KR970003438A - Low Pressure Chemical Vapor Deposition System - Google Patents

Low Pressure Chemical Vapor Deposition System Download PDF

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Publication number
KR970003438A
KR970003438A KR1019950019040A KR19950019040A KR970003438A KR 970003438 A KR970003438 A KR 970003438A KR 1019950019040 A KR1019950019040 A KR 1019950019040A KR 19950019040 A KR19950019040 A KR 19950019040A KR 970003438 A KR970003438 A KR 970003438A
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KR
South Korea
Prior art keywords
outer tube
low pressure
vapor deposition
chemical vapor
pressure chemical
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KR1019950019040A
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Korean (ko)
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KR0168349B1 (en
Inventor
신연경
장재호
김용섭
Original Assignee
김광호
삼성전자 주식회사
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Priority to KR1019950019040A priority Critical patent/KR0168349B1/en
Publication of KR970003438A publication Critical patent/KR970003438A/en
Application granted granted Critical
Publication of KR0168349B1 publication Critical patent/KR0168349B1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means

Abstract

반도체 장치의 제조에 필수적인 물질층들을 증착하기 위하여 사용하는 저압 화학 기상 증착장치에 관하여 개시한다. 본 발명에 의한 LPCVD 장치에서 외부 튜브의 길이를 증가시켜서, 동작시 상기 외부 튜브가 밀려서 틈새가 발생하는 것을 방지한다. 또한, 상기 외부 튜브의 양쪽 끝 부분에서 상기 외부 튜브의 외경을 증가시켜 유지 보수 시에 발생하는 홈은 상기 끝단 부분에만 발생하여 상기 외부 튜브의 나머지 부분이 손상되는 것을 방지하여서, LPCVD 장치에서 압력을 낮추기 위해서 진공 시스템이 동작하는 경우에 상기 외부 튜브에 생긴 홈에 의해서 누설이 발생하는 것을 방지한다.Disclosed is a low pressure chemical vapor deposition apparatus for use in depositing layers of materials essential for the manufacture of semiconductor devices. In the LPCVD apparatus according to the present invention, the length of the outer tube is increased to prevent the outer tube from being pushed during operation to generate a gap. In addition, the grooves generated during maintenance by increasing the outer diameter of the outer tube at both ends of the outer tube are generated only at the end portion, thereby preventing the rest of the outer tube from being damaged, thereby reducing the pressure in the LPCVD apparatus. When the vacuum system is operated to lower, leakage is prevented by grooves formed in the outer tube.

Description

저압 화학 기상 증착장치Low Pressure Chemical Vapor Deposition System

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 의한 LPCVD 장치를 보여주는 단면도이다.3 is a cross-sectional view showing an LPCVD apparatus according to the present invention.

Claims (8)

화학 반응이 일어나는 내부 튜브; 상기 내부 튜브를 둘러싸면서 낮은 압력을 유지시켜 주는 외부 튜브; 상기 외부 튜브의 둘레를 감싸면서 온도를 조절하기 위한 전열선을 고정시키는 핑거; 및 상기 외부 튜브가 수평 방향으로 움직이는 것을 제한하기 위하여 상기 외부 튜브의 양끝에서 떨어진 일정한 위치에 형성된 돌기 부분을 구비하는 저온 화학 기상 증착장치에 있어서, 동작시 상기 외부 튜브가 밀려서 누설이 발생하는 것을 방지하기 위하여 상기 외부 튜브와 상기 돌기 부분 사이의 거리를 감소시키는 것을 특징으로 하는 저압 화학 기상 증착장치.Inner tubes in which chemical reactions occur; An outer tube surrounding the inner tube to maintain a low pressure; A finger fixing the heating wire for adjusting the temperature while surrounding the outer tube; And a projection formed at a predetermined position away from both ends of the outer tube to limit the movement of the outer tube in a horizontal direction, wherein the outer tube is pushed during operation to prevent leakage. In order to reduce the distance between said outer tube and said protrusion. 제1항에 있어서, 상기 외부 튜브의 길이는 2525㎜인 것을 특징으로 하는 저압 화학 기상 증착장치.The low pressure chemical vapor deposition apparatus according to claim 1, wherein the outer tube has a length of 2525 mm. 제1항에 있어서, 상기 외부 튜브는 쿼츠(quartz)로 형성된 것을 특징으로 하는 저압 화학 기상 증착장치.The low pressure chemical vapor deposition apparatus according to claim 1, wherein the outer tube is formed of quartz. 제1항에 있어서, 상기 외부 튜브와 상기 돌기 부분 사이의 거리는 5㎜ 이하인 것을 특징으로 하는 저압 화학 기상 증착장치.The low pressure chemical vapor deposition apparatus according to claim 1, wherein a distance between the outer tube and the protrusion is 5 mm or less. 화학 반응이 일어나는 내부 튜브; 상기 내부 튜브를 둘러싸면서 낮은 압력을 유지시켜 주는 외부 튜브; 상기 외부 튜브의 둘레를 감싸면서 온도를 조절하기 위한 전열선을 고정시키는 핑거; 및 상기 외부 튜브가 수평 방향으로 움직이는 것을 제한하기 위하여 상기 외부 튜브의 양끝에서 떨어진 일정한 위치에 형성된 돌기부분을 구비하는 저압 화학 기상 증착장치에 있어서, 상기 외부 튜브와 상기 핑거가 마찰하여 홈이 발생하는 부분을 제한하기 위하여 상기 외부 튜브의 양쪽 끝 부분을 다른 부분 보다 외경을 크게 하는 것을 특징으로 하는 저압 화학 기상 증착장치.Inner tubes in which chemical reactions occur; An outer tube surrounding the inner tube to maintain a low pressure; A finger fixing the heating wire for adjusting the temperature while surrounding the outer tube; And a projection formed at a predetermined position away from both ends of the outer tube in order to restrict the movement of the outer tube in a horizontal direction, wherein the outer tube and the finger are rubbed to generate a groove. Low-pressure chemical vapor deposition apparatus, characterized in that both ends of the outer tube to the outer diameter larger than the other portion to limit the portion. 제5항에 있어서, 상기 외부 튜브의 양쪽 끝 부분에서 증가된 외경은 1㎜ 이상인 것을 특징으로 하는 저압 화학 기상 증착 장치.6. The low pressure chemical vapor deposition apparatus according to claim 5, wherein the increased outer diameter at both ends of the outer tube is 1 mm or more. 제5항에 있어서, 동작시 상기 외부 튜브가 밀려서 누설이 발생하는 것을 방지하기 위하여 상기 외부 튜브와 상기 돌기 사이의 거리를 감소시키는 것을 특징으로 하는 저압 화학 기상 증착장치.6. The low pressure chemical vapor deposition apparatus according to claim 5, wherein the distance between the outer tube and the protrusion is reduced in order to prevent the outer tube from being pushed and causing leakage. 제7항에 있어서, 상기 외부 튜브와 상기 돌기 부분 사이의 거리는 5㎜ 이하인 것을 특징으로 하는 저압 화학 기상 증착장치.8. The low pressure chemical vapor deposition apparatus according to claim 7, wherein a distance between the outer tube and the protrusion is 5 mm or less. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950019040A 1995-06-30 1995-06-30 Lpcvd apparatus KR0168349B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950019040A KR0168349B1 (en) 1995-06-30 1995-06-30 Lpcvd apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950019040A KR0168349B1 (en) 1995-06-30 1995-06-30 Lpcvd apparatus

Publications (2)

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KR970003438A true KR970003438A (en) 1997-01-28
KR0168349B1 KR0168349B1 (en) 1999-02-01

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003079420A1 (en) * 2002-03-19 2003-09-25 Innovex. Inc. Evaporation source for deposition process and insulation fixing plate, and heating wire winding plate and method for fixing heating wire
KR101247494B1 (en) * 2011-07-13 2013-04-01 박효문 Cleaning headers for steam cleaning

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003079420A1 (en) * 2002-03-19 2003-09-25 Innovex. Inc. Evaporation source for deposition process and insulation fixing plate, and heating wire winding plate and method for fixing heating wire
KR101247494B1 (en) * 2011-07-13 2013-04-01 박효문 Cleaning headers for steam cleaning

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