KR970005019Y1 - Plasma etching equipment - Google Patents

Plasma etching equipment Download PDF

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Publication number
KR970005019Y1
KR970005019Y1 KR2019940000163U KR19940000163U KR970005019Y1 KR 970005019 Y1 KR970005019 Y1 KR 970005019Y1 KR 2019940000163 U KR2019940000163 U KR 2019940000163U KR 19940000163 U KR19940000163 U KR 19940000163U KR 970005019 Y1 KR970005019 Y1 KR 970005019Y1
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KR
South Korea
Prior art keywords
plasma etching
coil
etching apparatus
plasma
inches
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Application number
KR2019940000163U
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Korean (ko)
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KR950023800U (en
Inventor
김혜동
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금성일렉트론 주식회사
문정환
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Priority to KR2019940000163U priority Critical patent/KR970005019Y1/en
Publication of KR950023800U publication Critical patent/KR950023800U/en
Application granted granted Critical
Publication of KR970005019Y1 publication Critical patent/KR970005019Y1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

내용없음.None.

Description

플라즈마 식각장치Plasma Etching Equipment

제1도는 종래의 기술에 의한 플라즈마 식각장치의 구성도1 is a block diagram of a plasma etching apparatus according to the prior art

제2도는 본 고안에 의한 플라즈마 식각장치의 구성도2 is a block diagram of a plasma etching apparatus according to the present invention

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 파워 발생기 2, 2' : 코일1: power generator 2, 2 ': coil

3 : 웨이퍼 4 : RF 정합기3: wafer 4: RF matcher

본 고안은 플라즈마 식각장치에 관한 것으로, 특히 플라즈마 식각장치의 코일 형태를 변화시켜 플라즈마 균일도를 향상시키도록 한 플라즈마 식각장치에 관한 것이다.The present invention relates to a plasma etching apparatus, and more particularly, to a plasma etching apparatus to improve the plasma uniformity by changing the coil shape of the plasma etching apparatus.

종래의 플라즈마 식각장치는 제1도에 도시한 바와 같이 등간격 동심원 형태의 8인치(inch) 정도의 길이를 갖는 코일(2)에 파워를 인가하는 부분과 접지로 나가는 부분이 있다.In the conventional plasma etching apparatus, as shown in FIG. 1, there is a part for applying power to the coil 2 having a length of about 8 inches in the form of equidistant concentric circles and a part which goes to ground.

좀 더 자세히 설명하면 상기 코일(2)의 간격은 약 0.5인치로서 등간격을 유지하며, 코일(2)의 감긴 횟수는 8회이고, 구리와 주석의 합금으로 이루어지며, 상기 코일의 하부에 위치해 있는 웨이퍼(wafer)(3)를 통해 파워가 전달되어 전계와 자계를 형성시켜 식각실로 들어오는 가스를 여과시켜 플라즈마를 형성하도록 되어있다.In more detail, the spacing of the coils 2 is about 0.5 inches, maintaining equal intervals, and the number of windings of the coils 2 is 8 times, and is made of an alloy of copper and tin, and is located below the coils. Power is transmitted through the wafer 3 to form an electric field and a magnetic field to filter the gas entering the etching chamber to form a plasma.

그러나 상기와 같이 구성된 플라즈마 식각장치의 플라즈마 밀도에 영향을 주는 지속밀도는 상기한 코일의 단면적에 비례하는데, 단위 면적당 권선의 수가 많은 중앙부가 가장 자리에 비해 플라즈마 밀도가 높아지게 되어 중앙부의 식각속도가 가장자리에 비해 빨라지므로써 식각의 균일성이 저하되는 문제점이 있다.However, the continuous density affecting the plasma density of the plasma etching apparatus configured as described above is proportional to the cross-sectional area of the coil, and the central portion having a large number of windings per unit area has a higher plasma density than the edge, so the etching speed of the central portion is edged. There is a problem in that the uniformity of the etching is lowered by being faster than.

따라서 본 고안의 목적은 상기와 같은 문제점을 해결하기 위하여 코일의 형태를 변화시켜 플라즈마 밀도를 균일하게 유지할 수 있는 플라즈마 식각장치를 제공하는 것이다.Therefore, an object of the present invention is to provide a plasma etching apparatus capable of maintaining a uniform plasma density by changing the shape of the coil in order to solve the above problems.

