KR970008328A - Formation method of amorphous silicon thin film with low defect density - Google Patents

Formation method of amorphous silicon thin film with low defect density Download PDF

Info

Publication number
KR970008328A
KR970008328A KR1019950020644A KR19950020644A KR970008328A KR 970008328 A KR970008328 A KR 970008328A KR 1019950020644 A KR1019950020644 A KR 1019950020644A KR 19950020644 A KR19950020644 A KR 19950020644A KR 970008328 A KR970008328 A KR 970008328A
Authority
KR
South Korea
Prior art keywords
thin film
amorphous silicon
silicon thin
defect density
forming
Prior art date
Application number
KR1019950020644A
Other languages
Korean (ko)
Inventor
이상민
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950020644A priority Critical patent/KR970008328A/en
Publication of KR970008328A publication Critical patent/KR970008328A/en

Links

Landscapes

  • Chemical Vapour Deposition (AREA)

Abstract

CVD(Chemical Vapor Deposition) 방법을 이용하여 낮은 결함(defeat) 밀도를 갖는 비정질실리콘(amorphous silicon) 박막을 형성하는 방법을 개시한다. 본 발명은 반응기(reactor)내의 실란(SiH4) 가스의 화학 반응을 이용하여 웨이퍼 상에 비정질실리콘 박막을 형성하는 방법에 있어서, 상기 성막된 비정질실리콘 박막 표면의 결함밀도를 최소화하기 위하여, 530℃ 이하의 성장 온도 및 40파스칼(Pa) 미만의 성장 압력 조건하에서 공정을 수행함으로써, 불필요한 결함(defect)이나 파티클 (particle)의 전체 갯수를 6inch 웨이퍼를 기준으로 하여 약 50% 이상 감소시킬 수 있는 효과를 발휘한다.Disclosed is a method of forming an amorphous silicon thin film having a low defect density using a chemical vapor deposition (CVD) method. The present invention provides a method for forming an amorphous silicon thin film on a wafer using a chemical reaction of silane (SiH 4 ) gas in a reactor, in order to minimize the defect density on the surface of the deposited amorphous silicon thin film, 530 ° C. By carrying out the process under the following growth temperature and growth pressure of less than 40 Pascal, the total number of unnecessary defects or particles can be reduced by about 50% or more based on 6-inch wafers. Exert.

Description

낮은 결함밀도를 갖는 비정질실리콘 박막의 형성방법Formation method of amorphous silicon thin film with low defect density

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 바람직한 실시예에 의해 성막된 비정질실리콘 박막의 결함밀도와 성장 압력에 대한 의존성을 나타낸 그래프.1 is a graph showing the dependence on the defect density and the growth pressure of the amorphous silicon thin film deposited by the preferred embodiment of the present invention.

Claims (3)

반응기(reactor)내의 실란(SiH4) 가스의 화학 반응을 이용하여 웨이퍼 상에 비정질실리콘 박막을 형성하는 방법에 있어서, 상기 성막된 비정질실리콘 박막 표면의 결함밀도를 최소화하기 위하여, 530℃ 이하의 성장 온도 및 40파스칼(Pa) 미만의 성장 압력 조건하에서 공정을 수행하는 것을 특징으로 하는 비정질실리콘 박막의 형성방법.A method of forming an amorphous silicon thin film on a wafer by using a chemical reaction of silane (SiH 4 ) gas in a reactor, in order to minimize the defect density on the surface of the deposited amorphous silicon thin film, growth of not more than 530 ° C. A process for forming an amorphous silicon thin film, characterized in that the process is carried out under temperature and growth pressure conditions of less than 40 Pascals (Pa). 제1항에 있어서, 상기 실란가스 대신에 SiH3Cl, SiH2Cl2, SiHCl3및 Si2H6가운데 적어도 어느 하나의 반응 기체를 사용하는 것을 특징으로 하는 비정질실리콘 박막의 형성방법.The method of claim 1, wherein at least one reaction gas of SiH 3 Cl, SiH 2 Cl 2 , SiHCl 3, and Si 2 H 6 is used in place of the silane gas. 제1항에 있어서, 상기 반응기내에 운반 기체로서 질소(N2) 및 아르곤(Ar) 가스중의 어느 하나를 사용하는 것을 특징으로 하는 비정질실리콘 박막의 형성방법.The method of forming an amorphous silicon thin film according to claim 1, wherein any one of nitrogen (N 2 ) and argon (Ar) gas is used as a carrier gas in the reactor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950020644A 1995-07-13 1995-07-13 Formation method of amorphous silicon thin film with low defect density KR970008328A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950020644A KR970008328A (en) 1995-07-13 1995-07-13 Formation method of amorphous silicon thin film with low defect density

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950020644A KR970008328A (en) 1995-07-13 1995-07-13 Formation method of amorphous silicon thin film with low defect density

Publications (1)

Publication Number Publication Date
KR970008328A true KR970008328A (en) 1997-02-24

Family

ID=66526821

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950020644A KR970008328A (en) 1995-07-13 1995-07-13 Formation method of amorphous silicon thin film with low defect density

Country Status (1)

Country Link
KR (1) KR970008328A (en)

Similar Documents

Publication Publication Date Title
US5465680A (en) Method of forming crystalline silicon carbide coatings
US7674335B2 (en) Method of producing high quality relaxed silicon germanium layers
EP0030638B2 (en) Method for depositing silicon or germanium containing films
US5695819A (en) Method of enhancing step coverage of polysilicon deposits
KR910015011A (en) Method of forming metal or metal silicide film
KR910007089A (en) Cleaning Method for Semiconductor Wafer Processing Equipment
EP0394665A1 (en) Selective deposition of amorphous and polycrystalline silicon
US5482749A (en) Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein
US5510297A (en) Process for uniform deposition of tungsten silicide on semiconductor wafers by treatment of susceptor having aluminum nitride surface thereon with tungsten silicide after cleaning of susceptor
GB1346938A (en) Reactors and method of manufacture of semiconductor devices using such a reactor
KR950703073A (en) MOLYBDENUM ENHANCED LOW TEMPERATURE DEPOSITION OF CRYSTALLINE SILICON NITRIDE OF CRYSTALLINE SILICON
KR950009904A (en) Method for producing polycrystalline silicon thin film with large particle size
KR930001304A (en) Epitaxy-coated semiconductor wafer with low oxygen range with adjustable range, and method of manufacturing the same
US5082696A (en) Method of forming semiconducting amorphous silicon films from the thermal decomposition of dihalosilanes
WO2001022482A9 (en) Method of producing relaxed silicon germanium layers
EP0648860B1 (en) Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein
KR970008328A (en) Formation method of amorphous silicon thin film with low defect density
Sedgwick et al. Atmospheric pressure chemical vapor deposition of Si and SiGe at low temperatures
US5013690A (en) Method for deposition of silicon films from azidosilane sources
AU610153B2 (en) Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes
JPH05226254A (en) Ge application method and semiconductor structure
US5154773A (en) Vapor phase epitaxial growth apparatus having exhaust unit for removing unwanted deposit
CA2182245A1 (en) Process for Depositing Adherent Diamond Thin Films
Ohshita Low temperature and selective growth of β‐SiC using the SiH2Cl2/i‐C4H10/HCl/H2 gas system
CA1335950C (en) Method of forming semiconducting amorphous silicon films from the thermal decomposition of dihalosilanes

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
WITB Written withdrawal of application