KR970028812A - Reticle for Photo Processing - Google Patents
Reticle for Photo Processing Download PDFInfo
- Publication number
- KR970028812A KR970028812A KR1019950043921A KR19950043921A KR970028812A KR 970028812 A KR970028812 A KR 970028812A KR 1019950043921 A KR1019950043921 A KR 1019950043921A KR 19950043921 A KR19950043921 A KR 19950043921A KR 970028812 A KR970028812 A KR 970028812A
- Authority
- KR
- South Korea
- Prior art keywords
- reticle
- key
- pattern
- photolithography
- line
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
본 발명은 반도체소자 제조공정중에서 사진공정시 웨이퍼에 패턴을 형성하는데 사용하는 레티클에 관한 것으로, 특히 정렬정도를 향상시킬 수 있는 사진공정용 레티클과 이 레티클의 정렬방법에 대한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reticle used to form a pattern on a wafer during a photolithography process in a semiconductor device manufacturing process, and more particularly to a reticle for photolithography and an alignment method of the reticle for improving alignment.
종래의 레티클은 스크리브 라인내 양 에지에 형성된 키만으로 각 스텝별로 서로 정렬하게 되어 장시간 사용하게 되면 렌즈 왜곡이 서로 달라서 패턴 미스의 체크시 데이터 오류의 발생을 방지할 수 없게 되는 문제점이 있었다.The conventional reticle is aligned with each step only by keys formed at both edges of the screed line, and thus, when used for a long time, lens distortion is different, and thus there is a problem in that data errors cannot be prevented when a pattern miss is checked.
본 발명은 상술한 문제점을 극복하기 위한 것으로, 레티클의 중심부위와 스크리브 라인내 상하부에 각각 소정크기의 키를 형성하고, 스크리브라인이 없는 가장 스크리브 라인에 상기 키와 대칭되게 키를 형성하여, 단계별 1피치의 이동시 상기 레티클에 의한 노광부위를 다음 스텝에서 일부 중복시켜 레티클을 정렬하므로서 렌즈의 왜곡현상을 적절히 조정하여 정렬하므로서 패턴을 형성하도록 하였다.SUMMARY OF THE INVENTION The present invention is to overcome the above-mentioned problems, and a key having a predetermined size is formed on the center of the reticle and the upper and lower portions of the screb line, and the keys are formed symmetrically with the key on the most screed line without screbriin. Thus, the pattern is formed by properly adjusting and aligning the distortion phenomenon of the lens by aligning the reticles by partially overlapping the exposure area by the reticle in the next step when the step 1 pitch is moved.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1도는 본 발명에 따른 레티클의 구조도.1 is a structural diagram of a reticle according to the present invention.
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950043921A KR0161594B1 (en) | 1995-11-27 | 1995-11-27 | A reticle for photo-processes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950043921A KR0161594B1 (en) | 1995-11-27 | 1995-11-27 | A reticle for photo-processes |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970028812A true KR970028812A (en) | 1997-06-24 |
KR0161594B1 KR0161594B1 (en) | 1999-01-15 |
Family
ID=19435852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950043921A KR0161594B1 (en) | 1995-11-27 | 1995-11-27 | A reticle for photo-processes |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0161594B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100480609B1 (en) * | 2002-08-09 | 2005-04-06 | 삼성전자주식회사 | Method of electron beam lithography |
-
1995
- 1995-11-27 KR KR1019950043921A patent/KR0161594B1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100480609B1 (en) * | 2002-08-09 | 2005-04-06 | 삼성전자주식회사 | Method of electron beam lithography |
Also Published As
Publication number | Publication date |
---|---|
KR0161594B1 (en) | 1999-01-15 |
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Payment date: 20060728 Year of fee payment: 9 |
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LAPS | Lapse due to unpaid annual fee |