이하 첨부도면을 참조하여 본 고안을 좀 더 상세하게 설명하고자 한다.Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

본 고안의 플라즈마 식각장치는 제2도에 도시한 바와 같이, 냉장고의 방열판처럼 플라즈마 밀도가 균일하게 되도록 코일(2')을 횡방향의 등간격을 갖는 파워형태로 형성한다.In the plasma etching apparatus of the present invention, as shown in FIG. 2, the coil 2 ′ is formed in a power shape having equal intervals in the lateral direction such that the plasma density is uniform, as in a heat sink of a refrigerator.

상기 코일(2')은 종래와 동일하게 구리와 주석의 합금을 사용하며, 코일(2')의 가로 및 세로 길이를 모두 종래의 8인치보다 큰 12인치로하여 약간의 위치상의 오차가 발생하여도 일반적으로 8인치인 웨이퍼에 플라즈마 밀도가 고루 분포하도록 하고, 또한 파형형태를 갖는 코일(2')의 피치(pitch) 간격은 종래의 0.5인치보다 좁은 0.3인치에 단위 면적당 권선수가 동일하게 되도록하며, 횡방향으로의 파형형태의 수는 10개 정도로 하여 코일(2')이 횡방향으로 반복된 횟수가 20회가 되도록한다.The coil 2 'uses an alloy of copper and tin as in the prior art, and a slight positional error occurs by making the width and length of the coil 2' both 12 inches larger than the conventional 8 inches. Also, the plasma density is uniformly distributed on the wafer, which is generally 8 inches, and the pitch spacing of the coil 2 'having the wave shape is equal to the number of turns per unit area at 0.3 inches narrower than the conventional 0.5 inches. The number of waveforms in the transverse direction is about 10 so that the number of times the coil 2 'is repeated in the transverse direction is 20 times.

이상에서와 같이 본 고안에 의하면 코일의 분포가 균일하여 가장자리나 중앙부 모두 플라즈마 밀도가 균일하며, 코일이 웨이퍼보다 넓은 면적으로 위치하기 때문에 웨이퍼가 놓이는 위치상에 약간의 오차가 발생하여도 플라즈마 밀도의 균일성에 큰 영향을 주지않으므로 공정이 까다롭지 않고, 플라즈마 밀도가 균일함에따라 식각균일성이 향상되며, 특히 후속공정 중 산화막의 평탄화공정에 매우 유리한 효과가 있다.As described above, according to the present invention, since the coil is uniformly distributed, the plasma density is uniform at both the edge and the center, and the coil is located in a larger area than the wafer, so even if a slight error occurs at the position where the wafer is placed, Since it does not affect the uniformity, the process is not demanding, and the uniformity of the plasma is improved as the plasma density is uniform, which is particularly advantageous for the planarization of the oxide film during the subsequent process.

Claims (3)

파워가 인가되어 생성된 자속밀도가 균일하게 분포하여 그 하부에 장착되는 웨이퍼(3)가 가스 주입시 균일한 플라즈마 밀도분포에 의해 동일한 식각속도를 유지하도록 횡방향으로 등간격의 소정 갯수의 파형형태로 이루어진 코일(2')을 포함하여 구성된 것을 특징으로 하는 플라즈마 식각장치.The magnetic flux density generated by the application of power is uniformly distributed so that the wafer 3 mounted on the lower portion maintains the same etching rate by the uniform plasma density distribution during gas injection. Plasma etching apparatus comprising a coil (2 ') consisting of. 제1항에 있어서, 상기 코일(2')은 소정갯수의 파형형태가 가로 및 세로 모드 웨이퍼(3)보다 큰 것을 특징으로 하는 플라즈마 식각장치.The plasma etching apparatus according to claim 1, wherein the coil (2 ') has a predetermined number of waveform shapes larger than the horizontal and vertical mode wafers (3). 제1항에 있어서, 상기 코일(2')의 각 피치간격은 0.3인치이며, 코일의 반복횟수는 20회임을 특징으로 하는 플라즈마 식각장치.2. The plasma etching apparatus of claim 1, wherein each pitch of the coils is 0.3 inches, and the number of repetitions of the coils is 20 times.
KR2019940000163U 1994-01-07 1994-01-07 Plasma etching equipment KR970005019Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019940000163U KR970005019Y1 (en) 1994-01-07 1994-01-07 Plasma etching equipment

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Application Number Priority Date Filing Date Title
KR2019940000163U KR970005019Y1 (en) 1994-01-07 1994-01-07 Plasma etching equipment

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KR950023800U KR950023800U (en) 1995-08-23
KR970005019Y1 true KR970005019Y1 (en) 1997-05-22

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