KR970027373A - 청색수정의 제조방법 - Google Patents

청색수정의 제조방법 Download PDF

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Publication number
KR970027373A
KR970027373A KR1019950041636A KR19950041636A KR970027373A KR 970027373 A KR970027373 A KR 970027373A KR 1019950041636 A KR1019950041636 A KR 1019950041636A KR 19950041636 A KR19950041636 A KR 19950041636A KR 970027373 A KR970027373 A KR 970027373A
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South Korea
Prior art keywords
crystal
temperature
autoclave
sodium carbonate
blue
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KR1019950041636A
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English (en)
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KR0147145B1 (ko
Inventor
박로학
이영국
이강현
정석종
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강박광
재단법인 한국화학연구소
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Priority to KR1019950041636A priority Critical patent/KR0147145B1/ko
Publication of KR970027373A publication Critical patent/KR970027373A/ko
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Publication of KR0147145B1 publication Critical patent/KR0147145B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

목적
본원 발명은 코발트 이온이 탄산나트륨 수열용액내에서의 안정된 온도범위를 규명하고, 종자결정 표면에 남아 있는 미세결함을 제거하여 균일색상의 청색수정을 육성, 제조하는데 목적이 있다.
구성
조쇄한 천연수정 Co3O4분말을 용기에 넣어 오토클레이브의 하단부(원료용해부)에 장착하고 대류조절판을 오토클레이브의 중앙부에 얹은 후 (0001)방향의 판상 종자결정을 상단부(결정육성부)에 정착한 후 이에 탄산나트륨과 질산리튬 혼합용액을 충전후 오토클레이브를 밀폐하고 수열에칭한 다음 상단부 온도를 강하시키고 하단부 온도를 승온시킨 후 일정기간 유지하여 결정을 육성하는 청색수정의 제조방법이다.

Description

청색수정의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (7)

  1. 조쇄한 천연수정 Co3O4분말을 용기에 넣어 오토클레이브의 하단부(원료용해부)에 장착하고 대류조절판을 오토클레이브의 중앙부에 얹은 후 (0001)방향의 판상 종자결정을 상단부(결정육성부)에 장착한 후 이에 탄산나트륨과 질산리튬 혼합용액을 충전 후 오토클레이브를 밀폐하고 수열에칭한 다음 상단부 온도를 강하시키고 하단부 온도를 승온시킨 후 일정기간 유지하여 결정을 육성하여서 된 청색수정의 제조방법.
  2. 제1항에 있어서, 개공도 10%의 대류조절판임을 특징으로 하는 청색수정의 제조방법.
  3. 제1항에 있어서, 8wt%의 탄산나트륨 수용액 990g에 질산리튬 10g을 첨가하여 조제한 충전용액임을 특징으로 하는 청색수정의 제조방법.
  4. 제1항에 있어서, 충전용액의 충전율이 81%임을 특징으로 하는 청색수정의 제조방법.
  5. 제1항에 있어서, 결정육성 전 수열에칭은 상단부온도 370~375℃, 하단부온도 340~345℃에서 10시간 내지 2일간 유지함을 특징으로 하는 청색수정의 제조방법.
  6. 제1항에 있어서, 수열에칭후의 상단부온도 340~345℃, 하단부온도 370~375℃임을 특징으로 하는 청색수정의 제조방법.
  7. 제1항에 있어서, 30일간 유지하여 결정을 육성함을 특징으로 하는 청색수정의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950041636A 1995-11-16 1995-11-16 청색수정의 제조방법 KR0147145B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950041636A KR0147145B1 (ko) 1995-11-16 1995-11-16 청색수정의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950041636A KR0147145B1 (ko) 1995-11-16 1995-11-16 청색수정의 제조방법

Publications (2)

Publication Number Publication Date
KR970027373A true KR970027373A (ko) 1997-06-24
KR0147145B1 KR0147145B1 (ko) 1998-08-17

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KR1019950041636A KR0147145B1 (ko) 1995-11-16 1995-11-16 청색수정의 제조방법

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KR0147145B1 (ko) 1998-08-17

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