KR970023758A - Pattern Formation Method - Google Patents
Pattern Formation Method Download PDFInfo
- Publication number
- KR970023758A KR970023758A KR1019950038995A KR19950038995A KR970023758A KR 970023758 A KR970023758 A KR 970023758A KR 1019950038995 A KR1019950038995 A KR 1019950038995A KR 19950038995 A KR19950038995 A KR 19950038995A KR 970023758 A KR970023758 A KR 970023758A
- Authority
- KR
- South Korea
- Prior art keywords
- base layer
- photoresist pattern
- pattern
- forming method
- size
- Prior art date
Links
Abstract
하지층의 영향에 의하여 포토레지스트 패턴의 크기가 변하지 않는 패턴 형성 방법에 관하여 개시한다. 본 발명은 하지층 위에 포토레지스트 패턴을 형성하는 패턴 형성 방법에 있어서, 상기 하지층의 두께 변화로 인하여 상기 포토레지스트 패턴의 크기가 변하는 것을 방지하기 위하여 상기 포토레지스트 패턴과 상기 하지층 사이에 하지 반사 방지막을 삽입하는 패턴 형성 방법을 제공한다. 본 발명에 의하여 상기 하지층의 두께 변화에 의하여 상기 하지층과 상기 반도체 기판 사이의 계면에서 반사하는 빛은 영향을 주지 않는다. 따라서, 상기 하지층의 두께가 변하여도 형성되는 포토레지스트 패턴의 크기는 변하지 않고 일정한 크기를 유지한다.A pattern formation method in which the size of the photoresist pattern does not change under the influence of the underlying layer is disclosed. The present invention provides a pattern forming method for forming a photoresist pattern on a base layer, wherein the base reflection is reflected between the photoresist pattern and the base layer in order to prevent the size of the photoresist pattern from being changed due to the thickness change of the base layer. A pattern forming method for inserting a protective film is provided. According to the present invention, the light reflected at the interface between the base layer and the semiconductor substrate by the thickness change of the base layer does not affect. Therefore, the size of the photoresist pattern formed even if the thickness of the underlayer is changed does not change and maintains a constant size.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2도는 하지 반사 방지막을 이용한 본 발명에 따른 패턴 형성 방법에 대하여 설명하기 위한 단면도이다.2 is a cross-sectional view for explaining a pattern forming method according to the present invention using a base anti-reflection film.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950038995A KR970023758A (en) | 1995-10-31 | 1995-10-31 | Pattern Formation Method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950038995A KR970023758A (en) | 1995-10-31 | 1995-10-31 | Pattern Formation Method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970023758A true KR970023758A (en) | 1997-05-30 |
Family
ID=66584296
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950038995A KR970023758A (en) | 1995-10-31 | 1995-10-31 | Pattern Formation Method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970023758A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100314261B1 (en) * | 1999-05-11 | 2001-11-15 | 황인길 | Method for fabricating semiconductor devices |
-
1995
- 1995-10-31 KR KR1019950038995A patent/KR970023758A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100314261B1 (en) * | 1999-05-11 | 2001-11-15 | 황인길 | Method for fabricating semiconductor devices |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4013465A (en) | Reducing the reflectance of surfaces to radiation | |
KR850005731A (en) | Pattern Detection Method | |
PL367433A1 (en) | Security element | |
EP0390092A3 (en) | Encoder | |
KR960032090A (en) | Pattern formation method | |
RU2020113099A (en) | OPTICAL PROTECTIVE ELEMENT | |
JPH03266842A (en) | Reflection type photolithography method, reflection type photolithography device and reflection type photomask | |
KR970023758A (en) | Pattern Formation Method | |
KR970016811A (en) | Modified illumination method, reflector used in the same and manufacturing method thereof | |
JP2002241193A5 (en) | ||
ATE281656T1 (en) | OPTICAL REFLECTOR AND ITS MANUFACTURING PROCESS | |
KR970061543A (en) | Phase Formation Method with Reduced Interference Pattern in Thermal Movement | |
KR970067548A (en) | Method for fabricating the device and antireflective coating for use therein | |
KR950012151A (en) | Pattern formation method using multilayer resist | |
JPH0697065A (en) | Fine resist pattern forming method | |
KR960019536A (en) | Method of Forming Photosensitive Film Pattern by Lithography Process | |
KR940009756A (en) | Exposure method in the manufacture of semiconductor device | |
KR950019909A (en) | Photomasks and Photomask Blanks | |
KR970012016A (en) | Method of forming photoresist pattern by second or more exposure | |
KR970071122A (en) | Mask that can reduce reflected light by step | |
KR980005295A (en) | MARK and its manufacturing method | |
KR970012005A (en) | Method of forming photoresist pattern with improved notching phenomenon | |
KR950004396A (en) | Resolution enhancement method for wafers with high reflectivity | |
KR950001412A (en) | Method for forming fine line width pattern of semiconductor device using antireflective layer | |
KR970051880A (en) | Method of forming photoresist of semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Withdrawal due to no request for examination |