KR970002434B1 - Oxide film forming method of semiconductor device - Google Patents
Oxide film forming method of semiconductor device Download PDFInfo
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- KR970002434B1 KR970002434B1 KR1019930029790A KR930029790A KR970002434B1 KR 970002434 B1 KR970002434 B1 KR 970002434B1 KR 1019930029790 A KR1019930029790 A KR 1019930029790A KR 930029790 A KR930029790 A KR 930029790A KR 970002434 B1 KR970002434 B1 KR 970002434B1
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- gas
- oxide film
- oxidation
- semiconductor device
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 40
- 239000007789 gas Substances 0.000 claims abstract description 39
- 230000003647 oxidation Effects 0.000 claims abstract description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 16
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000007865 diluting Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
본 발명은 반도체 소자의 산화막 형성방법에 관한 것으로, 특히 반도체 소자의 제조공정 중 게이트 산화막 또는 캐패시터의 유전체막으로 산화막을 형성할 때, 주산화공정(Main Oxidation)공정에서 산화튜브내의 개스분위기를 N2O개스에 NH3개스를 희석한 상태로 산화막을 성장시키며, 주산화 공정 전후에 실시하는 전산화(Pre. Oxidation) 및 후산화(Post. Oxidation)시에는 N2O 개스를 사용하므로써, 양질의 산화막을 얻을 수 있어 소자의 신뢰도를 향상시킬 수 있는 반도체 소자의 산화막 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming an oxide film of a semiconductor device. In particular, when the oxide film is formed of a gate oxide film or a dielectric film of a capacitor during a semiconductor device manufacturing process, the gas atmosphere in the oxide tube in the main oxide process is N. The oxide film is grown in a state of diluting NH 3 gas in 2 O gas, and N 2 O gas is used for pre-oxidation and post-oxidation before and after the main oxidation process. The present invention relates to a method for forming an oxide film of a semiconductor device capable of obtaining an oxide film and improving the reliability of the device.
일반적으로, 반도체 소자의 게이트 산화막의 절연강도를 높이기 위하여 산화막 내에 질소를 도입시키는 방법을 사용하고 있다.In general, a method of introducing nitrogen into the oxide film is used to increase the insulation strength of the gate oxide film of the semiconductor device.
종래에는 NH3개스를 사용하는 방법이 있으나, 이 방법은 NH3가 포함하고 있는 수소원자에 의하여 산화막의 장기 신뢰성(Long-term Reliability)이 오히려 나빠지는 문제점이 있고, 다른 방법으로 N2O 개스를 이용하여 질소도입을 시도하고 있으나 N2O의 높은 활성화에너지 때문에 고온공정이 필요하고, 또한 산화비(Oxidation Rate)와 질소(N)도입량을 독립적으로 제어할 수 없다는 문제가 있다.Conventionally, there is a method of using NH 3 gas, but this method has a problem that the long-term reliability of the oxide film is rather deteriorated by the hydrogen atom contained in NH 3 , and another method is N 2 O gas. Although attempting to introduce nitrogen by using the high temperature of the N 2 O activating energy is required because of the high temperature process, there is also a problem that can not independently control the oxidation rate (Oxidation Rate) and nitrogen (N) introduction amount.
즉, N2O 개스는 산화튜브내에서 N2, O2, NO로 분해된다. 이들 성분은 950℃ 온도에서는 64.3%의 N2, 31.0%의 O2그리고 4.7%의 NO로 구성된다. 질소도입에는 NO가 필요한데 4.7%의 미량으로만 분해되고, 이들 대부분은 2NO+O2→2NO2의 반응에 의하여 소멸되므로 질소도입량은 O2와의 반응정도에 따라 크게 달라져 산화비와 질소 도입량을 독립적으로 제어할 수 없다. 또한 질소 도입량의 상한계가 낮다.That is, N 2 O gas decomposes into N 2 , O 2 , and NO in the oxide tube. These components consist of 64.3% N 2 , 31.0% O 2 and 4.7% NO at 950 ° C. Nitrogen introduction requires NO, but only 4.7% of it is decomposed, and most of them are extinguished by the reaction of 2NO + O 2 → 2NO 2 , so the amount of nitrogen introduction varies greatly depending on the degree of reaction with O 2. Can not be controlled. Moreover, the upper limit of nitrogen introduction amount is low.
따라서, 본 발명은 상기한 문제를 해결하기 위하여 질소도입 개스원자(Source Gas)인 NH3개스를 N2O개스에 희석하여 질소도입 및 산화를 동시에 제어하므로써 양질의 산화막을 얻을 수 있도록 한 반도체 소자의 산화막 형성방법을 제공함에 그 목적이 있다.Therefore, in order to solve the above problem, the semiconductor device is capable of obtaining a high-quality oxide film by simultaneously controlling nitrogen introduction and oxidation by diluting NH 3 gas, which is a nitrogen gas source source, to N 2 O gas. It is an object of the present invention to provide a method for forming an oxide film.
이하, 본 발명을 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail.
본 발명은 게이트 산화막 또는 캐패시터의 유전체막 등으로 사용되는 산화막을 형성하는 방법으로 하기 표 1을 참조하여 설명하기로 한다.The present invention will be described with reference to Table 1 below as a method for forming an oxide film used as a gate oxide film or a dielectric film of a capacitor.
