KR970004104A - Manufacturing method of fine silicon bridge structure - Google Patents

Manufacturing method of fine silicon bridge structure Download PDF

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Publication number
KR970004104A
KR970004104A KR1019950016296A KR19950016296A KR970004104A KR 970004104 A KR970004104 A KR 970004104A KR 1019950016296 A KR1019950016296 A KR 1019950016296A KR 19950016296 A KR19950016296 A KR 19950016296A KR 970004104 A KR970004104 A KR 970004104A
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KR
South Korea
Prior art keywords
layer
high concentration
epitaxial layer
low concentration
impurity
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Application number
KR1019950016296A
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Korean (ko)
Inventor
김광희
이봉회
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곽정소
한국전자 주식회사
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Application filed by 곽정소, 한국전자 주식회사 filed Critical 곽정소
Priority to KR1019950016296A priority Critical patent/KR970004104A/en
Publication of KR970004104A publication Critical patent/KR970004104A/en

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Abstract

본 발명은 미세 실리콘 브리지구조의 제조방법에 관한 것으로서, 특히 고농도의 반도체 기판에 저농도의 제1에피층을 형성하는 단계; 캐비티 영역을 정의하여 상기 저농도의 제1에피층에 고농도의 불순물층을 형성하는 단계; 제1에피층 전면에 저농도의 제2에피층과 절연막을 차례로 형성하는 단계; 브리지가 형성될 부분을 정의하여 상기 절연막과 제2에피층을 선택적으로 제거하는 단계; 고농도의 불순물층을 다공질화하는 단계; 및 다공질화된 불순물층을 선택적으로 식각하는 단계를 구비하는 것을 특징으로 한다.The present invention relates to a method of manufacturing a fine silicon bridge structure, in particular, forming a low concentration first epitaxial layer on a high concentration semiconductor substrate; Defining a cavity region to form a high concentration impurity layer in the low concentration first epi layer; Sequentially forming a low concentration second epitaxial layer and an insulating film on the entire first epitaxial layer; Defining a portion where a bridge is to be formed to selectively remove the insulating layer and the second epitaxial layer; Porousizing the impurity layer at a high concentration; And selectively etching the porous impurity layer.

따라서, 본 발명에서는 고농도의 기판을 사용함으로써 양극반응시 전류밀도의 향상으로 빔폭의 크기 제한을 줄일 수 있다.Therefore, in the present invention, by using a substrate of high concentration, the size limitation of the beam width can be reduced by improving the current density during the anode reaction.

Description

미세 실리콘 브리지구조 제조방법Manufacturing method of fine silicon bridge structure

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (2)

고농도의 반도체 기판에 저농도의 제1에피층을 형성하는 단계; 캐비티 영역을 정의하여 상기 저농도의 제1에피층에 고농도의 불순물층을 형성하는 단계; 상기 제1에피층 전면에 저농도의 제2에피층과 절연막을 차례로 형성하는 단계; 브리지가 형성될 부분을 정의하여 상기 절연막과 제2에피층을 선택적으로 제거하는 단계; 상기 고농도의 불순물층을 다공질화하는 단계; 상기 다공질화된 불순물층을 선택적으로 식각하는 단계를 구비하는 것을 특징으로 하는 미세 실리콘 브리지구조에 제조방법.Forming a low concentration first epitaxial layer on a high concentration semiconductor substrate; Defining a cavity region to form a high concentration impurity layer in the low concentration first epi layer; Sequentially forming a low concentration second epitaxial layer and an insulating layer on the entire first epitaxial layer; Defining a portion where a bridge is to be formed to selectively remove the insulating layer and the second epitaxial layer; Porousizing the high concentration impurity layer; And selectively etching the porous impurity layer. 제1항에 있어서, 상기 고농도의 반도체 기판의 불순물농도는 1019㎝-3이상인 것을 특징으로 하는 미세 실리콘 브리지구조의 제조방법.The method of manufacturing a fine silicon bridge structure according to claim 1, wherein the impurity concentration of the high concentration semiconductor substrate is 10 19 cm -3 or more. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950016296A 1995-06-19 1995-06-19 Manufacturing method of fine silicon bridge structure KR970004104A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950016296A KR970004104A (en) 1995-06-19 1995-06-19 Manufacturing method of fine silicon bridge structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950016296A KR970004104A (en) 1995-06-19 1995-06-19 Manufacturing method of fine silicon bridge structure

Publications (1)

Publication Number Publication Date
KR970004104A true KR970004104A (en) 1997-01-29

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KR1019950016296A KR970004104A (en) 1995-06-19 1995-06-19 Manufacturing method of fine silicon bridge structure

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100312806B1 (en) * 1999-12-30 2001-11-03 박종욱 Method for forming semiconductor bridge

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100312806B1 (en) * 1999-12-30 2001-11-03 박종욱 Method for forming semiconductor bridge

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