KR970008328A - Formation method of amorphous silicon thin film with low defect density - Google Patents
Formation method of amorphous silicon thin film with low defect density Download PDFInfo
- Publication number
- KR970008328A KR970008328A KR1019950020644A KR19950020644A KR970008328A KR 970008328 A KR970008328 A KR 970008328A KR 1019950020644 A KR1019950020644 A KR 1019950020644A KR 19950020644 A KR19950020644 A KR 19950020644A KR 970008328 A KR970008328 A KR 970008328A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- amorphous silicon
- silicon thin
- defect density
- forming
- Prior art date
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
CVD(Chemical Vapor Deposition) 방법을 이용하여 낮은 결함(defeat) 밀도를 갖는 비정질실리콘(amorphous silicon) 박막을 형성하는 방법을 개시한다. 본 발명은 반응기(reactor)내의 실란(SiH4) 가스의 화학 반응을 이용하여 웨이퍼 상에 비정질실리콘 박막을 형성하는 방법에 있어서, 상기 성막된 비정질실리콘 박막 표면의 결함밀도를 최소화하기 위하여, 530℃ 이하의 성장 온도 및 40파스칼(Pa) 미만의 성장 압력 조건하에서 공정을 수행함으로써, 불필요한 결함(defect)이나 파티클 (particle)의 전체 갯수를 6inch 웨이퍼를 기준으로 하여 약 50% 이상 감소시킬 수 있는 효과를 발휘한다.Disclosed is a method of forming an amorphous silicon thin film having a low defect density using a chemical vapor deposition (CVD) method. The present invention provides a method for forming an amorphous silicon thin film on a wafer using a chemical reaction of silane (SiH 4 ) gas in a reactor, in order to minimize the defect density on the surface of the deposited amorphous silicon thin film, 530 ° C. By carrying out the process under the following growth temperature and growth pressure of less than 40 Pascal, the total number of unnecessary defects or particles can be reduced by about 50% or more based on 6-inch wafers. Exert.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 본 발명의 바람직한 실시예에 의해 성막된 비정질실리콘 박막의 결함밀도와 성장 압력에 대한 의존성을 나타낸 그래프.1 is a graph showing the dependence on the defect density and the growth pressure of the amorphous silicon thin film deposited by the preferred embodiment of the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950020644A KR970008328A (en) | 1995-07-13 | 1995-07-13 | Formation method of amorphous silicon thin film with low defect density |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950020644A KR970008328A (en) | 1995-07-13 | 1995-07-13 | Formation method of amorphous silicon thin film with low defect density |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970008328A true KR970008328A (en) | 1997-02-24 |
Family
ID=66526821
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950020644A KR970008328A (en) | 1995-07-13 | 1995-07-13 | Formation method of amorphous silicon thin film with low defect density |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970008328A (en) |
-
1995
- 1995-07-13 KR KR1019950020644A patent/KR970008328A/en not_active Application Discontinuation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5465680A (en) | Method of forming crystalline silicon carbide coatings | |
US7674335B2 (en) | Method of producing high quality relaxed silicon germanium layers | |
EP0030638B2 (en) | Method for depositing silicon or germanium containing films | |
US5695819A (en) | Method of enhancing step coverage of polysilicon deposits | |
KR910015011A (en) | Method of forming metal or metal silicide film | |
KR910007089A (en) | Cleaning Method for Semiconductor Wafer Processing Equipment | |
EP0394665A1 (en) | Selective deposition of amorphous and polycrystalline silicon | |
US5482749A (en) | Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein | |
US5510297A (en) | Process for uniform deposition of tungsten silicide on semiconductor wafers by treatment of susceptor having aluminum nitride surface thereon with tungsten silicide after cleaning of susceptor | |
GB1346938A (en) | Reactors and method of manufacture of semiconductor devices using such a reactor | |
KR950703073A (en) | MOLYBDENUM ENHANCED LOW TEMPERATURE DEPOSITION OF CRYSTALLINE SILICON NITRIDE OF CRYSTALLINE SILICON | |
KR950009904A (en) | Method for producing polycrystalline silicon thin film with large particle size | |
KR930001304A (en) | Epitaxy-coated semiconductor wafer with low oxygen range with adjustable range, and method of manufacturing the same | |
US5082696A (en) | Method of forming semiconducting amorphous silicon films from the thermal decomposition of dihalosilanes | |
WO2001022482A9 (en) | Method of producing relaxed silicon germanium layers | |
EP0648860B1 (en) | Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein | |
KR970008328A (en) | Formation method of amorphous silicon thin film with low defect density | |
Sedgwick et al. | Atmospheric pressure chemical vapor deposition of Si and SiGe at low temperatures | |
US5013690A (en) | Method for deposition of silicon films from azidosilane sources | |
AU610153B2 (en) | Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes | |
JPH05226254A (en) | Ge application method and semiconductor structure | |
US5154773A (en) | Vapor phase epitaxial growth apparatus having exhaust unit for removing unwanted deposit | |
CA2182245A1 (en) | Process for Depositing Adherent Diamond Thin Films | |
Ohshita | Low temperature and selective growth of β‐SiC using the SiH2Cl2/i‐C4H10/HCl/H2 gas system | |
CA1335950C (en) | Method of forming semiconducting amorphous silicon films from the thermal decomposition of dihalosilanes |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
WITB | Written withdrawal of application |