KR970002426Y1 - Apparatus for cleaning epitaxial chamber - Google Patents
Apparatus for cleaning epitaxial chamber Download PDFInfo
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- KR970002426Y1 KR970002426Y1 KR2019930020236U KR930020236U KR970002426Y1 KR 970002426 Y1 KR970002426 Y1 KR 970002426Y1 KR 2019930020236 U KR2019930020236 U KR 2019930020236U KR 930020236 U KR930020236 U KR 930020236U KR 970002426 Y1 KR970002426 Y1 KR 970002426Y1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Organic Chemistry (AREA)
Abstract
내용없음No content
Description
제1도는 종래 에피텍시장비의 온도콘트롤시 상태를 나타낸 구성도.1 is a block diagram showing a state during temperature control of a conventional epitaxy equipment.
제2도는 종래 에피텍시장비의 서스셉터 온도측정원리를 나타낸 종단면도.Figure 2 is a longitudinal sectional view showing the susceptor temperature measurement principle of conventional epitaxy equipment.
제3도는 본고안을 나타낸 종단면도.3 is a longitudinal cross-sectional view showing the subject matter.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 챔버 2 : 가스인젝터1: Chamber 2: Gas Injector
3 : 분사관3: injection pipe
본 고안은 에피텍시(Epitaxy)장비의 챔버세척장치에 관한 것으로서, 더욱 상세하게는 반도체 제조장비 중 에피텍시장비의 챔버에 증착된 규소화합물을 드라이세척으로 식각하여 제거시킬 수 있도록 한 것이다.The present invention relates to a chamber washing apparatus of epitaxy equipment, and more particularly, to remove and remove silicon compounds deposited in the chamber of epitaxy equipment by dry washing in semiconductor manufacturing equipment.
종래 에피텍시장비의 온도콘트롤시에는 제1도 및 제2도에 나타낸 바와 같이 챔버(1)의 윈도우(5)를 통해 웨이퍼(도시는 생략함)를 로딩하는 서스셉터(Susceptor)(4)의 온도를 상기 챔버(1)상의 온도센서(6)로서 측정하게 되고 제1도의 자동온도조절부(Autormatic Temperature Control)에서는 온도센서가 감지한 온도값과 콘트롤로직(Control Logic)에 입력된 온도값을 비교하여 차이가 나는 값만큼, 알에프제네레이터(R-F Generator)의 파워(Power)값을 조절하게 되며, 파워값의 조절에 따라 챔버(1)내의 온도가 자동으로 조절된다.In the temperature control of a conventional epitaxy device, a susceptor 4 for loading a wafer (not shown) through the window 5 of the chamber 1 as shown in FIGS. 1 and 2. Temperature is measured as the temperature sensor 6 on the chamber 1, and in the automatic temperature control unit of FIG. 1, the temperature value detected by the temperature sensor and the temperature value input to the control logic. By comparing the difference, the power value of the RF generator (RF Generator) is adjusted, and the temperature in the chamber 1 is automatically adjusted according to the adjustment of the power value.
한편 에피텍시 성장은 웨이퍼를 상기 서스셉터(4)상에 로딩하여 챔버(1)내에 설치된 가스인젝터(2)의 가스분사를 통해 규소가 성장되는데, 이때 웨이퍼에는 규소가 성장되지만, 웨이퍼가 로딩되지 않은 서스셉터(4) 부위에도 증착(Coating)됨과 동시에 일부가스가 챔버(1)에도 증착하게 된다.On the other hand, epitaxial growth is carried out by loading a wafer onto the susceptor 4 and growing silicon through the gas injection of the gas injector 2 installed in the chamber 1, wherein silicon is grown on the wafer, but the wafer is loaded. At the same time as the deposition (Coating) to the unsustained susceptor (4) portion, some gas is also deposited in the chamber (1).
제1도에서 가스판넬(Gas Panel)은 공정에 필요한 가스량을 조절하는 역할을 하고 메인콘트롤 판넬(Main Control Panel)은 공정에 필요한 모든 정보를 입력하고 디스플레이하는 역할을 한다.In FIG. 1, a gas panel serves to control the amount of gas required for a process, and a main control panel serves to input and display all information required for a process.
