KR970028812A
KR970028812A KR1019950043921A KR19950043921A KR970028812A KR 970028812 A KR970028812 A KR 970028812A KR 1019950043921 A KR1019950043921 A KR 1019950043921A KR 19950043921 A KR19950043921 A KR 19950043921A KR 970028812 A KR970028812 A KR 970028812A
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KR
South Korea
Prior art keywords
reticle
key
pattern
photolithography
line
Prior art date
Application number
KR1019950043921A
Other languages
Korean (ko)
Other versions
KR0161594B1 (en
Inventor
김정열
장동희
정성길
길성진
Original Assignee
김광호
삼성전자 주식회사
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Priority to KR1019950043921A priority Critical patent/KR0161594B1/en
Publication of KR970028812A publication Critical patent/KR970028812A/en
Application granted granted Critical
Publication of KR0161594B1 publication Critical patent/KR0161594B1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

본 발명은 반도체소자 제조공정중에서 사진공정시 웨이퍼에 패턴을 형성하는데 사용하는 레티클에 관한 것으로, 특히 정렬정도를 향상시킬 수 있는 사진공정용 레티클과 이 레티클의 정렬방법에 대한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reticle used to form a pattern on a wafer during a photolithography process in a semiconductor device manufacturing process, and more particularly to a reticle for photolithography and an alignment method of the reticle for improving alignment.

종래의 레티클은 스크리브 라인내 양 에지에 형성된 키만으로 각 스텝별로 서로 정렬하게 되어 장시간 사용하게 되면 렌즈 왜곡이 서로 달라서 패턴 미스의 체크시 데이터 오류의 발생을 방지할 수 없게 되는 문제점이 있었다.The conventional reticle is aligned with each step only by keys formed at both edges of the screed line, and thus, when used for a long time, lens distortion is different, and thus there is a problem in that data errors cannot be prevented when a pattern miss is checked.

본 발명은 상술한 문제점을 극복하기 위한 것으로, 레티클의 중심부위와 스크리브 라인내 상하부에 각각 소정크기의 키를 형성하고, 스크리브라인이 없는 가장 스크리브 라인에 상기 키와 대칭되게 키를 형성하여, 단계별 1피치의 이동시 상기 레티클에 의한 노광부위를 다음 스텝에서 일부 중복시켜 레티클을 정렬하므로서 렌즈의 왜곡현상을 적절히 조정하여 정렬하므로서 패턴을 형성하도록 하였다.SUMMARY OF THE INVENTION The present invention is to overcome the above-mentioned problems, and a key having a predetermined size is formed on the center of the reticle and the upper and lower portions of the screb line, and the keys are formed symmetrically with the key on the most screed line without screbriin. Thus, the pattern is formed by properly adjusting and aligning the distortion phenomenon of the lens by aligning the reticles by partially overlapping the exposure area by the reticle in the next step when the step 1 pitch is moved.

Description

사진공정용 레티클 및 레티클의 정렬방법Reticle for Photo Processing

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명에 따른 레티클의 구조도.1 is a structural diagram of a reticle according to the present invention.

Claims (10)

