KR970023820A - BST thin film manufacturing method with high dielectric properties - Google Patents

BST thin film manufacturing method with high dielectric properties Download PDF

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Publication number
KR970023820A
KR970023820A KR1019950033876A KR19950033876A KR970023820A KR 970023820 A KR970023820 A KR 970023820A KR 1019950033876 A KR1019950033876 A KR 1019950033876A KR 19950033876 A KR19950033876 A KR 19950033876A KR 970023820 A KR970023820 A KR 970023820A
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South Korea
Prior art keywords
thin film
reaction
bst
film manufacturing
gas
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KR1019950033876A
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Korean (ko)
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KR0164071B1 (en
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백용구
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김주용
현대전자산업주식회사
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Priority to KR1019950033876A priority Critical patent/KR0164071B1/en
Priority to US08/729,676 priority patent/US5670218A/en
Priority to GB9620757A priority patent/GB2305940B/en
Priority to CN96121174A priority patent/CN1069112C/en
Priority to DE19641058A priority patent/DE19641058C2/en
Priority to JP26480596A priority patent/JP3218304B2/en
Priority to GB9918955A priority patent/GB2336850B/en
Publication of KR970023820A publication Critical patent/KR970023820A/en
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Publication of KR0164071B1 publication Critical patent/KR0164071B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 고유전 특성을 가진 BST 박막 제조방법에 관한 것으로, 박막 제조장치에 RF 파워를 인가하여 플라즈마를 여기시킴으로써 다원계의 BST용 반응원료들이 증착반응에 쉽게 참여할 수 있도록 물리적 에너지로 해리 반응을 조장하고, 플라즈마를 형성함으로써 해리된 반응원료 이온들이 매우 낮은 압력에서 고온으로 증착반응을 일으킬 수 있도록 조장하는 공정조건을 설정하며, 반응원료들이 열화반응 없이 재현성 있게 반응로에 도달하게 해주는 방식으로 원료를 공급하며, BST박막용 원료들의 대부분이 실온에서 고체이거나 액체형태임에 따라 이들 반응원료가 기화되어 공급될 때, 가스관에 남아 있을 수 있는 잔류가스는 제거하면서 BST박막을 증착함으로써 고유전 특성의 양호한 BST박막을 형성할 수 있다.The present invention relates to a BST thin film manufacturing method having a high dielectric property, by applying RF power to the thin film manufacturing apparatus to excite the plasma to dissociate the reaction by physical energy so that the reaction materials for BST of the multi-system can easily participate in the deposition reaction. By setting up the plasma and forming the plasma, the process conditions are set up so that dissociated reaction raw material ions can be deposited at a high temperature at a very low pressure, and the raw materials are reproduced in a reproducible manner without deterioration. As most of the raw materials for BST thin film are solid or liquid at room temperature, when these reaction raw materials are vaporized and supplied, the BST thin film is deposited while removing residual gas remaining in the gas pipe. Good BST thin film can be formed.

Description

고유전 특성을 가진 비.에스.티(BST) 박막제조방법BST thin film manufacturing method with high dielectric properties

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명에 따른 BST 박막증작용 장치의 구성을 도시한 단면도.1 is a cross-sectional view showing the configuration of a BST thin film deposition apparatus according to the present invention.

Claims (9)