상기 표 1에 의하면, 산화막을 형성시킬 웨이퍼를 700℃, N개스분위기의 산화튜브내의 장착(Push)한 후 진공(Pump Down)시킨 다음 리크체크(Leak Check)하고, 이후 튜브내를 N개스분위기로 한 상태에서 900℃로 온도상승(Ramp Up) 및 안정화(Temperature Stabilization)공정을 진행하고, 산화막을 성장시키기 위해 튜브내를 NO 개스분위기 하에서 전산화(Pre, Oxidation), NO 및 NH개스분위기하에서 주산화(Main OXidation), 다시 NO 개스분위기하에서 후산화(Post OXidation)공정을 실시하여 산화막을 형성하고 700℃로 온도를 하강(Ramp Down)하면서 튜브내 개스분위기를 N로 하고, 이후 백필(Back Fill) 및 꺼냄(Pull) 공정으로 산화막 형성공정을 완료한다.According to Table 1, the wafer on which the oxide film is to be formed is pushed into the oxide tube of an N gas atmosphere at 700 ° C., vacuumed down, and leak checked, and then the N atmosphere is heated in the tube. Ramp Up and Temperation Stabilization process at 900 ° C, and pre-oxidation, NO, and NH gas atmospheres under NO gas atmosphere in the tube to grow oxide film. Oxidation (Main Oxidation) and Post Oxidation process under NO gas atmosphere to form an oxide film, and the gas atmosphere in the tube is set to N while ramping down the temperature to 700 ° C. ) And a pull process to complete the oxide film forming process.
상기 공정에서 공정온도, 압력 및 유동비(Flow Rate)는 공정티켓(Target)에 따라 달라질 수 있다.In the process, the process temperature, pressure, and flow rate may vary depending on the process ticket.
상기한 바에 의거한 본 발명은 주산화공정인 NO와 NH혼합개스에 의한 산화공정 전후에 NO만으로 산화공정을 수행하는 전산화공정과 후산화공정을 추가 수행하는데, 전사화공정은 웨이퍼의 기판이 산화되기전에 바로 질화(Nitridation)되는 것을 방지하기 위함이고, 후산화공정은 잔류되는 NH가 주산화공정으로 성장된 산화막내로 침투하여 수소(H)에 의한 계면 특성 저하를 방지하기 위함이다.In accordance with the present invention, the present invention additionally performs a pre-oxidation step and a post-oxidation step of performing an oxidation step only with NO before and after the oxidation step by the NO and NH mixed gas, which are main oxidation processes. This is to prevent nitriding immediately before the end, and the post-oxidation process is to prevent degradation of interfacial properties due to hydrogen (H) due to penetration of residual NH into the oxide film grown by the main oxidation process.
주산화공정식 NH개스를 NO개스에 희석시키되, 이때 NH개스의 비율은 5∼20% 정도가 적당하다. 상기 NH개스는 낮은 활성화에너지 때문에 산화막속으로의 질소도입량이 NH의 양에 의하여 주로 결정된다. 따라서 소량의 NH개스를 NO에 희석시켜 사용하므로써 충분한 양의 질소를 산화막속에 도입시킬 수 있을 뿐만 아니라 도입되는 질소의 양을 NH개스의 비율 조절에 의하여 제어할 수 있다. 그리고 NH개스 사용할 때의 문제점인 수소(H)는 NO에서 분해되어 나온 산소(O)와 결합하여 습식산화제인 OH가 되어 산화공정에 기여하게 된다.The main oxidation NH gas is diluted with NO gas, but the NH gas ratio is suitably 5 to 20%. The amount of nitrogen introduced into the oxide film is mainly determined by the amount of NH because of the low activation energy. Therefore, by diluting and using a small amount of NH gas in NO, not only a sufficient amount of nitrogen can be introduced into the oxide film, but also the amount of nitrogen introduced can be controlled by adjusting the ratio of NH gas. Hydrogen (H), which is a problem when using NH gas, is combined with oxygen (O) decomposed from NO and becomes a wet oxidizer, OH, which contributes to the oxidation process.
이로써 산화공정과 동시에 산화막 내로의 질소도입이 이루어져 높은 신뢰성을 갖는 양질의 산화막을 얻을 수 있다.As a result, nitrogen is introduced into the oxide film at the same time as the oxidation process to obtain a high quality oxide film having high reliability.
상술한 바와 같이 본 발명의 산화막 형성 방법을 적용하면, 산화막 내의 질소도입에 의한 절연강도가 증가하고, NH개스의 양을 조절함에 의해 질소도입량을 용이하게 제어할 수 있으며, NH와 NO 혼합개스를 사용함에 의해 NH개스 사용할 때의 단점과 NO개스 사용할시의 단점을 동시에 개선할 수 있어 높은 신뢰성을 갖는 양질의 산화막을 얻을 수 있다.As described above, when the oxide film forming method of the present invention is applied, the insulation strength due to the introduction of nitrogen in the oxide film is increased, and the amount of nitrogen introduced can be easily controlled by adjusting the amount of NH gas. By using it, the disadvantages of using NH gas and the disadvantages of using NO gas can be improved at the same time, so that a high quality oxide film having high reliability can be obtained.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930029790A KR970002434B1 (en) | 1993-12-27 | 1993-12-27 | Oxide film forming method of semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930029790A KR970002434B1 (en) | 1993-12-27 | 1993-12-27 | Oxide film forming method of semiconductor device |
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| Publication Number | Publication Date |
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| KR950021208A KR950021208A (en) | 1995-07-26 |
| KR970002434B1 true KR970002434B1 (en) | 1997-03-05 |
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| KR1019930029790A KR970002434B1 (en) | 1993-12-27 | 1993-12-27 | Oxide film forming method of semiconductor device |
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| KR100332129B1 (en) * | 1995-12-29 | 2002-11-07 | 주식회사 하이닉스반도체 | Method for forming oxide layer in semiconductor device |
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