반도체소자의 제조공정중 포토 리소그래피 공정에서 웨이퍼 상에 패턴을 형성하기 위해 사용되는 레티클에있어서, 상기 레티클의 에지 및 센터상에 패턴의 스텝별로 레티클을 정렬하여 주는 정렬수단을 포함하는 것을 특징으로 하는 사진공정용 레티클.A reticle used to form a pattern on a wafer in a photolithography process during a manufacturing process of a semiconductor device, the reticle comprising alignment means for aligning the reticle per step of the pattern on the edge and center of the reticle Reticle for photo process. 제1항에 있어서, 상기 정렬수단은 상기 레티클의 중심부위와 스크리브 라인내 상하부에 각각 소정크키의 키를형성하고, 스크리브라인이 없는 가상 스크리브 라인에 상기 키와 대칭되게 키를 형성한 것을 특징으로 하는사진공정용 레티클.The method of claim 1, wherein the aligning means forms a key of a predetermined key on the center of the reticle and the upper and lower portions of the screb line, respectively, and forms the key symmetrically with the key on the virtual screed line without screbriin. Reticle for photo process, characterized in that. 제2항에 있어서, 상기 키는 박스와 바형의 마크중 어느 하나를 사용한 것을 특징으로 하는 사진공정용 레티클.The reticle for photolithography process according to claim 2, wherein the key uses one of a box and a bar mark. 제2항에 있어서. 상기 스크리브 라인내에 형성된 상기 키의 일측에 키를 하나씩 추가로 형성한 것을 특징으로하는 사진공정용 레티클.The method of claim 2. Reticle for a photo process, characterized in that additionally formed by one key on one side of the key formed in the scree line. 제2항에 있어서, 상기 레티클상에 추가로 형성된 키는 피치의 단계적으로 진행하는 방향의 반대측에 형성된 것을 특징으로 하는 사진공정용 레티클.The reticle for photolithography process according to claim 2, wherein the key further formed on the reticle is formed on the opposite side of the pitched stepwise direction. 제2항 또는 제3항에 있어서, 상기 가상의 스크리브 라인내 형성된 키와 상기 추가된 키중 어느 하나의 키는 단계별 피치의 이동 범위를 벗어난 위치에 형성된 것을 특징으로 하는 사진공정용 레티클.4. The reticle for photo process according to claim 2 or 3, wherein the key formed in the virtual screed line and any one of the added keys are formed at a position out of a step pitch movement range. 제2항 또는 제3항에 있어서, 상기 추가된 키는 노광되지 않도록 크롬 보호층으로 형성한 것을 특징으로 하는 사진공정용 레티클.The reticle for photo process according to claim 2 or 3, wherein the added key is formed of a chromium protective layer so as not to be exposed. 제1항에 있어서, 상기 레티클은 페턴을 형성하는 사진공정시 첫 단계의 패턴형성공정에 사용하는 것을 특징으로 하는 사진공정용 레티클.The reticle of claim 1, wherein the reticle is used in a pattern forming process of a first step in a photolithography process of forming a pattern. 사진공정의 패턴을 형성하기 위해 단계별 1피치의 이동시 상기 레티클에 의한 노광부위를 다음 스텝에서 일부 중복시켜 레티클을 정렬하는 사진공정용 레티클 정렬방법.A reticle alignment method for photolithography, wherein the reticle is aligned by partially overlapping an exposed portion by the reticle in the next step when moving one pitch step by step to form a photolithography pattern. 제6항에 있어서. 상기 레티클의 중복부위에는 상기 레티클상에 형성되어 있는 추가 키의 위치가 1피치 이동하여 다음 단계의 패턴시 새로 위치한 레티클에 형성된 가상 스크리브라인에 형성된 키와 정확히 일치시켜 패턴을 정렬하는 사진공정용 레티클 정렬방법.The method of claim 6. In the overlapping part of the reticle, the position of the additional key formed on the reticle is moved 1 pitch so that the pattern is aligned exactly by matching the key formed on the virtual scree brine formed on the newly located reticle during the next pattern. How to align the reticle. ※ 참고사항:최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950043921A 1995-11-27 1995-11-27 A reticle for photo-processes KR0161594B1 (en)

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Application Number Priority Date Filing Date Title
KR1019950043921A KR0161594B1 (en) 1995-11-27 1995-11-27 A reticle for photo-processes

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Application Number Priority Date Filing Date Title
KR1019950043921A KR0161594B1 (en) 1995-11-27 1995-11-27 A reticle for photo-processes

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KR970028812A true KR970028812A (en) 1997-06-24
KR0161594B1 KR0161594B1 (en) 1999-01-15

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100480609B1 (en) * 2002-08-09 2005-04-06 삼성전자주식회사 Method of electron beam lithography

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100480609B1 (en) * 2002-08-09 2005-04-06 삼성전자주식회사 Method of electron beam lithography

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