KR970023758A - Pattern Formation Method - Google Patents

Pattern Formation Method Download PDF

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Publication number
KR970023758A
KR970023758A KR1019950038995A KR19950038995A KR970023758A KR 970023758 A KR970023758 A KR 970023758A KR 1019950038995 A KR1019950038995 A KR 1019950038995A KR 19950038995 A KR19950038995 A KR 19950038995A KR 970023758 A KR970023758 A KR 970023758A
Authority
KR
South Korea
Prior art keywords
base layer
photoresist pattern
pattern
forming method
size
Prior art date
Application number
KR1019950038995A
Other languages
Korean (ko)
Inventor
이창환
성낙근
여정호
조성목
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950038995A priority Critical patent/KR970023758A/en
Publication of KR970023758A publication Critical patent/KR970023758A/en

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Abstract

하지층의 영향에 의하여 포토레지스트 패턴의 크기가 변하지 않는 패턴 형성 방법에 관하여 개시한다. 본 발명은 하지층 위에 포토레지스트 패턴을 형성하는 패턴 형성 방법에 있어서, 상기 하지층의 두께 변화로 인하여 상기 포토레지스트 패턴의 크기가 변하는 것을 방지하기 위하여 상기 포토레지스트 패턴과 상기 하지층 사이에 하지 반사 방지막을 삽입하는 패턴 형성 방법을 제공한다. 본 발명에 의하여 상기 하지층의 두께 변화에 의하여 상기 하지층과 상기 반도체 기판 사이의 계면에서 반사하는 빛은 영향을 주지 않는다. 따라서, 상기 하지층의 두께가 변하여도 형성되는 포토레지스트 패턴의 크기는 변하지 않고 일정한 크기를 유지한다.A pattern formation method in which the size of the photoresist pattern does not change under the influence of the underlying layer is disclosed. The present invention provides a pattern forming method for forming a photoresist pattern on a base layer, wherein the base reflection is reflected between the photoresist pattern and the base layer in order to prevent the size of the photoresist pattern from being changed due to the thickness change of the base layer. A pattern forming method for inserting a protective film is provided. According to the present invention, the light reflected at the interface between the base layer and the semiconductor substrate by the thickness change of the base layer does not affect. Therefore, the size of the photoresist pattern formed even if the thickness of the underlayer is changed does not change and maintains a constant size.

Description

패턴 형성 방법Pattern Formation Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 하지 반사 방지막을 이용한 본 발명에 따른 패턴 형성 방법에 대하여 설명하기 위한 단면도이다.2 is a cross-sectional view for explaining a pattern forming method according to the present invention using a base anti-reflection film.

Claims (3)

하지층 위에 포토레지스트 패턴을 형성하는 패턴 형성 방법에 있어서, 상기 하지층의 두께 변화로 인하여 상기 포토레지스트 패턴의 크기가 변하는 것을 방지하기 위하여 상기 포토레지스트 패턴과 상기 하지층 사이에 하지 반사 방지막을 삽입하는 것을 특징으로 하는 패턴 형성 방법.A pattern forming method of forming a photoresist pattern on a base layer, wherein a bottom anti-reflection film is inserted between the photoresist pattern and the base layer to prevent the size of the photoresist pattern from changing due to the thickness change of the base layer. Pattern forming method characterized in that. 제1항에 있어서, 상기 하지 반사 방지막의 굴절율은 상기 포토레지스트의 굴절률과 상기 하지층의 굴절률 사이의 범위에 있는 것을 특징으로 하는 패턴 형성 방법.The pattern forming method according to claim 1, wherein the refractive index of the base antireflection film is in a range between the refractive index of the photoresist and the refractive index of the base layer. 제1항에 있어서, 상기 하지 반사 방지막의 두께는 상기 하지 반사 방지막의 굴절률과 노광에 사용하는 빛의 반파장을 곱한 범위에 있는 것을 특징으로 하는 패턴 형성 방법.The pattern forming method according to claim 1, wherein the thickness of the base antireflection film is in a range multiplied by the refractive index of the base antireflection film and the half wavelength of light used for exposure. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950038995A 1995-10-31 1995-10-31 Pattern Formation Method KR970023758A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950038995A KR970023758A (en) 1995-10-31 1995-10-31 Pattern Formation Method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950038995A KR970023758A (en) 1995-10-31 1995-10-31 Pattern Formation Method

Publications (1)

Publication Number Publication Date
KR970023758A true KR970023758A (en) 1997-05-30

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ID=66584296

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950038995A KR970023758A (en) 1995-10-31 1995-10-31 Pattern Formation Method

Country Status (1)

Country Link
KR (1) KR970023758A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100314261B1 (en) * 1999-05-11 2001-11-15 황인길 Method for fabricating semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100314261B1 (en) * 1999-05-11 2001-11-15 황인길 Method for fabricating semiconductor devices

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