KR970002452A - Photomask Manufacturing Method for Semiconductor Device Manufacturing - Google Patents
Photomask Manufacturing Method for Semiconductor Device Manufacturing Download PDFInfo
- Publication number
- KR970002452A KR970002452A KR1019950016029A KR19950016029A KR970002452A KR 970002452 A KR970002452 A KR 970002452A KR 1019950016029 A KR1019950016029 A KR 1019950016029A KR 19950016029 A KR19950016029 A KR 19950016029A KR 970002452 A KR970002452 A KR 970002452A
- Authority
- KR
- South Korea
- Prior art keywords
- light blocking
- manufacturing
- spacer
- photomask
- forming material
- Prior art date
Links
Abstract
본 발명은 반도체 소자 제조용 포토 마스크에 관한 것으로, 특히 마스크의 석영기판 일측 상부면에 크롬으로 된 광차단막 패턴을 형성한 종래의 포토 마스크 상부에 미세 광차단막 패턴을 형성하기 스페이서 형성물질을 증착한 후, 상기 스페이서 형성물질을 비등방성 식각하여 광차단막 패턴의 측벽에 스페이서를 형성함으로써 종래의 노광장비의 이-빔 노광기술을 이용하여 제작할 수 없는 미세한 패턴간격을 갖는 포토 마스크를 제작할 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photomask for manufacturing a semiconductor device, and in particular, after depositing a spacer forming material to form a fine light blocking layer pattern on a conventional photo mask in which a light blocking layer pattern of chromium is formed on one surface of a quartz substrate of a mask. By forming an spacer on the sidewall of the light blocking layer pattern by anisotropically etching the spacer forming material, a photo mask having a fine pattern interval which cannot be manufactured by using an e-beam exposure technique of a conventional exposure apparatus can be manufactured.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2A와 제2B도는 본 발명의 기술에 따른 포토 마스크의 제작 공정도.2A and 2B are manufacturing process diagrams of a photo mask according to the technique of the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950016029A KR970002452A (en) | 1995-06-16 | 1995-06-16 | Photomask Manufacturing Method for Semiconductor Device Manufacturing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950016029A KR970002452A (en) | 1995-06-16 | 1995-06-16 | Photomask Manufacturing Method for Semiconductor Device Manufacturing |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970002452A true KR970002452A (en) | 1997-01-24 |
Family
ID=66524498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950016029A KR970002452A (en) | 1995-06-16 | 1995-06-16 | Photomask Manufacturing Method for Semiconductor Device Manufacturing |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970002452A (en) |
-
1995
- 1995-06-16 KR KR1019950016029A patent/KR970002452A/en not_active Application Discontinuation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5567553A (en) | Method to suppress subthreshold leakage due to sharp isolation corners in submicron FET structures | |
KR920007141A (en) | How to make a mask alignment mark | |
KR950033661A (en) | Thin phase transition mask | |
KR100348902B1 (en) | Method of manufacturing a gamma gate of hemt | |
JPH10330188A (en) | Fine processing of diamond | |
GB2302962A (en) | Phase shift mask | |
US6569581B2 (en) | Alternating phase shifting masks | |
KR0127662B1 (en) | Method for fabricating phase shift mask of semiconductor device | |
KR0128827B1 (en) | Fabrication method of phase shift mask | |
KR970002452A (en) | Photomask Manufacturing Method for Semiconductor Device Manufacturing | |
GB2291982A (en) | Photo masks | |
KR970013040A (en) | Semiconductor device manufacturing method | |
KR920015428A (en) | Mask manufacturing method | |
US6350547B1 (en) | Oxide structure having a finely calibrated thickness | |
KR930018675A (en) | Phase inversion mask and manufacturing method thereof | |
JPH07198922A (en) | Formation of diffraction grating | |
JPH05197127A (en) | Phase shift mask | |
KR100277896B1 (en) | Mask manufacturing method of semiconductor device | |
US5718990A (en) | Semiconductor mask and method of manufacturing the same | |
KR960002507A (en) | Mask and manufacturing method thereof | |
KR0127659B1 (en) | Method for fabricating phase shift mask of semiconductor device | |
KR0126650B1 (en) | Fabricating method for half-tone type phase shift mask | |
KR970022517A (en) | Photomask and its manufacturing method | |
KR950012596A (en) | Manufacturing Method of Semiconductor Device | |
KR950021041A (en) | Deformed unresolution diffraction mask structure and fabrication method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Withdrawal due to no request for examination |