KR970002452A - Photomask Manufacturing Method for Semiconductor Device Manufacturing - Google Patents

Photomask Manufacturing Method for Semiconductor Device Manufacturing Download PDF

Info

Publication number
KR970002452A
KR970002452A KR1019950016029A KR19950016029A KR970002452A KR 970002452 A KR970002452 A KR 970002452A KR 1019950016029 A KR1019950016029 A KR 1019950016029A KR 19950016029 A KR19950016029 A KR 19950016029A KR 970002452 A KR970002452 A KR 970002452A
Authority
KR
South Korea
Prior art keywords
light blocking
manufacturing
spacer
photomask
forming material
Prior art date
Application number
KR1019950016029A
Other languages
Korean (ko)
Inventor
김형수
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950016029A priority Critical patent/KR970002452A/en
Publication of KR970002452A publication Critical patent/KR970002452A/en

Links

Abstract

본 발명은 반도체 소자 제조용 포토 마스크에 관한 것으로, 특히 마스크의 석영기판 일측 상부면에 크롬으로 된 광차단막 패턴을 형성한 종래의 포토 마스크 상부에 미세 광차단막 패턴을 형성하기 스페이서 형성물질을 증착한 후, 상기 스페이서 형성물질을 비등방성 식각하여 광차단막 패턴의 측벽에 스페이서를 형성함으로써 종래의 노광장비의 이-빔 노광기술을 이용하여 제작할 수 없는 미세한 패턴간격을 갖는 포토 마스크를 제작할 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photomask for manufacturing a semiconductor device, and in particular, after depositing a spacer forming material to form a fine light blocking layer pattern on a conventional photo mask in which a light blocking layer pattern of chromium is formed on one surface of a quartz substrate of a mask. By forming an spacer on the sidewall of the light blocking layer pattern by anisotropically etching the spacer forming material, a photo mask having a fine pattern interval which cannot be manufactured by using an e-beam exposure technique of a conventional exposure apparatus can be manufactured.

Description

반도체 소자 제조용 포토 마스크 제작방법Photomask Manufacturing Method for Semiconductor Device Manufacturing

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A와 제2B도는 본 발명의 기술에 따른 포토 마스크의 제작 공정도.2A and 2B are manufacturing process diagrams of a photo mask according to the technique of the present invention.

Claims (4)

반도체 소자 제조용 포토 마스크 제작방법에 있어서, 하부 석영기판 상부에 주사되는 광을 차단하는 광차단막을 증착하는 공정과, 상기 광차단막을 식각하여 소정부위의 광을 부분적으로 차단하는 광차단막 패턴을 형성하는 공정과, 상기 전체구조 상부에 광차단막 패턴 간격을 미세하게 형성하기 위한 스페이서 형성물질을 증착하는 공정과, 상기 스페이서 형성물질을 비등방성 식각하여 상기 광차단막 패턴의 측벽에 스페이서를 형성하는 공정을 구비하는 것을 특징으로 하는 반도체 소자의 포토 마스크 제작방법.A method of fabricating a photomask for manufacturing a semiconductor device, comprising: depositing a light blocking film that blocks light scanned on an upper portion of a lower quartz substrate; And depositing a spacer forming material for finely forming a light blocking film pattern gap on the entire structure, and forming an spacer on a sidewall of the light blocking film pattern by anisotropically etching the spacer forming material. The photomask manufacturing method of a semiconductor element characterized by the above-mentioned. 제1항에 있어서, 상기 광차단막 패턴은 크롭으로 형성된 것을 특징으로 하는 반도체 소자의 포토 마스크 제작방법.The method of claim 1, wherein the light blocking layer pattern is formed as a crop. 제1항에 있어서, 상기 스페이서 형성물질은 노광장비의 노광 빔을 차단할 수 있는 물질로서, 크롬, 크롬옥사이드, 알루미늄, 텅스텐 중 어느 하나인 것을 특징으로 하는 반도체 소자의 포토 마스크 제작방법.The method of claim 1, wherein the spacer forming material is a material capable of blocking an exposure beam of an exposure apparatus and is any one of chromium, chromium oxide, aluminum, and tungsten. 제1항에 있어서, 상기 포토 마스크는 파장이 60~100nm 범위의 노광장비에 사용되는 콘벤셔널 마스크 또는 위상변조 마스크인 것을 특징으로 하는 반도체 소자의 포토 마스크 제작방법.The method of claim 1, wherein the photo mask is a conventional mask or a phase modulation mask used in exposure equipment having a wavelength in a range of 60 to 100 nm. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950016029A 1995-06-16 1995-06-16 Photomask Manufacturing Method for Semiconductor Device Manufacturing KR970002452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950016029A KR970002452A (en) 1995-06-16 1995-06-16 Photomask Manufacturing Method for Semiconductor Device Manufacturing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950016029A KR970002452A (en) 1995-06-16 1995-06-16 Photomask Manufacturing Method for Semiconductor Device Manufacturing

Publications (1)

Publication Number Publication Date
KR970002452A true KR970002452A (en) 1997-01-24

Family

ID=66524498

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950016029A KR970002452A (en) 1995-06-16 1995-06-16 Photomask Manufacturing Method for Semiconductor Device Manufacturing

Country Status (1)

Country Link
KR (1) KR970002452A (en)

Similar Documents

Publication Publication Date Title
US5567553A (en) Method to suppress subthreshold leakage due to sharp isolation corners in submicron FET structures
KR920007141A (en) How to make a mask alignment mark
KR950033661A (en) Thin phase transition mask
KR100348902B1 (en) Method of manufacturing a gamma gate of hemt
JPH10330188A (en) Fine processing of diamond
GB2302962A (en) Phase shift mask
US6569581B2 (en) Alternating phase shifting masks
KR0127662B1 (en) Method for fabricating phase shift mask of semiconductor device
KR0128827B1 (en) Fabrication method of phase shift mask
KR970002452A (en) Photomask Manufacturing Method for Semiconductor Device Manufacturing
GB2291982A (en) Photo masks
KR970013040A (en) Semiconductor device manufacturing method
KR920015428A (en) Mask manufacturing method
US6350547B1 (en) Oxide structure having a finely calibrated thickness
KR930018675A (en) Phase inversion mask and manufacturing method thereof
JPH07198922A (en) Formation of diffraction grating
JPH05197127A (en) Phase shift mask
KR100277896B1 (en) Mask manufacturing method of semiconductor device
US5718990A (en) Semiconductor mask and method of manufacturing the same
KR960002507A (en) Mask and manufacturing method thereof
KR0127659B1 (en) Method for fabricating phase shift mask of semiconductor device
KR0126650B1 (en) Fabricating method for half-tone type phase shift mask
KR970022517A (en) Photomask and its manufacturing method
KR950012596A (en) Manufacturing Method of Semiconductor Device
KR950021041A (en) Deformed unresolution diffraction mask structure and fabrication method

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination