KR970007789B1 - Micropattern formation of semiconductor elements - Google Patents
Micropattern formation of semiconductor elements Download PDFInfo
- Publication number
- KR970007789B1 KR970007789B1 KR93026879A KR930026879A KR970007789B1 KR 970007789 B1 KR970007789 B1 KR 970007789B1 KR 93026879 A KR93026879 A KR 93026879A KR 930026879 A KR930026879 A KR 930026879A KR 970007789 B1 KR970007789 B1 KR 970007789B1
- Authority
- KR
- South Korea
- Prior art keywords
- vibration
- detecter
- semiconductor elements
- engine
- vibration sensor
- Prior art date
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- Control Of Transmission Device (AREA)
Abstract
An auxiliary gear transmission apparatus and method having a vibration sensor(32) measuring the vibration of an engine(23); an amplifier(34) amplifying the signal measured from a vibration sensor(32); a detecter(36) detecting the exploding element of the engine(28) by using the amplified signal; and a ECU(14) moving an electronic gear shift unit(24) in case that the detected value from the detecter(36) isn't in the prescribed range is disclosed. Thereby, it is possible to automatically shift gear in running on inclined road, and also to reduce noise and vibration due to torque change.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR93026879A KR970007789B1 (en) | 1993-12-08 | 1993-12-08 | Micropattern formation of semiconductor elements |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR93026879A KR970007789B1 (en) | 1993-12-08 | 1993-12-08 | Micropattern formation of semiconductor elements |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970007789B1 true KR970007789B1 (en) | 1997-05-16 |
Family
ID=19370247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR93026879A KR970007789B1 (en) | 1993-12-08 | 1993-12-08 | Micropattern formation of semiconductor elements |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970007789B1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100704470B1 (en) * | 2004-07-29 | 2007-04-10 | 주식회사 하이닉스반도체 | Method for fabrication of semiconductor device using amorphous carbon layer to sacrificial hard mask |
KR100838394B1 (en) * | 2007-01-03 | 2008-06-13 | 주식회사 하이닉스반도체 | Method for etching in semiconductor device using hardmask layer |
-
1993
- 1993-12-08 KR KR93026879A patent/KR970007789B1/en not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100704470B1 (en) * | 2004-07-29 | 2007-04-10 | 주식회사 하이닉스반도체 | Method for fabrication of semiconductor device using amorphous carbon layer to sacrificial hard mask |
KR100838394B1 (en) * | 2007-01-03 | 2008-06-13 | 주식회사 하이닉스반도체 | Method for etching in semiconductor device using hardmask layer |
US7807574B2 (en) | 2007-01-03 | 2010-10-05 | Hynix Semiconductor Inc. | Etching method using hard mask in semiconductor device |
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Payment date: 20100726 Year of fee payment: 14 |
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