KR970025780U - Ion source head insulator - Google Patents
Ion source head insulatorInfo
- Publication number
- KR970025780U KR970025780U KR2019950035344U KR19950035344U KR970025780U KR 970025780 U KR970025780 U KR 970025780U KR 2019950035344 U KR2019950035344 U KR 2019950035344U KR 19950035344 U KR19950035344 U KR 19950035344U KR 970025780 U KR970025780 U KR 970025780U
- Authority
- KR
- South Korea
- Prior art keywords
- ion source
- source head
- head insulator
- insulator
- ion
- Prior art date
Links
- 239000012212 insulator Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019950035344U KR200202978Y1 (en) | 1995-11-23 | 1995-11-23 | Insulator of ion source head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019950035344U KR200202978Y1 (en) | 1995-11-23 | 1995-11-23 | Insulator of ion source head |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970025780U true KR970025780U (en) | 1997-06-20 |
KR200202978Y1 KR200202978Y1 (en) | 2000-12-01 |
Family
ID=19430139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR2019950035344U KR200202978Y1 (en) | 1995-11-23 | 1995-11-23 | Insulator of ion source head |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR200202978Y1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030094999A (en) * | 2002-06-11 | 2003-12-18 | 삼성전자주식회사 | Aline jig of manipulator for implater |
-
1995
- 1995-11-23 KR KR2019950035344U patent/KR200202978Y1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR200202978Y1 (en) | 2000-12-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
REGI | Registration of establishment | ||
FPAY | Annual fee payment |
Payment date: 20060830 Year of fee payment: 7 |
|
LAPS | Lapse due to unpaid annual fee |