KR970007868B1 - Terminal of oscillator - Google Patents
Terminal of oscillator Download PDFInfo
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- KR970007868B1 KR970007868B1 KR1019940028967A KR19940028967A KR970007868B1 KR 970007868 B1 KR970007868 B1 KR 970007868B1 KR 1019940028967 A KR1019940028967 A KR 1019940028967A KR 19940028967 A KR19940028967 A KR 19940028967A KR 970007868 B1 KR970007868 B1 KR 970007868B1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/16—Multiple-frequency-changing
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- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Power Engineering (AREA)
- Superheterodyne Receivers (AREA)
- Transmitters (AREA)
Abstract
Description
제 1 도는 본 발명에 의한 접속장치의 회로 구성도이며, 표 1은 본 발명에 각 대역별 나타나는 주파수 도표.1 is a circuit configuration diagram of a connection device according to the present invention, Table 1 is a frequency diagram appearing for each band in the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
10 : 광대역 안테나11 : 주파수 혼합기10 wideband antenna 11: frequency mixer
12 : 저역 통과 필터(LPF)13,14,15 : 제 1 내지 제 3 국부발진부12 low pass filter (LPF) 13, 14, 15: first to third local oscillator
131,141,151 : 대역저지필터(BSF)131,141,151: Bandstop Filter (BSF)
132,142,152 : 반도체 소자133,143,153 : 발진소자132, 142, 152: semiconductor device 133, 143, 153: oscillation device
134,144,154 : 유전체공진기135,145,155 : 저항134,144,154 Dielectric Resonator 135,145,155 Resistance
본 발명은 다수개의 국부 발진기 접속장치에 관한 것으로 특히 대역 저지필터(Band Stop Filter)를 사용하여 초고주파 신호 검출방식에 사용되는 다수개의 국부발진기 접속시 국부발진기 상호간의 간섭 영향을 최소화하기 위한 것이다.The present invention relates to a plurality of local oscillator connection devices, in particular, to minimize the influence of interference between the local oscillators when connecting a plurality of local oscillators used in the microwave signal detection method using a band stop filter.
종래에는 다수개의 국부발진기를 접속함에 있어 대역통과필터(Band pass Filter)를 사용하는 방식과 국부발진기 상호영향을 고려하여 접속하는 방식으로 대분된다.Conventionally, in connecting a plurality of local oscillators, a band pass filter and a local oscillator are considered.
전자의 경우는 국부발진기의 출력단에 대역 통과 필터를 사용하여 발진 주파수에서는 정합이 되고 다른 국부발진 주파수에는 개방특성을 갖도록 하여 상호간섭 영향을 최소화하고 있다.In the former case, a bandpass filter is used at the output of the local oscillator to minimize the interference effect by matching at the oscillation frequency and having an open characteristic at other local oscillation frequencies.
후자의 경우는 국부발진기 설계시에 발진기 각각의 정합을 위한 것이기 보다는 접속된 다수개의 국부발진기의 정합을 고려한 것이다.In the latter case, the design of the local oscillator takes into account the matching of multiple connected local oscillators, rather than for matching each of the oscillators.
그러나 종래기술상 전자의 경우는 대역 통과 필터의 구조상 국부발진기가 3개이상일때에는 접속이 용이하지 못한 문제점이 있고, 후자의 경우는 국부발진기에 사용되는 반도체 소자의 특성 변화 및 외부 임피던스 변화에 따라 발진기의 발진주파수와 출력 전력의 변화가 발생하여 접속시 국부발진기간의 상호간섭 영향을 받게 되는 문제점이 있었다.However, in the former case, the former has a problem in that the connection is not easy when there are three or more local oscillators due to the structure of the band pass filter. In the latter case, the oscillator is changed according to the characteristic change and external impedance of the semiconductor element used in the local oscillator. There was a problem in that the oscillation frequency and the output power were changed, and thus the interference caused by the local oscillation period was affected.
본 발명은 이러한 종래기술의 제반문제점을 해소코자하여 이루어진 것으로서, 대역저지필터를 사용하여 초고주파 신호 검출 방식에 사용되는 다수개의 국부발진기 접속시 국부발진기 상호간의 간섭 영향을 최소화함으로써 제품성능이 향상 및 접속을 용이하게 함을 그 목적으로 하는 것이다.The present invention has been made to solve the above problems of the prior art, by using a band stop filter to minimize the interference effect between the local oscillator when connecting a plurality of local oscillators used in the ultra-high frequency signal detection method to improve the product performance and connection It is intended to facilitate the purpose.
상기한 목적을 달성하기 위한 본 발명을 첨부된 도면에 의하여 상세히 설명하면 다음과 같다.DETAILED DESCRIPTION OF THE INVENTION The present invention for achieving the above object will be described in detail with reference to the accompanying drawings.
