KR970004034A - Nonvolatile Memory Cells and Manufacturing Method Thereof - Google Patents

Nonvolatile Memory Cells and Manufacturing Method Thereof Download PDF

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Publication number
KR970004034A
KR970004034A KR1019950016410A KR19950016410A KR970004034A KR 970004034 A KR970004034 A KR 970004034A KR 1019950016410 A KR1019950016410 A KR 1019950016410A KR 19950016410 A KR19950016410 A KR 19950016410A KR 970004034 A KR970004034 A KR 970004034A
Authority
KR
South Korea
Prior art keywords
manufacturing
memory cells
nonvolatile memory
nonvolatile
cells
Prior art date
Application number
KR1019950016410A
Other languages
Korean (ko)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to KR1019950016410A priority Critical patent/KR970004034A/en
Publication of KR970004034A publication Critical patent/KR970004034A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
KR1019950016410A 1995-06-20 1995-06-20 Nonvolatile Memory Cells and Manufacturing Method Thereof KR970004034A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950016410A KR970004034A (en) 1995-06-20 1995-06-20 Nonvolatile Memory Cells and Manufacturing Method Thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950016410A KR970004034A (en) 1995-06-20 1995-06-20 Nonvolatile Memory Cells and Manufacturing Method Thereof

Publications (1)

Publication Number Publication Date
KR970004034A true KR970004034A (en) 1997-01-29

Family

ID=60934385

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950016410A KR970004034A (en) 1995-06-20 1995-06-20 Nonvolatile Memory Cells and Manufacturing Method Thereof

Country Status (1)

Country Link
KR (1) KR970004034A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000001660A (en) * 1998-06-12 2000-01-15 김영환 Semiconductor device and method thereof
KR100415518B1 (en) * 2000-06-30 2004-01-31 주식회사 하이닉스반도체 Method for manufacturing a flash memory cell
KR100422347B1 (en) * 2001-06-15 2004-03-12 주식회사 하이닉스반도체 Method for fabricating flash memory device
KR100417728B1 (en) * 1997-07-30 2004-03-19 지멘스 악티엔게젤샤프트 Non-volatile memory cell with high coupling capacity
KR102192251B1 (en) * 2020-04-13 2020-12-16 김동식 Method for manufacturing a bamboo salt with bile of ox

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100417728B1 (en) * 1997-07-30 2004-03-19 지멘스 악티엔게젤샤프트 Non-volatile memory cell with high coupling capacity
KR20000001660A (en) * 1998-06-12 2000-01-15 김영환 Semiconductor device and method thereof
KR100415518B1 (en) * 2000-06-30 2004-01-31 주식회사 하이닉스반도체 Method for manufacturing a flash memory cell
KR100422347B1 (en) * 2001-06-15 2004-03-12 주식회사 하이닉스반도체 Method for fabricating flash memory device
KR102192251B1 (en) * 2020-04-13 2020-12-16 김동식 Method for manufacturing a bamboo salt with bile of ox

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application