KR970003654A - Metal nitride thin film deposition compound and deposition method using the same - Google Patents

Metal nitride thin film deposition compound and deposition method using the same Download PDF

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KR970003654A
KR970003654A KR1019950017120A KR19950017120A KR970003654A KR 970003654 A KR970003654 A KR 970003654A KR 1019950017120 A KR1019950017120 A KR 1019950017120A KR 19950017120 A KR19950017120 A KR 19950017120A KR 970003654 A KR970003654 A KR 970003654A
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organometallic compound
chloride
formula
compound
metal
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KR0156980B1 (en
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신현주
신현국
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신현주
신현국
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

1. 청구범위에 기재된 발명이 속하는 기술분야1. TECHNICAL FIELD OF THE INVENTION

본 발명은 반도체 기판으로 사용되는 실리콘 기판위에 질화금속 박막을 증착시키는데 사용되는 전구체 화합물과 그 화합물의 제조방법 및 그 화합물을 이용하여 실리콘 기판에 질화금속 박막을 증착시키는 방법에 관한 것이다.The present invention relates to a precursor compound used to deposit a metal nitride thin film on a silicon substrate used as a semiconductor substrate, a method for preparing the compound, and a method for depositing a metal nitride thin film on a silicon substrate using the compound.

2. 발명이 해결하고자 하는 기술적 과제2. Technical problem to be solved by the invention

본 발명은 박막의 증착공정에서 낮은 증기압을 나타내고, 증착 속도의 증가 및 탄소 불순물 감소시키고자 하는데 유리한화합물을 제공하고자 하는 것이다.The present invention is to provide a compound that exhibits a low vapor pressure in the deposition process of the thin film, and is advantageous for increasing the deposition rate and reducing the carbon impurities.

3. 발명의 해결방법의 요지3. Summary of Solution to Invention

본 발명에서는 하기의 일반식(1)로 정의되는 유기금속 화합물을 제공함으로써 상기와 같은 문제점을 해결한 것이다.The present invention solves the above problems by providing an organometallic compound defined by the following general formula (1).

M[N(CH3)C2H5]X(1)M [N (CH 3 ) C 2 H 5 ] X (1)

상기식에서 M은 주기율표상의 3족, 4족, 5족에 속하는 금속원소 중에서 선택되며, X는 3내지 5의 정수이다.In the above formula, M is selected from metal elements belonging to Groups 3, 4 and 5 of the periodic table, and X is an integer of 3 to 5.

4. 발명의 중요한 용도4. Important uses of the invention

본 발명의 화합물은 반도체산업에서 실리콘 기판상에 질화금속박막을 형성시키는데 이용되는 것이다.The compound of the present invention is used to form a thin metal nitride film on a silicon substrate in the semiconductor industry.

Description

질화금속 박막증착용 화합물 및 그를 이용한 증착방법Metal nitride thin film deposition compound and deposition method using the same

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (12)

