KR970003289A - Giant magnetoresistive element and manufacturing method - Google Patents

Giant magnetoresistive element and manufacturing method Download PDF

Info

Publication number
KR970003289A
KR970003289A KR1019960019196A KR19960019196A KR970003289A KR 970003289 A KR970003289 A KR 970003289A KR 1019960019196 A KR1019960019196 A KR 1019960019196A KR 19960019196 A KR19960019196 A KR 19960019196A KR 970003289 A KR970003289 A KR 970003289A
Authority
KR
South Korea
Prior art keywords
magnetic
nonmagnetic
metal
magnetic metal
layer
Prior art date
Application number
KR1019960019196A
Other languages
Korean (ko)
Inventor
마코토 이지마
Original Assignee
세키사와 다다시
후지쓰 가부시키카이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세키사와 다다시, 후지쓰 가부시키카이샤 filed Critical 세키사와 다다시
Publication of KR970003289A publication Critical patent/KR970003289A/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/31Structure or manufacture of heads, e.g. inductive using thin films
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/80Constructional details
    • H10N50/85Magnetic active materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)

Abstract

약한 자기계에서 감도를 향상시키기 위하여 거대 자기저항 소자는 각각 1개의 자기층과 1개의 비자기층으로 되는 복수개의 자기/비자기 적충체 유니트로 이루어지는 자기 및 비자기층의 교대적인 적층체로 구성되며, 자기층이 자기금속의 다수의 미립자와 제1비자기금속의 매트릭스로 이루어지는 입자상 합금으로 구성되고, 상기 미립자는 단일의 자기영역을 형성하기 위하여 크기가 충분히 작고 자기층의 각 이웃하는 쌍간의 반강자성 커플링을 제공하는데 충분한 밀도로 매트릭스에 분산되며, 비자기층이 제2비자기금속으로 구성된다.In order to improve the sensitivity in the weak magnetic field, the giant magnetoresistive element is composed of alternating stacks of magnetic and nonmagnetic layers each consisting of a plurality of magnetic / nonmagnetic magnetic filler units each having one magnetic layer and one nonmagnetic layer. The layer consists of a particulate alloy consisting of a plurality of fine particles of magnetic metal and a matrix of a first non-magnetic metal, the fine particles being small enough to form a single magnetic region and having antiferromagnetic coupling between each neighboring pair of magnetic layers. The non-magnetic layer is composed of a second non-magnetic metal, which is dispersed in the matrix at a density sufficient to provide.

Description

거대 자기저항소자 및 그 제조방법Giant magnetoresistive element and manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 의한 거대 자기저항(giant magnetoresistive:GMR)소자의 개략 단면도, 제2도는 제1도에 도시한 GMR에 대한 자기저항(MR)곡선을 도시한 그래프, 제3도는 자기층을 형성하는 입상합금(granularalloy)의 Co함량의 함수로서 GMR소자의 MR비와 Hs를 도시한 그래프.1 is a schematic cross-sectional view of a giant magnetoresistive (GMR) device according to the present invention, and FIG. 2 is a graph showing a magnetoresistance (MR) curve with respect to GMR shown in FIG. 1, and FIG. Graph showing MR ratio and Hs of GMR element as a function of Co content of granular alloys formed.

Claims (11)

각각 1개의 자기층과 1개의 비자기층으로 되는 복수개의 자기/비자기 적층체 유니트로 이루어지는 자기 및 비자기층의 교대적인 적층체로 구성되며, 자기층이 자기금속의 다수의 미립자와 제1비자기금속의 매트릭스로 이루어지는 입자상 합금으로 구성되고, 상기 미립자는 단일의 자기영역을 형성하기 위하여 크기가 충분히 작고 자기층의 각 이웃하는 쌍간의 반강자성 커플링을 제공하는데 충분한 밀도로 매트릭스에 분산되며, 비자기층이 제2비자기금속으로 구성되는 거대 자기저항소자.It consists of alternating stacks of magnetic and nonmagnetic layers consisting of a plurality of magnetic / nonmagnetic stack units each comprising one magnetic layer and one nonmagnetic layer, the magnetic layer comprising a plurality of fine particles of magnetic metal and a first nonmagnetic metal Composed of a matrix alloy consisting of a matrix, the particulates being small enough to form a single magnetic region and dispersed in the matrix at a density sufficient to provide antiferromagnetic coupling between each neighboring pair of magnetic layers, Giant magnetoresistive element consisting of a second non-magnetic metal. 제1항에 있어서, 입자상 합금이 입자상 합금중의 자기금속의 농도로 55~80at%의 밀도에서의 자기금속의 미립자를 포함하는 거대 자기저항소자.The large magnetoresistive element according to claim 1, wherein the particulate alloy includes fine particles of magnetic metal at a density of 55 to 80 at% at a concentration of the magnetic metal in the particulate alloy. 제1항에 있어서, 교대적인 적층체가 5~7개의 자기/비자기 적층체 유니트로 구성되는 거대 자기저항소자.2. The giant magnetoresistive element of claim 1, wherein the alternating stack consists of 5 to 7 magnetic / nonmagnetic stack units. 제1항에 있어서, 교대적인 적층체가 400Å 이하의 두께를 갖는 거대 자기저항소자.The giant magnetoresistive element according to claim 1, wherein the alternating laminate has a thickness of 400 GPa or less. 제1항에 있어서, 자기금속이 Ni, Co, Fe 및 그 합금으로 이루어지는 군에서 선택되는 거대 자기저항소자.The large magnetoresistive element according to claim 1, wherein the magnetic metal is selected from the group consisting of Ni, Co, Fe, and alloys thereof. 제1항에 있어서, 매트릭스를 구성하는 제1비자기금속과 비자기층을 구성하는 제2비자기금속이 Cu, Ag, Au, Pt 및 그 합금으로 이루어지는 군에서 선택되는 거대 자기저항소자.The large magnetoresistive element according to claim 1, wherein the first nonmagnetic metal constituting the matrix and the second nonmagnetic metal constituting the nonmagnetic layer are selected from the group consisting of Cu, Ag, Au, Pt, and alloys thereof. 각각 1개의 자기층과 1개의 비자기층으로 되는 복수개의 자기/비자기 적층체 유니트로 이루어지는 자기 및 비자기층의 교대적인 적층체로 구성되며, 자기층이 자기금속의 다수의 미립자와 제1비자기금속의 매트릭스로 이루어지는 입자상 합금으로 구성되고, 상기 미립자는 단일의 자기영역을 형성하기 위하여 크기가 충분히 작고 자기층의 각 이웃하는 쌍간의 반강자성 커플링을 제공하는데 충분한 밀도로 매트릭스에 분산되며, 비자기층이 제2비자기금속으로 구성되는 거대 자기저항소자로 이루어지는 자기센서.It consists of alternating stacks of magnetic and nonmagnetic layers consisting of a plurality of magnetic / nonmagnetic stack units each comprising one magnetic layer and one nonmagnetic layer, the magnetic layer comprising a plurality of fine particles of magnetic metal and a first nonmagnetic metal Composed of a matrix alloy consisting of a matrix, the particulates being small enough to form a single magnetic region and dispersed in the matrix at a density sufficient to provide antiferromagnetic coupling between each neighboring pair of magnetic layers, A magnetic sensor comprising a large magnetoresistive element composed of a second nonmagnetic metal. 제7항에 있어서, 입자상 합금이 입자상 합금중의 자기금속의 농도로 55~80at%의 밀도에서의 자기금속의 미립자를 포함하는 자기센서.The magnetic sensor according to claim 7, wherein the particulate alloy comprises fine particles of magnetic metal at a density of 55 to 80 at% at a concentration of the magnetic metal in the particulate alloy. 자기금속 및 제1비자기금속의 고체용액의 제1층과 제2비자기금속의 제2층을 기판상에 교대적으로 퇴적하여 이렇게 퇴적된 적층체를 형성하고, 자기금속은 자기금속의 다수개의 미립자의 수반하는 밀도에 상응하는 양으로 고체용액에 존재하며, 상기 의 적층체를 연처리하여 제1층에서는 자기금속을 고체용액에서 침전시켜 각각 단일의 자기영역을 형성하도록 침전시켜 각각 단일의 자기영역을 형성하도록 크기가 충분히 작고 제1비자기금속의 매트릭스에 분산되는, 자기금속의 다수의 미립자를 형성하고, 이 다수의 미립자와 매트릭스는 입자상 합금으로 구성되며, 이것에 의하여 입자상 합금의 자기층과 제2비자기금속의 비자기층의 교대적인 적층체를 형성하는 거대 자기저항소자의 제조방법.The first layer of the solid solution of the magnetic metal and the first non-magnetic metal and the second layer of the second non-magnetic metal are alternately deposited on the substrate to form a laminate thus deposited, and the magnetic metal is a plurality of fine particles of the magnetic metal. It is present in the solid solution in an amount corresponding to the density of. In the first layer, the laminate is soft-treated to precipitate the magnetic metal in the solid solution to form a single magnetic region, respectively. Forming a plurality of fine particles of the magnetic metal, small enough in size and dispersed in a matrix of the first non-magnetic metal, the plurality of fine particles and the matrix consisting of a particulate alloy, thereby forming a magnetic layer and a first 2 A method for manufacturing a giant magnetoresistive element which forms an alternate stack of nonmagnetic layers of nonmagnetic metal. 제9항에 있어서, 제1비자기금속의 매트릭스에 자기금속의 다수의 미립자의 밀도가 고체용액중의 자기금속의 양으로 55~80at%인 거대 자기저항소자의 제조방법.10. The method of manufacturing a large magnetoresistive element according to claim 9, wherein the density of the plurality of fine particles of the magnetic metal in the matrix of the first non-magnetic metal is 55 to 80 at% by the amount of the magnetic metal in the solid solution. 제9항에 있어서, 교대적인 퇴적단계가 스퍼터링, 이온빔 스퍼터링, 및 분자 빔 에피택시중 어느 것으로 실행되는 거대 자기저항소자의 제조방법10. The method of manufacturing a large magnetoresistive element according to claim 9, wherein the alternate deposition step is performed by any one of sputtering, ion beam sputtering, and molecular beam epitaxy. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019960019196A 1995-06-01 1996-05-31 Giant magnetoresistive element and manufacturing method KR970003289A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-135014 1995-06-01
JP13501495 1995-06-01

Publications (1)

Publication Number Publication Date
KR970003289A true KR970003289A (en) 1997-01-28

Family

ID=15141921

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960019196A KR970003289A (en) 1995-06-01 1996-05-31 Giant magnetoresistive element and manufacturing method

Country Status (3)

Country Link
KR (1) KR970003289A (en)
DE (1) DE19622040A1 (en)
GB (1) GB2301710B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19755673A1 (en) * 1997-12-15 1999-07-01 Siemens Ag Magnetoresistive sensor device, especially for non-contact rotary and linear position generator or magnetic field sensor
DE19820770A1 (en) * 1998-05-08 1999-11-11 Max Planck Gesellschaft Electrochemical coating of a substrate or an article, and an article with such a coating
JP3544141B2 (en) * 1998-05-13 2004-07-21 三菱電機株式会社 Magnetic detecting element and magnetic detecting device
DE19854713B4 (en) * 1998-05-13 2005-03-10 Mitsubishi Electric Corp Magnetic field sensing element
US6239595B1 (en) 1998-05-13 2001-05-29 Mitsubishi Denki Kabushiki Kaisha Magnetic field sensing element
JP3562993B2 (en) * 1999-04-13 2004-09-08 三菱電機株式会社 Magnetic detector
CN108022714B (en) * 2016-10-31 2021-06-08 北京北方华创微电子装备有限公司 Soft magnetic film and preparation method thereof
CN115584476A (en) * 2022-10-21 2023-01-10 河北建筑工程学院 Discontinuous nano magnetic metal multilayer film and preparation method thereof
CN118168583B (en) * 2024-05-15 2024-09-03 贵州航天计量测试技术研究所 Magnetic line concentrator and giant magneto-resistance line staggered magnetic biosensor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07508133A (en) * 1992-06-16 1995-09-07 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Giant magnetoresistive single film alloy
JPH0779034A (en) * 1993-04-13 1995-03-20 Matsushita Electric Ind Co Ltd Magnetoresistive effect device
JP2807398B2 (en) * 1993-08-03 1998-10-08 和明 深道 Magnetoresistance effect material, method of manufacturing the same, and magnetoresistance element

Also Published As

Publication number Publication date
GB2301710B (en) 1999-06-09
DE19622040A1 (en) 1996-12-12
GB9611390D0 (en) 1996-08-07
GB2301710A (en) 1996-12-11

Similar Documents

Publication Publication Date Title
KR0139307B1 (en) Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system
EP0498344B2 (en) Magnetoresistance effect element
US6510031B1 (en) Magnetoresistive sensor with magnetostatic coupling to obtain opposite alignment of magnetic regions
US6636389B2 (en) GMR magnetic transducer with nano-oxide exchange coupled free layers
DE69504923T2 (en) Magnetic resistance sensor with self-polarized multi-layer system
US5955211A (en) Magnetoresistive film
GB2422714A (en) CPP giant magnetoresistive element
JP2010153895A (en) Magnetoresistive multiple layer device and sensor element
EP1181693A1 (en) Magnetic device with a coupling layer and method of manufacturing and operation of such device
US7158354B2 (en) Dual-type magnetic detecting element in which free magnetic layer and pinned magnetic layer have suitably selected β values
US5493465A (en) Magnetoresistance effect element and magnetic recording apparatus
US5657191A (en) Stabilization of giant magnetoresistive transducers
KR100304770B1 (en) Magnetoresistive effect film and method of manufacture thereof
KR970003289A (en) Giant magnetoresistive element and manufacturing method
GB2424750A (en) Magnetic sensing element
GB2419732A (en) Magnetic sensing element with increased rate of change of magnetoresistance
US20050128651A1 (en) Spin polarization enhancement artificial magnet
JPH0954916A (en) Spin valve magnetoresistive transducer and magnetic recording device
RU2316783C2 (en) Magneto-resistive layered system and sensitive element on basis of such a layered system
US6144524A (en) Spin valve magnetoresistance device and method of designing the same
KR100363462B1 (en) Spin valve type magnetoresistive effect element and manufacturing method thereof
EP0620572B1 (en) Element having magnetoresistive effect
US20050013060A1 (en) Magnetoresistive sensor
JP2000114618A (en) Thin film structure of magnetic field sensitive sensor having magnetoresistance multilayer system with spin dependence of electron scattering
US7170720B2 (en) CPP read head for high density and shield noise suppression

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application