KR970024244A - Light receiving element and manufacturing method - Google Patents

Light receiving element and manufacturing method Download PDF

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Publication number
KR970024244A
KR970024244A KR1019950035641A KR19950035641A KR970024244A KR 970024244 A KR970024244 A KR 970024244A KR 1019950035641 A KR1019950035641 A KR 1019950035641A KR 19950035641 A KR19950035641 A KR 19950035641A KR 970024244 A KR970024244 A KR 970024244A
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KR
South Korea
Prior art keywords
light receiving
inp
receiving element
layer
metal pad
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KR1019950035641A
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Korean (ko)
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KR100190190B1 (en
Inventor
이종철
신근호
조유리
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019950035641A priority Critical patent/KR100190190B1/en
Publication of KR970024244A publication Critical patent/KR970024244A/en
Application granted granted Critical
Publication of KR100190190B1 publication Critical patent/KR100190190B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)

Abstract

본 발명은 광통신용 수광 소자(photo detector)및 그 제조방법에 관한것으로, 반도체 InP 기판상부에 InGaAs 에피층과 InP 층이 적층되고, 상기 InP층 상부에 두개의 금속 패드가 수광부를 중심으로 양측에 구비되되 특성 임피던스가 50Ω이 되도록 금속 패드의 폭과 두께 및 선폭의 간격이 조절된 비대칭된 진행파 수광 소자 및 그 제조방법 에 관한것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photodetector for optical communication and a method of manufacturing the same, wherein an InGaAs epi layer and an InP layer are stacked on a semiconductor InP substrate, and two metal pads are disposed on both sides of the light receiving unit. The present invention relates to an asymmetric traveling wave receiving device having a width of a metal pad and a thickness and a line width spaced so as to have a characteristic impedance of 50Ω, and a method of manufacturing the same.

Description

수광 소자 및 그 제조방법Light receiving element and manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명에 의해 형성되는 수광소자의 금속 패드의 평면도.1 is a plan view of a metal pad of a light receiving element formed by the present invention.

Claims (4)

수광 소자에 있어서, 반도체 InP 기판상부에 InGaAs 에피층과 InP 층이 적층되고, 상기 InP 상부에 두개의 금속 패드가 수광부를 중심으로 양측에 구비되되 특성 임피던스가 50Ω이 되도록 두개의 금속 패드의 폭과 두께 및 선폭의 간격이 조절된 것을 특징으로 하는 수광 소자.In the light receiving device, an InGaAs epi layer and an InP layer are stacked on a semiconductor InP substrate, and two metal pads are disposed on both sides of the light receiving unit on the upper side of the InP, and the widths of the two metal pads have a characteristic impedance of 50Ω. Light-receiving element, characterized in that the interval between the thickness and line width is adjusted. 제1항에 있어서, 상기 수광 소자의 수광부에 반사방지막이 형성된 것을 특징으로 하는 수광소자.The light receiving element according to claim 1, wherein an anti-reflection film is formed on the light receiving portion of the light receiving element. 제1항에 있어서, 상기 금속 패드는 비대칭형 진행파 타입의 금속 패드를 사용하는 것을 특징으로 하는 수광 소자.The light receiving device according to claim 1, wherein the metal pad uses a metal pad of an asymmetric traveling wave type. 수광 소자 제조방법에 있어서, 반도체 InP 기판상부에 InGaAs 에피층과 InP 층을 적층하는 단계와, 상기 InP 층의 상부에 감광막을 도포하는 단계와, 금속 패드가 형성될 부분의 감광막을 제거하여 비대칭형 진행파 수광소자에 필요한 감광막패턴을 형성하는 단계와, 상기 감광막패턴을 마스크로 사용하여 노출된 InP층의 상부에 콘택되는 비대칭형 금속 패드을 형성하되 50Ω의 특성 임피던스가 되도록 형성하는 단계와, 상기 감광막패턴을 제거하고 감광막 패턴이 제거된 지역의 InP층에 반사방지막을 형성하는 단계를 포함하는 수광 소자 제조방법.A method of manufacturing a light-receiving device, comprising: laminating an InGaAs epi layer and an InP layer on a semiconductor InP substrate, applying a photoresist film on top of the InP layer, and removing a photoresist film on a portion where a metal pad is to be formed, which is asymmetrical. Forming a photoresist pattern required for the traveling wave receiving element, forming an asymmetric metal pad contacted on the exposed InP layer using the photoresist pattern as a mask, and forming a characteristic impedance of 50? And removing an anti-reflection film on the InP layer in the region where the photoresist pattern is removed. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950035641A 1995-10-16 1995-10-16 Photo detecting device and maufacturing method of the same KR100190190B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950035641A KR100190190B1 (en) 1995-10-16 1995-10-16 Photo detecting device and maufacturing method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950035641A KR100190190B1 (en) 1995-10-16 1995-10-16 Photo detecting device and maufacturing method of the same

Publications (2)

Publication Number Publication Date
KR970024244A true KR970024244A (en) 1997-05-30
KR100190190B1 KR100190190B1 (en) 1999-07-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950035641A KR100190190B1 (en) 1995-10-16 1995-10-16 Photo detecting device and maufacturing method of the same

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100724523B1 (en) * 2004-05-18 2007-06-04 니폰덴신뎅와 가부시키가이샤 Electrode pad on conductive semiconductor substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100724523B1 (en) * 2004-05-18 2007-06-04 니폰덴신뎅와 가부시키가이샤 Electrode pad on conductive semiconductor substrate

Also Published As

Publication number Publication date
KR100190190B1 (en) 1999-07-01

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