KR970013329A - Semi-custom semiconductor device with high capacity capacitor - Google Patents

Semi-custom semiconductor device with high capacity capacitor Download PDF

Info

Publication number
KR970013329A
KR970013329A KR1019950027255A KR19950027255A KR970013329A KR 970013329 A KR970013329 A KR 970013329A KR 1019950027255 A KR1019950027255 A KR 1019950027255A KR 19950027255 A KR19950027255 A KR 19950027255A KR 970013329 A KR970013329 A KR 970013329A
Authority
KR
South Korea
Prior art keywords
regions
array
semiconductor device
capacitor
semi
Prior art date
Application number
KR1019950027255A
Other languages
Korean (ko)
Inventor
김장흥
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950027255A priority Critical patent/KR970013329A/en
Publication of KR970013329A publication Critical patent/KR970013329A/en

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

본 발명은 주문형 반도에 장치에 관한 것으로서, 특히 반도체 칩의 코아부에 내부 셀어레이가 형성되는 코아 어레이영역; 반도체 칩의 엣지부에 입출력셀 얼이 및 본딩 패드가 형성되는 복수의 엣지 어레이 영역들; 및 코아 어레이 영역과 엣지 어레이 영역의 사이의 스페이스영역들 및 반도체 칩의 코너 영역들을 가지는 반주문형 반도체 장치에 있어서, 스페이스영역들과 코너영역들에 형성되고 전원전압 패드와 접지전압 패드 사이에 연결된 대용량 캐피시터를 구비하는 것을 특징으로 한다. 따라서, 본 발명에서는 대용량 캐패시터에 의해 전원전압의 안정화를 도모할 수 있다.The present invention relates to a device on a custom peninsula, particularly a core array region in which an inner cell array is formed in the core of the semiconductor chip; A plurality of edge array regions in which an input / output cell edge and a bonding pad are formed in an edge portion of the semiconductor chip; And a semi-order semiconductor device having space regions between a core array region and an edge array region and corner regions of a semiconductor chip, comprising: a large capacity formed in the space regions and the corner regions and connected between a power supply pad and a ground voltage pad; It is characterized by including a capacitor. Therefore, in the present invention, the power supply voltage can be stabilized by a large capacity capacitor.

Description

대용량 캐패시터를 가진 반주문형 반도체 장치Semi-custom semiconductor device with high capacity capacitor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 의한 대용량 캐패시터를 가진 반주문형 반도체 장치의 레이 아웃 구조를 나타낸 도면.1 is a view showing a layout structure of a semi-custom semiconductor device having a large capacity capacitor according to the present invention.

제2도는 대용량 캐패시터의 구성을 나타낸 도면.2 is a diagram showing the configuration of a large capacity capacitor.

Claims (2)

반도체 칩의 코아부에 내부 셀어레이가 형성되는 코아 어레이영역; 상기 반도체 칩의 엣지부에 입출력셀 어레이 및 본딩 패드가 형성되는 복수의 엣지 어레이 영역들; 및 상기 코아 어레이 영역과 엣지 어레이 영역의 사이의 스페이스영역들 및 반도체 칩의 코너 영역들을 가지는 반 주문형 반도체 장치에 있어서, 상기 스페이스 영역들과 코너영역들에 형성되고 전원전압 패드와 접지전압 패드 사이에 연결된 대용량 캐피시터를 구비하는 것을 특징으로 하는 반 주문형 반도체 장치.A core array region in which an inner cell array is formed in the core of the semiconductor chip; A plurality of edge array regions in which an input / output cell array and a bonding pad are formed at edge portions of the semiconductor chip; And a semi-order type semiconductor device having space regions between the core array region and an edge array region and corner regions of a semiconductor chip, the semiconductor device being formed in the space regions and corner regions and between a power supply pad and a ground voltage pad. A semi-custom semiconductor device having a large capacity capacitor connected thereto. 제1항에 있어서, 상기 대용량 캐패시터는 상기 스페이스영역들과 코너영역들의 반도체 기판의 표면근방에 형성된 확산영역으로 제공되고 상기 접지전압 패드와 연결되는 제1 캐패시터 전극; 상기 어레이 영역들에 형성되는 게이트 절연막과 동일한 절연막으로 상기 제1 전극상에 형성되는 캐패시터 절연막; 및 상기 어레이 영역들에 형성되는 게이트 전극과 동일한 전극물질로 상기 캐패시터 절연막상에 형성되고 상기 전원전압 패드와 연결되는 제2 캐패시터 전극으로 구성된 것을 특징으로 하는 반주문형 반도체 장치.The semiconductor device of claim 1, wherein the large capacity capacitor comprises: a first capacitor electrode provided as a diffusion region formed near a surface of the semiconductor substrate in the space regions and the corner regions and connected to the ground voltage pad; A capacitor insulating film formed on the first electrode with the same insulating film as the gate insulating film formed in the array regions; And a second capacitor electrode formed on the capacitor insulating layer with the same electrode material as the gate electrode formed in the array regions and connected to the power supply voltage pad.
KR1019950027255A 1995-08-29 1995-08-29 Semi-custom semiconductor device with high capacity capacitor KR970013329A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950027255A KR970013329A (en) 1995-08-29 1995-08-29 Semi-custom semiconductor device with high capacity capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950027255A KR970013329A (en) 1995-08-29 1995-08-29 Semi-custom semiconductor device with high capacity capacitor

Publications (1)

Publication Number Publication Date
KR970013329A true KR970013329A (en) 1997-03-29

Family

ID=66596849

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950027255A KR970013329A (en) 1995-08-29 1995-08-29 Semi-custom semiconductor device with high capacity capacitor

Country Status (1)

Country Link
KR (1) KR970013329A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100469911B1 (en) * 1997-12-31 2005-07-07 주식회사 하이닉스반도체 Arrangement of leisure bar capacitors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100469911B1 (en) * 1997-12-31 2005-07-07 주식회사 하이닉스반도체 Arrangement of leisure bar capacitors

Similar Documents

Publication Publication Date Title
EP0154998B1 (en) Improved structure of power supply wirings in semiconductor integrated circuit
KR910020904A (en) Semiconductor memory device and manufacturing method
KR900017162A (en) Semiconductor integrated circuit device
KR950012723A (en) Semiconductor device and manufacturing method
KR960036075A (en) Semiconductor device
KR950002046A (en) Semiconductor integrated circuit device
KR950021666A (en) Semiconductor devices
JP2001217325A5 (en)
KR920018943A (en) Semiconductor memory
KR920010902A (en) Semiconductor device
KR980006220A (en) Semiconductor device with static electricity protection circuit
US6121645A (en) Noise-reducing circuit
KR970067851A (en) Ferromagnetic nonvolatile memory cell and memory cell formation method
KR970013329A (en) Semi-custom semiconductor device with high capacity capacitor
KR910010750A (en) Semiconductor memory
JPH04307969A (en) Semiconductor integrated circuit device
KR900001020A (en) Semiconductor integrated circuit device
KR890002888A (en) Semiconductor integrated circuit device
JPS5850426B2 (en) How to stabilize self-substrate bias level
JP2520473B2 (en) Semiconductor integrated circuit
KR100197568B1 (en) Gate array master slice
JPS62130552A (en) Semiconductor integrated circuit device
JPH0330452A (en) Semiconductor integrated circuit device
JP2001015528A (en) Semiconductor device
JPH0369151A (en) Mos type semiconductor integrated circuit device

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination