KR970006621B1 - Method of manufacturing semiconductor magnetic compound of bati03 systems - Google Patents

Method of manufacturing semiconductor magnetic compound of bati03 systems Download PDF

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KR970006621B1
KR970006621B1 KR1019880015518A KR880015518A KR970006621B1 KR 970006621 B1 KR970006621 B1 KR 970006621B1 KR 1019880015518 A KR1019880015518 A KR 1019880015518A KR 880015518 A KR880015518 A KR 880015518A KR 970006621 B1 KR970006621 B1 KR 970006621B1
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temperature
semiconductor magnetic
mol
cooling
barium titanate
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KR900008711A (en
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이원혁
이상협
최종희
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삼성코닝 주식회사
한형수
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Abstract

A fabrication method of BaTiO3 semiconductor magnetic composite using a powder by coprecipitation method of chloride is disclosed. The method comprises the steps of: deformation processing a powder of BaTiO3 semiconductor magnetic composite by coprecipitation method at the temperature of 1200-1250 deg. C , for the time of 0.5-1 hours; and cooling the powder by the temperature of 800 deg. C , in 1 deg. C - 3 deg. C per minute. Thereby, it is possible to easily form the BaTiO3 semiconductor magnetic composite having high quality.

Description

티탄산 바륨계 반도체 자기조성물의 제조방법Method for manufacturing barium titanate-based semiconductor magnetic composition

제1도는 본 발명의 소성과정에서의 온도변화도.1 is a temperature change in the firing process of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 승온과정 2 : 최고온도유지과정1: Temperature rising process 2: Maximum temperature keeping process

3,5 : 냉각과정 4 : 냉각증유지과정3,5 cooling process 4: cooling increase process

본 발명은 티탄산 바륨계 반도체 자기조성물의 제조방법에 관한 것이다.The present invention relates to a method for producing a barium titanate-based semiconductor magnetic composition.

종래부터 BATiO3또는 그 고용체의 희토류 원소를 미량첨가해서 소성하면 정(正)의 저항온도계수를 갖는 반도체 자기조성물을 얻을 수 있다.Conventionally, when a small amount of rare earth element of BATiO 3 or its solid solution is added and calcined, a semiconductor magnetic composition having a positive resistance temperature coefficient can be obtained.

이와 같은 정특성 써미스터(Thermistor)를 전류제한소자로서 이용하는 경우에는 저항온도계수가 크고, 저항증가 구배가 급벽하며, 상온비저항값이 작고, 전압의 존성이 작은것이 요망된다.When such a static thermistor is used as the current limiting device, it is desired that the resistance temperature coefficient is large, the resistance increase gradient is steep, the room temperature specific resistance is small, and the voltage dependency is small.

티탄산 바륨계 정특성 써미스터 재료에 Mn의 산화물을 첨가하는 것에 의해 저항온도계수를 현저하게 향상시키는 것은 이미 공지되어 있다.It is already known to significantly improve the resistance temperature coefficient by adding Mn oxide to barium titanate-based thermistor materials.

또한, Mn을 입계층에 석출시켜 저항값의 저하 및 저항값 증가 특성의 향상을 도모하기 위해 Al2O3, SiO2, TiO2, Li2CO3등을 첨가하는 것도 일반적이다.It is also common to add Al 2 O 3 , SiO 2 , TiO 2 , Li 2 CO 3, etc. in order to precipitate Mn in the grain boundary layer and to lower the resistance value and improve the resistance value increasing characteristics.

또한, 소결체의 입경이 큰만큼 저항값은 작아지지만, 전압 의존성은 커지기 때문에 전압 의존성을 낮추기 위해 CaCO3, Sb2O3등을 첨가시켜 입계성장을 억제시킬 수 있다.In addition, the larger the particle size of the sintered body, the smaller the resistance value, but the greater the voltage dependence, so that the grain boundary growth can be suppressed by adding CaCO 3 , Sb 2 O 3, or the like to lower the voltage dependency.

따라서, 상기 성분들을 적당히 조합하면 우수한 특성의 전류 제한소자를 제조할 수가 있다. 그러나 상기 성분들이 모두 고체상태의 산화물이고, 첨가되는 원소들이 미량이기 때문에 균일 혼합을 위해 20시간 이상의 장시간 혼합을 해야하며, 혼합시에 분순물의 혼입등의 문제가 있고, 소성온도가 1300∼1400℃의 높은온도로 요구된다.Therefore, by combining the above components properly, it is possible to produce a current limiting device of excellent characteristics. However, all of the above components are solid oxides, and since the added elements are very small, the mixture should be mixed for a long time of 20 hours or more for uniform mixing, and there is a problem such as mixing of impurities in mixing, and the firing temperature is 1300 to 1400 ° C. Required at high temperatures.

이러한 점에서 개선키 위하여 출발원료로서 고체상태의 산화물이 아닌 액체상태의 염화물을 사용하고 짧은 혼합시간과 낮은 소성온도로 정특성 반도체자기를 제조할 수 있는 티탄산 바륨을 제조하는 방법이 제시되고 있으나, 이 방법에서는 고성능 정특성 반도체자기를 얻기 위한 소성온도에 대한 내용이 언급되어 있지 않다.In order to improve in this regard, a method of producing barium titanate, which uses a solid chloride rather than a solid oxide as a starting material and can produce static semiconductor magnets with a short mixing time and a low firing temperature, has been proposed. In this method, there is no mention of the firing temperature for obtaining high-performance static semiconductor magnetism.

따라서, 본 발명은 고성능 정특성 반도체자기를 제조하기 위해 상기와 같은 염화물을 사용하여 만든 분말을 이용하여 소성과정중 최고 유지온도 및 냉각조건을 변화시킴으로써 고성능 전류제한용 정특성 써미스터를 제조할 수 있는 방법을 제공하는 것을 목적으로 한다.Therefore, the present invention can manufacture a high-performance current limiting static thermistor by changing the maximum holding temperature and cooling conditions during the firing process using a powder made by using the chloride as described above to manufacture a high-performance static semiconductor magnetic. It is an object to provide a method.

상기 목적을 달성하고자 본 발명의 제조방법은 염화물의 공침법에 의한 분말을 사용한 티탄산 바륨계 반도체자기조성물의 제조방법에 있어서, 소성과정중 최고 유지온도를 1200℃∼1250℃, 유지시간을 0.5∼1시간으로 하고, 냉각단계에서 800℃까지 1℃∼3℃/분으로 냉각하면서 1050℃∼1150℃의 온도범위에서 1∼2시간 유지시키는 것으로 구성된다.In order to achieve the above object, the production method of the present invention is a method for producing a barium titanate-based semiconductor magnetic composition using powder by the coprecipitation method of chloride, wherein the maximum holding temperature is 1200 ° C to 1250 ° C and the holding time is 0.5 to It is set as 1 hour, and it is hold | maintained for 1-2 hours in the temperature range of 1050 degreeC-1150 degreeC, cooling to 800 degreeC at 1 degreeC-3 degreeC / min in a cooling stage.

이하에서 본 발명의 티탄산 바륨계 반도체자기조성물의 제조방법을 구체적으로 설명한다.Hereinafter, a method of manufacturing the barium titanate-based semiconductor magnetic composition of the present invention will be described in detail.

염화바륨(BaCl2) 96mol, 사염화탄소(TiCl4) 101mol, CaCl24mol, YCl30.11mol, AlCl30.2mol, SiCl40.5mol, LiCl 0.2mol, SbOCl 0.06mol, MnCl20.08mol를 실온에서 약 30분간 혼합후 공침제로 2.0∼3.0mol 미량의 C2H2O42H2O 용액을 투입, 중간체인 혼합 바륨티타닐 옥살레이트를 제조하고, 생성된 중간체를 30분∼1시간 동안 실온에서 반응시킨후 진공여과하고, 약 3회∼5회 수세로 잉여 수산이온과 잔류염소(Cl)이온을 제거하여 건조기에서 약 100℃로 4시간 동안 건조시키고, 4℃/분의 승온속도로 상승되는 전기로의 알루미나 도가니에 넣어 800℃까지 승온시켜 1시간동안 유지한후 로냉시킨다.96 mol of barium chloride (BaCl 2 ), 101 mol of carbon tetrachloride (TiCl 4 ), CaCl 2 4 mol, YCl 3 0.11 mol, AlCl 3 0.2 mol, SiCl 4 0.5 mol, LiCl 0.2 mol, SbOCl 0.06 mol, MnCl 2 0.08 mol at room temperature After mixing for 30 minutes, 2.0 to 3.0 mol of a small amount of C 2 H 2 O 4 2H 2 O solution was added as a coprecipitation agent to prepare a mixed barium titanyl oxalate as an intermediate, and the resulting intermediate was stirred at room temperature for 30 minutes to 1 hour. After the reaction, the result was vacuum filtered, and the excess hydroxyl ions and residual chlorine (Cl) ions were removed by washing with water about 3 to 5 times, dried at about 100 ° C. in a drier for 4 hours, and then heated at a temperature rising rate of 4 ° C./min. Into an alumina crucible in an electric furnace, the temperature was raised to 800 ° C. and maintained for 1 hour, followed by quenching.

상기과정으로 얻은 혼합 티탄산 바륨분말에 비닐알콜을 결합제로 넣은후 폴리에틸렌이 코팅된 볼밀 및 메디아를 통해 습식혼합한후 조립하여 직경 24mm, 두께 3mm의 디스크형으로 1000kg/㎠의 압력을 걸어서 성형한 후 1200∼1250℃에서 0.5∼1시간 소성한다.After putting vinyl alcohol as a binder into the mixed barium titanate powder obtained in the above process, wet mixing was carried out through a polyethylene-coated ball mill and media, and then assembled and molded by applying a pressure of 1000 kg / ㎠ in a disk shape having a diameter of 24 mm and a thickness of 3 mm. It bakes for 0.5 to 1 hour at 1200-1250 degreeC.

이때 소성과정중 냉각단계에서 분당 1℃∼3℃로 냉각시키면서 1050℃∼1150℃의 온도범위에서 1∼2시간 유지시키는 것으로 본 발명은 구성된다.At this time, the present invention is configured to maintain for 1 to 2 hours in the temperature range of 1050 ℃ to 1150 ℃ while cooling to 1 ℃ to 3 ℃ per minute in the cooling step during the firing process.

상기 구성에 있어서, 소성온도가 1200℃보다 낮으면 절연체로 되고 1250℃보다 높으면 비저항이 크고, 구배, R비, 내전압이 떨어지는 등 써미스터로서의 특성이 저하되며, 냉각시 유지온도가 1050℃보다 낮거나 1150℃보다 높으면 냉각조건의 변화효과가 없고, 또한 유지시간이 1시간보다 짧거나 2시간보다 길면 냉각 조건의 변화효과가 없으며, 또 냉각속도가 1℃/분보다 작으면 속도가 너무 늦어 실제 생산시에 적용키 어려우며 3℃/분보다 크면 냉각조건의 변화효과가 없다.In the above constitution, when the firing temperature is lower than 1200 ° C., it becomes an insulator, and when it is higher than 1250 ° C., the resistivity is large, and the characteristics of the thermistor are lowered, such as a gradient, R ratio, and withstand voltage drop, and the holding temperature during cooling is lower than 1050 ° C. If it is higher than 1150 ℃, there is no effect of changing the cooling condition. If the holding time is shorter than 1 hour or longer than 2 hours, there is no effect of changing the cooling condition. If the cooling rate is less than 1 ℃ / min, the actual speed is too slow. It is difficult to apply at the time and if it is more than 3 ℃ / min, there is no change effect of cooling condition.

상기에서 구배는 하기식에 의해 정의한 것으로,Gradient in the above is defined by the following formula,

Figure kpo00001
Figure kpo00001

단, = 큐리온도= Curie temperature

T2= 큐리온도보다 50℃ 높은온도T 2 = 50 ℃ higher than Curie temperature

R1= 온도 T1에서의 저항값R 1 = resistance at temperature T 1

R2=온도 T2에서의 저항값R 2 = Resistance value at temperature T 2

또, R비인 Rmax/Rmin은 최대저항값과 최저저항값과의 비이다.Rmax / Rmin, which is an R ratio, is a ratio between the maximum resistance value and the minimum resistance value.

제1도에서 최고유지온도는 제1도의 ②부분이며, 최고온도 유지시간은 ②부분에서의 유지시간이며, 냉각조건에서의 유지온도는 ④부분이며, 유지시간은 ④부분에서의 유지시간이며, 냉각속도는 ③ 및 ⑤부분에서의 냉각속도를 나타낸다.In FIG. 1, the maximum holding temperature is the part ② of FIG. 1, the maximum temperature holding time is the holding time in the part ②, the holding temperature in the cooling condition is the part ④, and the holding time is the holding time in the part ④, The cooling rate represents the cooling rate in the ③ and ⑤ parts.

이상 언급한 바와 같이, 염화물에 의한 공침분말을 사용한 경우 소성온도를 1200℃∼1250℃로 하고, 냉각과정에서 유지온도를 1050℃∼1150℃의 온도범위로하고, 유지시간을 1∼2시간으로, 냉각속도를 1℃∼3℃/분으로 하면 구배, 내전압성이 우수하며 재현성이 뛰어난 정특성 써미스터를 얻을 수 있다.As mentioned above, when the coprecipitation powder using chloride is used, the firing temperature is 1200 ° C to 1250 ° C, the holding temperature is 1050 ° C to 1150 ° C during the cooling process, and the holding time is 1 to 2 hours. When the cooling rate is 1 ° C. to 3 ° C./min, a static thermistor having excellent gradient and withstand voltage and excellent reproducibility can be obtained.

이하 실시예 및 비교실시예를 통해 본 발명의 구성 및 작용효과에 대해서 상술하고자 한다. 그러나 다음 예들이 본 발명의 범주를 한정하는 것은 아니다.Through the following Examples and Comparative Examples will be described in detail with respect to the configuration and operation of the present invention. However, the following examples do not limit the scope of the present invention.

[실시예 1∼4]EXAMPLES 1-4

(1) 티탄산 바륨 조성물 제조(1) Barium titanate composition preparation

염화바륨(BaCl2) 96mol, 사염화 티탄(TiCl4) 101mol, CaCl24mol, YCl30.11mol, AlCl30.2mol, SiCl40.5mol, LiCl 0.2mol, SbOCl 0.06mol, MnCl20.08mol를 실온에서 약 30분간 혼합후 공침제로 2.0∼3.0mol 미량의 C2H2O42HO 용액을 투입, 중간체인 혼합 바륨티타닐 옥살레이트를 제조하고, 생성된 중간체를 30분∼1시간 동안 실온에서 반응시킨후 진공여과하고, 약 3∼5회 수세로 잉여 수산이온과 잔류염소(Cl)이온을 제거하여 건조기에서 약 100℃로 4시간 동안 건조시키고, 4℃/분의 승온속도로 상승되는 전기로의 알루미나 도가니에 넣어 800℃까지 승온시켜 1시간동안 유지한 후 로냉시킨다.96 mol of barium chloride (BaCl 2 ), 101 mol of titanium tetrachloride (TiCl 4 ), CaCl 2 4mol, YCl 3 0.11mol, AlCl 3 0.2mol, SiCl 4 0.5mol, LiCl 0.2mol, SbOCl 0.06mol, MnCl 2 0.08mol After mixing for about 30 minutes, 2.0 to 3.0 mol of a small amount of C 2 H 2 O 4 2HO solution was added as a coprecipitation agent to prepare a mixed barium titanyl oxalate as an intermediate, and the resulting intermediate was reacted at room temperature for 30 minutes to 1 hour. After filtration and vacuum filtration, the excess hydroxyl ions and residual chlorine (Cl) ions are removed by washing with water three to five times and dried in a drier at about 100 ° C. for 4 hours, and then heated at an elevated temperature of 4 ° C./min. Into an alumina crucible, the temperature was raised to 800 ° C. and maintained for 1 hour, followed by quenching.

상기과정으로 얻은 혼합 티탄산 바륨분말에 폴리비닐알콜을 결합제로 넣은후 폴리에틸렌이 코팅된 볼밀 및 메디아를 통해 습식 혼합한 후, 직경 24mm, 두께 3mm의 디스크형으로 1000kg/㎠의 압력을 걸어서 성형한다.Polyvinyl alcohol was added to the mixed barium titanate powder obtained by the above process as a binder, followed by wet mixing through a polyethylene-coated ball mill and media, followed by molding at a pressure of 1000 kg / cm 2 in a disk shape having a diameter of 24 mm and a thickness of 3 mm.

(2) 소성방법(2) firing method

표 1에 표시한대로 상시 제조된 성형품을 최고유지온도에서 0.5 또는 1시간 유지시키고, 냉각단계에서 분당 2℃ 또는 3℃로 냉각시키면서 1100℃, 1050℃ 또는 1150℃에서 1시간 또는 2시간 유지시켰다.As shown in Table 1, the molded product was always maintained at 0.5 or 1 hour at the highest holding temperature, and maintained at 1100 ° C, 1050 ° C or 1150 ° C for 1 hour or 2 hours while cooling to 2 ° C or 3 ° C per minute in the cooling step.

(3) 물성측정방법(3) Property measurement method

물성측정을 위해 상기 제조된 최종 반도체자기재료의 표면을 연마지(#100)로 갈아낸 후 니켈 무전해 도금으로 1차전극을 형성시킨후 은(Ag)을 소부시켜 2차전극을 형성시키고 측면을 연마한 후 특성을 측정하는 바, 비저항은 멀티미터를 사용하였고, 구배 및 R비는 상술한 바와 같은 방법으로, 내전압(VB)는 통상의 내전압측정기로 측정하여 표 1에 기재하였다.For the measurement of physical properties, the surface of the prepared final semiconductor magnetic material was ground with abrasive paper (# 100), and then the primary electrode was formed by nickel electroless plating. Then, the secondary electrode was formed by baking silver (Ag). After polishing, the characteristics were measured, and the resistivity was measured using a multimeter. The gradient and R ratio were measured in the same manner as described above, and the breakdown voltage (V B ) was measured in a conventional breakdown voltage meter and is shown in Table 1.

