KR970015795A - Crystal fuller - Google Patents
Crystal fuller Download PDFInfo
- Publication number
- KR970015795A KR970015795A KR1019960041961A KR19960041961A KR970015795A KR 970015795 A KR970015795 A KR 970015795A KR 1019960041961 A KR1019960041961 A KR 1019960041961A KR 19960041961 A KR19960041961 A KR 19960041961A KR 970015795 A KR970015795 A KR 970015795A
- Authority
- KR
- South Korea
- Prior art keywords
- crystal
- container
- protective gas
- heater
- puller
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
포트(4)에서 용융가능한 재료로부터 크리스털 블록을 형성하기 위한 크리스털 풀러는 용기(1)에서 상기 포트(4)를 에워싸는 히터(5)를 갖는다. 이 용기(1)는 상기 포트(4)의 영역에서 내측 보호관(6)에 의해 히터(5)를 향해 제한된, 상기 보호 가스 아웃렛(14, 15)과 연결되어 있는 원형 공간(8)을 가지며, 이것은 외측에서 외측 보호관(7)에 의해 제한되며, 이 뒤에 상기 용기(1)의 열전열물(10)이 위치한다.The crystal puller for forming the crystal block from the meltable material in the port 4 has a heater 5 which encloses the port 4 in the container 1. The vessel 1 has a circular space 8 connected with the protective gas outlets 14, 15, which is limited towards the heater 5 by an inner protective tube 6 in the region of the port 4, This is constrained by the outer protective tube 7 on the outside, followed by the heat transfer 10 of the container 1.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19535750 | 1995-09-26 | ||
DE19535750.7 | 1995-09-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970015795A true KR970015795A (en) | 1997-04-28 |
KR100220118B1 KR100220118B1 (en) | 1999-09-01 |
Family
ID=7773204
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960041961A KR100220118B1 (en) | 1995-09-26 | 1996-09-24 | Crystal pulling apparatus |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR100220118B1 (en) |
DE (2) | DE19539316A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19780188B4 (en) * | 1996-02-08 | 2006-03-30 | Sumitomo Mitsubishi Silicon Corp. | Method and device for producing single crystals |
DE10119947A1 (en) * | 2001-04-24 | 2002-10-31 | Crystal Growing Systems Gmbh | Method for controlling a crystal pulling system and crystal pulling system for carrying it out |
DE102020128225A1 (en) * | 2019-10-28 | 2021-04-29 | Pva Tepla Ag | Crystal pulling system |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2821481C2 (en) * | 1978-05-17 | 1985-12-05 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Device for pulling high-purity semiconductor rods from the melt |
JPH0388794A (en) * | 1989-08-31 | 1991-04-15 | Nippon Steel Corp | Method and device for pulling up silicon single crystal |
EP0530397A1 (en) * | 1991-09-04 | 1993-03-10 | Kawasaki Steel Corporation | Czochralski crystal pulling process and an apparatus for carrying out the same |
JPH06293589A (en) * | 1993-04-06 | 1994-10-21 | Kawasaki Steel Corp | Apparatus for growing single crystal |
-
1995
- 1995-10-23 DE DE19539316A patent/DE19539316A1/en active Pending
-
1996
- 1996-08-24 DE DE59601759T patent/DE59601759D1/en not_active Expired - Fee Related
- 1996-09-24 KR KR1019960041961A patent/KR100220118B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE59601759D1 (en) | 1999-06-02 |
KR100220118B1 (en) | 1999-09-01 |
DE19539316A1 (en) | 1997-03-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
LAPS | Lapse due to unpaid annual fee |