제 1 도는 본 발명에 의한 접속장치의 회로구성도를 나타낸 것으로서, 이는 X대역, K대역, KA대역 신호가 입력되는 광대역 안테나(10)와, 상기 광대역 안테나(10)신호와 다수개의 국부발진부(13,14,15)의 신호를 혼합하여 중간주파수를 발생시키는 주파수 혼합기(11)와, 상기 중간주파수에서 소정 저역 주파수만을 통과시키는 저역통과필터(12)와, 각각 상이한 소정의 발진주파수를 갖는 동시에 선택적으로 하나만이 온 상태로 동작되는 다수개의 국부발진부(13,14,15)를 포함하는 구성으로 되어져 있다.1 is a circuit diagram of a connection apparatus according to the present invention, which is a broadband antenna 10 to which X, K, and KA band signals are input, and the broadband antenna 10 signal and a plurality of local oscillation units ( A frequency mixer 11 for mixing the signals of 13, 14, and 15 to generate an intermediate frequency, a low pass filter 12 for passing only a predetermined low frequency at the intermediate frequency, and having different predetermined oscillation frequencies Optionally, it is configured to include a plurality of local oscillation parts 13, 14, and 15 which are operated in an ON state only.
또한 상기한 다수개의 국부발진부(13,14,15)는 각각 일정 주파수 통과를 저지하는 대역 저지필터(131,141,151)와, 발진소자(133,143,153)와 LC공진을 행하는 유전체 공진기(134,144,154)의 출력 상태에 따라 온, 오프 스위칭 되는 반도체 소자(132,142,152)와, 선로의 안정화를 위한 저항(135,145,155)으로 각각 구성되어져 있다.In addition, the plurality of local oscillators 13, 14, and 15 are respectively configured to suppress band pass filters 131, 141, and 151 for preventing the passage of a predetermined frequency, and output conditions of the dielectric resonators 134, 144, and 154 for performing LC resonance with the oscillation elements 133, 143, 153. The semiconductor devices 132, 142, and 152 that are switched on and off, and resistors 135, 145, and 155 for stabilizing the lines, respectively.
또한 상기한 제 1 국부발진부(13)는 11.5580GHz의 발진주파수를 갖고, 제 2 국부발진부(14)는 16.6335GHz의 발진주파수를 가지며, 제 3 국진발진부(15)는 17.2165GHz를 갖는다.In addition, the first local oscillator 13 has an oscillation frequency of 11.5580 GHz, the second local oscillator 14 has an oscillation frequency of 16.6335 GHz, and the third local oscillator 15 has 17.2165 GHz.
이와 같이 구성된 본 발명의 동작 및 작용효과를 표 1을 참조하여 설명하면 다음과 같다.When described with reference to Table 1 the operation and effect of the present invention configured as described above.
먼저 표 1에 나타낸 바와 같이 광대역 안테나(10)에 수신된 X대역, K대역, KA대역별 각각의 입력 주파수와 다수개의 국부발진부(13,14,15)에서 발생된 각각의 발진주파수를 주파수 혼합기(11)을 통하여 혼합하면 표 1에서와 같은 중간주파수를 얻게 된다.First, as shown in Table 1, each of the input frequencies for each of the X, K, and KA bands received by the wideband antenna 10 and the respective oscillation frequencies generated by the plurality of local oscillators 13, 14, and 15 are frequency mixers. Mixing through (11) gives an intermediate frequency as shown in Table 1.
[표 1]TABLE 1
상기한 국부발진부(13,14,15)의 발진주파수는 유전체 공진기(134,144,154)의 중심에서 선로사이의 간격(G1,G2,G3)과 반도체소자(132,142,152)와의 거리(L1,L2,L3)에 의해 11.5580GHz, 16.6335GHz 및 17.2165GHz가 결정된다.The oscillation frequency of the local oscillator 13, 14, 15 is the distance (L1, L2, L3) between the distance (G1, G2, G3) and the semiconductor elements (132, 142, 152) between the lines at the center of the dielectric resonator (134, 144, 154) 11.5580 GHz, 16.6335 GHz, and 17.2165 GHz are determined.
여기서, 발진주파수가 11.5580GHz인 국부발진부(13)의 출력단에 6.6335GHz 및 17.2165GHz 대역저지필터(131)를 사용하여 B점의 반사계수(「S22,1)가 발진주파수에서는 정합 또는 저임피던스가 되도록 하고 16.6335GHz, 17.2165GHz에서는 개방 또는 고임피던스가 되도록 한다.Here, using the 6.6335 GHz and 17.2165 GHz band stop filter 131 at the output terminal of the local oscillation unit 13 having an oscillation frequency of 11.5580 GHz, the reflection coefficient of the point B (S22, 1) is matched or low impedance at the oscillation frequency. And at 16.6335 GHz and 17.2165 GHz to be open or high impedance.