하기의 일반식(1)로 정의되는 유기금속 화합물Organometallic compound defined by the following general formula (1) M[N(CH3)C2H5]X(1)M [N (CH 3 ) C 2 H 5 ] X (1) 상기식에서 M은 주기율표상의 3A족, 4A족, 4B족, 5B족에 속하는 금속원소중에서 선택되며, X는 3 내지 5의 정수이다.Wherein M is selected from metal elements belonging to Groups 3A, 4A, 4B, and 5B on the periodic table, and X is an integer of 3 to 5. 제1항에 있어서, M이 알루미늄(Al), 갈륨(Ga), 규소(Si), 게르마늄(Ge), 주석(Sn), 티타늄(Ti), 지르코늄(Zr), 탄탈륨(Ta) 중에서 선택됨을 특징으로 하는 일반식(1)의 유기금속화합물.The method of claim 1, wherein M is selected from aluminum (Al), gallium (Ga), silicon (Si), germanium (Ge), tin (Sn), titanium (Ti), zirconium (Zr), and tantalum (Ta). An organometallic compound of the general formula (1). 제2항에 있어서, M이 규소(Si), 주석(Sn), 티타늄(Ti), 지르코늄(Zr) 중에서 선택되고, X가 4인 것을 특징으로 하는 일반식(1)의 유기금속화합물.The organometallic compound of formula (1) according to claim 2, wherein M is selected from silicon (Si), tin (Sn), titanium (Ti), zirconium (Zr), and X is 4. 제3항에 있어서, M이 티타늄(Ti) 중에서 선택되고 X가 4인 것을 특징으로 하는 일반식(1)의 유기금속화합물.The organometallic compound of formula (1) according to claim 3, wherein M is selected from titanium (Ti) and X is 4. 제2항에 있어서, M이 알루미늄(Al)이고, X가 3인 것을 특징으로 하는 일반식(1)의 유기금속 화합물.3. The organometallic compound of formula (1) according to claim 2, wherein M is aluminum (Al) and X is 3. 제2항에 있어서, M이 탄탈륨(Ta)이고, X가 5인 것을 특징으로 하는 일반식(1)의 유기금속 화합물.The organometallic compound of formula (1) according to claim 2, wherein M is tantalum (Ta) and X is 5. 올레핀계의 알칼리금속염이 녹아 있는 용액에 에틸메틸아민을 첨가하여 반응시켜 알칼리금속에틸메틸아미드를 제조하고, 알칼리금속에틸메틸아미드를 함유하는 용액에 제3A족, 제4A족, 제4B족, 제5B족에 속하는 금속의 염화물을적가하여 반응시킴을 특징으로 하는 일반식(1)의 유기금속 화합물의 제조방법.Ethyl methyl amine was added to the solution in which the alkali metal salt of the olefin type was dissolved and reacted to produce an alkali metal ethyl methyl amide. A method for producing an organometallic compound of the general formula (1), characterized by reacting by dropwise addition of a chloride of a metal belonging to group 5B. 제7항에 있어서, 금속의 염화물이 염화알루미늄인 것을 특징으로 하는 일반식 (1)의 유기금속 화합물의 제조방법.8. The method for producing an organometallic compound of formula (1) according to claim 7, wherein the chloride of the metal is aluminum chloride. 제7항에 있어서, 금속의 염화물이 사염화규소, 염화주석, 염화티탄, 염화지르코늄 중에서 선택된 염화물인 것을 특징으로 하는 일반식(1)의 유기금속 화합물의 제조방법.The method for producing an organometallic compound of formula (1) according to claim 7, wherein the metal chloride is a chloride selected from silicon tetrachloride, tin chloride, titanium chloride, and zirconium chloride. 제7항에 있어서, 금속의 염화물이 염화탄탈륨인 것을 특징으로 하는 일반식(1)의 유기금속 화합물의 제조방법.The method for producing an organometallic compound of formula (1) according to claim 7, wherein the metal chloride is tantalum chloride. 제7항 내지 제11항 중 어느 한 항에 있어서, 올레핀계금속염이 부틸부탄인 것을 특징으로 하는 일반식(1)의 유기금속 화합물의 제조방법.The method for producing an organometallic compound of formula (1) according to any one of claims 7 to 11, wherein the olefin-based metal salt is butylbutane. 하기의 일반식(1)로 정의되는 유기금속 화합물을 사용하여 화학증착방법에 의하여 질화금속 박막을 형성시키는 방법.A method of forming a metal nitride thin film by chemical vapor deposition using an organometallic compound defined by the following general formula (1). M[N(CH3)C2H5]X(1)M [N (CH 3 ) C 2 H 5 ] X (1) 상기식에서 M은 주기율표상의 3A족, 4A족, 4B족 및 5B족에 속하는 금속원소 중에서 선택되며, X는 3 내지 5의 정수이다.Wherein M is selected from metal elements belonging to Groups 3A, 4A, 4B and 5B on the periodic table, and X is an integer of 3 to 5. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950017120A 1995-06-23 1995-06-23 Compound for deposition nitride methal thin and deposition method thereof KR0156980B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100268792B1 (en) * 1997-06-30 2000-10-16 김영환 Capacitor forming method of semiconductor device
KR100618879B1 (en) * 2004-12-27 2006-09-01 삼성전자주식회사 A Ge precursor, a thin layer prepared by using the Ge precursor, a method for preparing the thin layer and a phase-change memory device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5290488B2 (en) 2000-09-28 2013-09-18 プレジデント アンド フェロウズ オブ ハーバード カレッジ Vapor growth of oxides, silicates and phosphates
WO2003083167A1 (en) 2002-03-28 2003-10-09 President And Fellows Of Harvard College Vapor deposition of silicon dioxide nanolaminates
JP5121196B2 (en) 2006-09-15 2013-01-16 株式会社Ａｄｅｋａ Metal alkoxide compound, raw material for thin film formation, and method for producing thin film
JP5301169B2 (en) * 2008-01-25 2013-09-25 株式会社Ａｄｅｋａ Metal compound, raw material for chemical vapor deposition containing the same, and method for producing metal-containing thin film
JP5971248B2 (en) * 2011-07-21 2016-08-17 Jsr株式会社 Method for manufacturing a substrate including a metal body

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100268792B1 (en) * 1997-06-30 2000-10-16 김영환 Capacitor forming method of semiconductor device
KR100618879B1 (en) * 2004-12-27 2006-09-01 삼성전자주식회사 A Ge precursor, a thin layer prepared by using the Ge precursor, a method for preparing the thin layer and a phase-change memory device

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