KR970010283B1 - Internal voltage generator circuit of semiconductor memory scheme - Google Patents

Internal voltage generator circuit of semiconductor memory scheme Download PDF

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Publication number
KR970010283B1
KR970010283B1 KR93028362A KR930028362A KR970010283B1 KR 970010283 B1 KR970010283 B1 KR 970010283B1 KR 93028362 A KR93028362 A KR 93028362A KR 930028362 A KR930028362 A KR 930028362A KR 970010283 B1 KR970010283 B1 KR 970010283B1
Authority
KR
South Korea
Prior art keywords
internal voltage
semiconductor memory
voltage generator
generator circuit
memory scheme
Prior art date
Application number
KR93028362A
Other languages
Korean (ko)
Other versions
KR950021489A (en
Inventor
Je-Hwan Yu
Jong-Hyun Choe
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority to KR93028362A priority Critical patent/KR970010283B1/en
Publication of KR950021489A publication Critical patent/KR950021489A/en
Application granted granted Critical
Publication of KR970010283B1 publication Critical patent/KR970010283B1/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

Internal voltage generating circuit consists of the internal voltage generating circuit(115) for peripheral circuit(95) to supply the source voltage inputted out of the outside to peripheral circuit(95), and the internal voltage generating circuit(120) for input buffer to generate the internal voltage for input buffer of which voltage clamp region is wider than that of the internal voltage for peripheral circuit and to supply to input buffer(100) respectively.
KR93028362A 1993-12-18 1993-12-18 Internal voltage generator circuit of semiconductor memory scheme KR970010283B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93028362A KR970010283B1 (en) 1993-12-18 1993-12-18 Internal voltage generator circuit of semiconductor memory scheme

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93028362A KR970010283B1 (en) 1993-12-18 1993-12-18 Internal voltage generator circuit of semiconductor memory scheme

Publications (2)

Publication Number Publication Date
KR950021489A KR950021489A (en) 1995-07-26
KR970010283B1 true KR970010283B1 (en) 1997-06-23

Family

ID=19371561

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93028362A KR970010283B1 (en) 1993-12-18 1993-12-18 Internal voltage generator circuit of semiconductor memory scheme

Country Status (1)

Country Link
KR (1) KR970010283B1 (en)

Also Published As

Publication number Publication date
KR950021489A (en) 1995-07-26

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