이와 마찬가지로 발진주파수가 16.6335GHz인 제 2 발진국부(14)의 출력단에 11.5580GHz 및 17.2165GHz 대역저지필터(141)를 사용하여 C점의 반사계수(「S22,2)가 발진주파수에서는 정합 또는 저임피던스가 되도록 하고, 11.5580GHz, 17.2165GHz에서는 개방 또는 고임피던스가 되도록 한다.Similarly, using the 11.5580 GHz and 17.2165 GHz band-stop filters 141 at the output terminal of the second oscillation station 14 having an oscillation frequency of 16.6335 GHz, the reflection coefficient of point C (`` S22, 2) is matched or low impedance at the oscillation frequency. At 11.5580 GHz and 17.2165 GHz, open or high impedance is required.
또한 D점에서 17.2165GHz는 정합 또는 저임피던스가 되도록 하고, 11.5580GHz, 16.6335GHz에서는 개방 또는 고임피던스가 되도록 한다.In addition, at point D, 17.2165 GHz is matched or low impedance, and at 11.5580 GHz and 16.6335 GHz, it is either open or high impedance.
이와 같이 동작되는 국부발진부(13,14,15)들은 그중 하나만 선택적으로 온 상태가 되므로 11.5580GHz인 제 1 국부발진부(13)가 동작 될때 16.6335GHz인 제 2 국부발진부(14) 및 17.2165GHz인 제 3 국부발진부(15)는 오프상태가 된다.The local oscillators 13, 14, and 15 operated in this way are selectively turned on, so that when the first local oscillator 13, which is 11.5580 GHz, is operated, the second local oscillator 14 and 17.2165 GHz which are 16.6335 GHz are operated. 3 The local oscillation unit 15 is turned off.
따라서 접속시에 A점과 C점 거리인 L5와 A점과 D점 거리인 L6을 조절하여 A점에서 C점, D점으로 바라본 반사 계수 (「AC), (「AD)가 개방 임피던스 또는 고임피던스가 되도록 하면 11.5580GHz인 제 1 국부발진부(13)의 전력이 A점에서 C점과 D점으로 누설되지 않으며, 오프상태인 반도체 소자와 출력 임피던스 변화에 의한 발진주파수 변화가 적으므로 회로적으로 안전상태가 된다.Therefore, when connecting, adjust L5, which is the distance between A and C points, and L6, which is the distance between A and D points, so that the reflection coefficients (`` AC) and (`` AD) viewed from point A to point C and D are open impedance or high When the impedance is set to 11.5580 GHz, the power of the first local oscillation unit 13 does not leak from point A to point C and point D, and the oscillation frequency change due to the change of the output element and the output impedance of the off state is small. It is a safe state.
또한 국부발진부의 누설전력이 없으므로 주파수혼합기(11)에 최대의 국부발진 전력을 전달할 수가 있다.In addition, since there is no leakage power of the local oscillation unit, it is possible to transfer the maximum local oscillation power to the frequency mixer 11.
이와 같이 하여 16.6335GHz와 17.2165GHz의 제 2 및 제 3 국부발진부(14, 15)가 온상태가 되더라도 같은 효과를 얻을수가 있다.In this manner, the same effects can be obtained even when the second and third local oscillation units 14 and 15 of 16.6335 GHz and 17.2165 GHz are turned on.
이상에서와 같이 본 발명은 대역 저지 필터를 사용하여 초고주파 신호 검출방식에 사용되는 다수개의 국부발진기 접속시에 국부발진기 상호간의 간섭영향을 최소화 할수가 있는 것이어서 기존제품에 비하여 접속이 용이할뿐만 아니라 제품의 성능향상을 도모할 수 있는 효과가 있는 것이다.As described above, the present invention can minimize the interference effect between the local oscillators when connecting a plurality of local oscillators used in the ultra-high frequency signal detection method using a band stop filter. The effect is to improve the performance of.
Claims (5)
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KR1019940028967A KR970007868B1 (en) | 1994-11-05 | 1994-11-05 | Terminal of oscillator |
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KR1019940028967A KR970007868B1 (en) | 1994-11-05 | 1994-11-05 | Terminal of oscillator |
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KR960019956A KR960019956A (en) | 1996-06-17 |
KR970007868B1 true KR970007868B1 (en) | 1997-05-17 |
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KR1019940028967A KR970007868B1 (en) | 1994-11-05 | 1994-11-05 | Terminal of oscillator |
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