[비교예 1∼8]Comparative Examples 1 to 8

상기 실시예에서 제조된 티탄산 바륨조성물을 하기 표 1에서 기재한 본 발명의 범주를 벗어난 방법으로 소성시켜 같은 방법으로 그 물성을 측정하여 표 1에 기재하였는 바, 이를 본 발명의 것과 비교해 보면 본 발명에 따른 것이 구배 및 R비값이 크고 내전압성이 뛰어남을 알 수 있다.The barium titanate composition prepared in the above Example was calcined by a method outside the scope of the present invention described in Table 1, and the physical properties thereof were measured in the same manner as described in Table 1, which is compared with that of the present invention. As can be seen that the gradient and R ratio are large and the voltage resistance is excellent.

[참고예][Reference Example]

이는 염화물을 출발원료로 하는 것이 아니고, 산화물을 출발 원료로 고상 반응시킨 것으로, 탄산바륨(BaCO3) 96mol, 산화니탄(TiO2) 101mol, 탄산칼슘(CaCO3)4mol의 각원료를 배합하고 폴리에틸렌이 코팅된 볼밀 및 메디아를 통해 습식 혼합한 후 탈수건조하여 이것을 1150℃에서 하소하고, 이 하소한 배합물 100mol에 대해서 0.11mol Y2O3,0.2mol Al2O3,0.5mol SiO2, 0.1mol Li2CO3, 0.06mol Sb2O3, 0.03mol MnCl2를 각각 넣고 여기에 폴리비닐알콜을 결합제로 넣은후 폴리에틸렌이 코팅된 볼밀 및 메디아를 통해 습식혼합한 후 조립하여, 직경 24mm, 두께 3mm의 디스크형으로 1000kg/㎠의 압력을 걸어서 성형한후 1350℃에서 1시간 소성하였다.This is not a starting material of chloride, but a solid phase reaction of an oxide as starting material. A mixture of 96 mol of barium carbonate (BaCO 3 ), 101 mol of titanium oxide (TiO 2 ), and 4 mol of calcium carbonate (CaCO 3 ) is mixed with polyethylene. After wet mixing through the coated ball mill and media, it was dehydrated and calcined at 1150 ° C., and 0.11 mol Y 2 O 3, 0.2 mol Al 2 O 3, 0.5 mol SiO 2 , 0.1 mol with respect to 100 mol of the calcined blend. Li 2 CO 3 , 0.06mol Sb 2 O 3 , 0.03mol MnCl 2 , respectively, polyvinyl alcohol was added as a binder, wet-mixed through polyethylene coated ball mill and media, and then assembled. It was molded by applying a pressure of 1000 kg / cm 2 into a disk shape of and then calcined at 1350 ° C. for 1 hour.

이 성형품의 물성을 상기 실시예에서 언급한 측정방법에 의해 측정하여 표 1에 기재하였다.The physical properties of this molded article were measured by the measuring method mentioned in the above examples and listed in Table 1.

Figure kpo00002
Figure kpo00002

Claims (1)

염화물의 공침법에 의한 분말을 사용한 티탄산 바륨계 반도체자기조성물의 제조방법에 있어서, 소성과 정중 최고 유지온도를 1200℃∼1250℃, 유지시간을 0.5∼1시간으로 하고, 냉각단계에서 800℃까지 1℃∼3℃/분으로 냉각하면서 1050℃∼1150℃의 온도범위에서 1∼2시간 유지시키는 것을 특징으로 하는 티탄산 바륨계 반도체자기조성물의 제조방법.In the method for producing a barium titanate-based semiconductor magnetic composition using a powder by a coprecipitation method of chloride, the maximum holding temperature during firing is 1200 ° C to 1250 ° C, the holding time is 0.5 to 1 hour, and the cooling step is to 800 ° C. A method for producing a barium titanate-based semiconductor magnetic composition, wherein the barium titanate-based semiconductor magnetic composition is maintained at a temperature range of 1050 ° C to 1150 ° C for 1-2 hours while cooling at 1 ° C to 3 ° C / min.
KR1019880015518A 1988-11-24 1988-11-24 Method of manufacturing semiconductor magnetic compound of bati03 systems KR970006621B1 (en)

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