KR970007789B1 - Micropattern formation of semiconductor elements - Google Patents

Micropattern formation of semiconductor elements Download PDF

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Publication number
KR970007789B1
KR970007789B1 KR93026879A KR930026879A KR970007789B1 KR 970007789 B1 KR970007789 B1 KR 970007789B1 KR 93026879 A KR93026879 A KR 93026879A KR 930026879 A KR930026879 A KR 930026879A KR 970007789 B1 KR970007789 B1 KR 970007789B1
Authority
KR
South Korea
Prior art keywords
vibration
detecter
semiconductor elements
engine
vibration sensor
Prior art date
Application number
KR93026879A
Other languages
Korean (ko)
Inventor
Seung-Chan Moon
Original Assignee
Hynudai Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynudai Electronics Co filed Critical Hynudai Electronics Co
Priority to KR93026879A priority Critical patent/KR970007789B1/en
Application granted granted Critical
Publication of KR970007789B1 publication Critical patent/KR970007789B1/en

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Abstract

An auxiliary gear transmission apparatus and method having a vibration sensor(32) measuring the vibration of an engine(23); an amplifier(34) amplifying the signal measured from a vibration sensor(32); a detecter(36) detecting the exploding element of the engine(28) by using the amplified signal; and a ECU(14) moving an electronic gear shift unit(24) in case that the detected value from the detecter(36) isn't in the prescribed range is disclosed. Thereby, it is possible to automatically shift gear in running on inclined road, and also to reduce noise and vibration due to torque change.
KR93026879A 1993-12-08 1993-12-08 Micropattern formation of semiconductor elements KR970007789B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93026879A KR970007789B1 (en) 1993-12-08 1993-12-08 Micropattern formation of semiconductor elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93026879A KR970007789B1 (en) 1993-12-08 1993-12-08 Micropattern formation of semiconductor elements

Publications (1)

Publication Number Publication Date
KR970007789B1 true KR970007789B1 (en) 1997-05-16

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ID=19370247

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93026879A KR970007789B1 (en) 1993-12-08 1993-12-08 Micropattern formation of semiconductor elements

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KR (1) KR970007789B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100704470B1 (en) * 2004-07-29 2007-04-10 주식회사 하이닉스반도체 Method for fabrication of semiconductor device using amorphous carbon layer to sacrificial hard mask
KR100838394B1 (en) * 2007-01-03 2008-06-13 주식회사 하이닉스반도체 Method for etching in semiconductor device using hardmask layer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100704470B1 (en) * 2004-07-29 2007-04-10 주식회사 하이닉스반도체 Method for fabrication of semiconductor device using amorphous carbon layer to sacrificial hard mask
KR100838394B1 (en) * 2007-01-03 2008-06-13 주식회사 하이닉스반도체 Method for etching in semiconductor device using hardmask layer
US7807574B2 (en) 2007-01-03 2010-10-05 Hynix Semiconductor Inc. Etching method using hard mask in semiconductor device

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