BST 박막 제조방법에 있어서, RF 파워를 인가하여 플라즈마를 여기시킴으로써 다원계의 BST용 반응원료들이 증착반응에 쉽게 참여할 수 있도록 물리적 에너지로 해리반응을 유도하는 단계와, 상기 여기된 플라즈마에 의해 해리된 반응원료 이온들이 낮은 압력에서 고온으로 증착반응을 일으킬 수 있도록 공정조건을 설정하는 단계와, 상기 반응원료들이 열화반응없이 반응로에 도달하도록 원할한 공급을 하는 단계와, 반응로 내부에서 가스관에 남아 있는 기화된 반응원로의 잔류가스를 제거하면서 BST 박막을 증착하는 단계로 구성되는 것을 특징으로 하는 BST 박막 제조방법.In the BST thin film manufacturing method, by inducing a plasma by applying RF power to induce a dissociation reaction with physical energy so that the reaction materials for the multi-system BST can easily participate in the deposition reaction, and the dissociation by the excited plasma Setting the process conditions so that the reaction raw material ions can cause the deposition reaction at a high temperature at low pressure, and supplying the reaction raw materials to the reactor without deterioration reaction and remaining in the gas pipe inside the reactor. BST thin film manufacturing method comprising the step of depositing a BST thin film while removing the residual gas of the vaporized reaction source. 제1항에 있어서, 상기 잔류가스를 제거하기 위한 퍼징가스를 기화된 아민기 케미컬과 N2가스를 사용하는 것을 특징으로 하는 고유전 특성을 가진 BST박막 제조방법.The method of claim 1, wherein the purge gas for removing the residual gas is a vaporized amine group chemical and N 2 gas. 제2항에 있어서 상기 퍼징가스는 인접된 매니폴드를 통하여 곧바로 펌프로 빠져나가는 것을 특징으로 하는 고유전 특성을 가진 BST박막 제조방법.The method of claim 2, wherein the purging gas is immediately pumped through an adjacent manifold. 제1항 또는 제2항에 있어서 기화된 반응원료 및 퍼징용 가스가 가스관에서 재응측이 일어나는 것을 방지하기 위해 가스관 내부온도를 200~300℃로 유지되게 하는 것을 것을 특징으로 하는 고유전 특성을 BST박막 제조방법.The high-k dielectric property of claim 1 or 2, wherein the vaporized reaction raw material and the purging gas are maintained at a temperature of 200 to 300 ° C. to prevent re-condensation in the gas pipe. Thin film manufacturing method. 제1항에 있어서 상기 박막증착 과정중 반응원료들간의 기상반응에 의해 파티클이 형성되는 것을 방지하기 위해 샤워 헤드를 고온으로 유지시키고, 교류형 RF 파워를 인가하는 것을 특징으로 하는 고유전 특성을 가진 BST 박막 제조방법.The method of claim 1, wherein the shower head is maintained at a high temperature and an alternating current (RF) power is applied to prevent particles from being formed by the gas phase reaction between the reaction materials during the thin film deposition process. BST thin film manufacturing method. 제5항에 있어서 상기 샤워헤드의 온도의 200~250℃에서 제어되도록 하는 것을 특징으로 하는 고유전 특성을 가진 BST박막 제조방법.The BST thin film manufacturing method according to claim 5, wherein the shower head is controlled at 200 ° C. to 250 ° C. of the shower head. 제1항에 있어서 상기 배플가이드 및 RF일렉트로드용 플레이트에 형성된 박막을 CF4나 C2F6, NF3, SF4등과 O2를 플라즈마로 여과시켜 식가시키는 것을 특징으로 하는 고유전 특성을 가진 BST박막 제조방법.The BST having high dielectric properties according to claim 1, wherein the thin film formed on the baffle guide and the RF electrorod plate is filtered through CF 4 or C 2 F 6 , NF 3 , SF 4, and O 2 by plasma. Thin film manufacturing method. 제1항에 있어서 상기 반응원료들의 안정적인 공급을 위해 아민기를 리건드로 in-situ 합성할 수 있는 반응원료 및 공급방식을 사용하는 것을 특징으로 하는 고유전 특성을 가진 BST 박막 제조방법.According to claim 1, BST thin film manufacturing method having a high dielectric property, characterized in that for the stable supply of the reaction raw material using a reaction raw material and a feed method that can be synthesized in-situ amine groups in the regan. 제8항에 있어서 상기 아민기를 in-stu합성하기 위해 NET3, NH2R은 캐리어 가스로 사용하는 것을 특징으로 하는 고유전 특성을 가진 BST 박막 제조방법.10. The method of claim 8, wherein NET 3 , NH 2 R is used as a carrier gas to in-stu synthesize the amine group. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950033876A 1995-10-04 1995-10-04 Method of manufacturing b.s.t film KR0164071B1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1019950033876A KR0164071B1 (en) 1995-10-04 1995-10-04 Method of manufacturing b.s.t film
US08/729,676 US5670218A (en) 1995-10-04 1996-10-03 Method for forming ferroelectric thin film and apparatus therefor
GB9620757A GB2305940B (en) 1995-10-04 1996-10-04 Method for forming ferroelectric thin film
CN96121174A CN1069112C (en) 1995-10-04 1996-10-04 Method for forming ferroelectric thin film and apparatus therefor
DE19641058A DE19641058C2 (en) 1995-10-04 1996-10-04 Method of forming a ferroelectric thin film and device therefor
JP26480596A JP3218304B2 (en) 1995-10-04 1996-10-04 High dielectric thin film manufacturing method
GB9918955A GB2336850B (en) 1995-10-04 1996-10-04 Apparatus for forming ferroelectric thin film

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Application Number Priority Date Filing Date Title
KR1019950033876A KR0164071B1 (en) 1995-10-04 1995-10-04 Method of manufacturing b.s.t film

Publications (2)

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KR970023820A true KR970023820A (en) 1997-05-30
KR0164071B1 KR0164071B1 (en) 1999-02-01

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