상기와 같은 장치에서 에피텍시 성장 때 서스셉터(4) 및 챔버(1)내에 증착된 것은 약70∼100㎛ 에피텍시 성장 후 Hcl+H2가스를 이용하여 식각 시키면, 상기 서스셉터(4)에 증착된 규소는 완전히 식각되나, 침버(1)내에 증착된 규소는 완전히 제거되지 않게되며, 챔버(1)에 증착된 규소화합물은 온도콘트롤 및 파티클 발생에 영향을 주므로 70㎛ 에피텍시 성장 후 윈도우(5)를 불소를 사용하여 무딘세척지에 불소를 묻혀서 수동적인 방법으로 윈도우(5)를 닦아주고 1000㎛ 에피텍시 성장 후에는 상기 챔버(1)를 장비에서 분해하여 챔버 세척기에서 웨트크리닝하게 된다. 그러나, 이와 같은 종래의 챔버(1)내에 증착된 규소화합물을 가스인젝터(2)로 세척할 때에는 분사구 위치가 멀기 때문에 드라이세척방법으로 서스셉터(4)의 규소는 식각되지만, 챔버(1)내에 증착된 규소화합물은 완전히 제거되지 않으므로 챔버(1)의 윈도우(5)를 통한 온도감지능력이 떨어져서 온도변화가 심해 증착된 정도에 따라 50 까지 차이가 나서 에피텍시 균일도(Quality)에 영향을 미치고, 윈도우(5)를 70㎛ 에피텍시 성장 후 수동적인 방법으로 불소로 세척해 주어야 하므로 불안전한 작업을 하게 될 뿐만 아니라 챔버(1)를 분해하여 웨트크리닝을 1000㎛ 에피텍시 성장 후 실시해야 하므로 장비의 가동률이 저하되는 등의 문제점이 있었다.Deposition in the susceptor 4 and the chamber 1 during epitaxy growth in such a device is etched using Hcl + H 2 gas after epitaxial growth of about 70 ~ 100㎛, the susceptor (4) The silicon deposited on the etch is completely etched, but the silicon deposited on the chamber 1 is not completely removed, and the silicon compound deposited on the chamber 1 affects temperature control and particle generation, so that 70 µm epitaxial growth After cleaning the window (5) by manual method by fluorine dull cleaning paper using fluorine on the window (5), and after 1000㎛ epitaxy growth, the chamber (1) is disassembled from the equipment and wet-cleaned in a chamber washer. Done. However, when the silicon compound deposited in the conventional chamber 1 is washed with the gas injector 2, the position of the injection hole is far, so that the silicon of the susceptor 4 is etched by the dry washing method, but the inside of the chamber 1 is etched. Since the deposited silicon compound is not completely removed, the temperature sensing ability through the window 5 of the chamber 1 is inferior, and thus the temperature change is severe and varies by 50 depending on the degree of deposition, which affects the epitaxial uniformity. In addition, the window 5 must be cleaned with fluorine in a passive manner after the growth of 70 µm epitaxy, which is not only an unsafe operation, but also the wet cleaning by disassembling the chamber 1 to be performed after the growth of 1000 µm epitaxy. Therefore, there was a problem such as lowering the operation rate of the equipment.
본고안은 상기한 제반 문제점을 해결하기위한 것으로서, 본공안은 에피텍시장비의 챔버에 증착된 규소화합물을 드라이세척으로 식각해서 효율적으로 제거시킬 수 있도록 하여 안전한 상태에서 용이하고 신속하게 세척작업을 수행할 수 있을 뿐만 아니라, 장비의 가동효율을 향상시킬 수 있는 에피텍시장비의 챔버세척장치를 제공하는데 그 목적이 있다.The purpose of this paper is to solve the above problems. The purpose of the present invention is to dry-etch the silicon compound deposited in the chamber of epitaxy equipment by dry cleaning, so that cleaning work can be performed easily and quickly in a safe state. In addition to being able to perform, the object of the present invention is to provide a chamber washing apparatus of epitaxy equipment that can improve the operating efficiency of the equipment.
상기한 목적을 달성하기 위해 본고안은 챔버에 설치된 가스인젝터에 챔버에 증착된 규소화합물을 세척시 가스를 분사하여 규소화합물을 식각시키기 위해 분사관이 착탈가능하게 설치된 에피텍시장비의 챔버세척장치이다.In order to achieve the above object, the present invention is a chamber washing apparatus of the epitaxial equipment, in which the injection pipe is detachably installed to etch the silicon compound by spraying the gas upon cleaning the silicon compound deposited in the chamber to the gas injector installed in the chamber. to be.
이하, 본고안의 일실시예를 첨부도면 제3도를 참조하여 상세히 설명하면 다음과 같다.Hereinafter, an embodiment of the present invention will be described in detail with reference to FIG. 3.
제3도는 본고안을 나타낸 종단면도로서, 에피텍시장비의 챔버(1)내에 설치된 가스인젝터(2)상에 챔버(1)에 증착된 규소화합물을 세척시 Hcl+H2가 스를 챔버(1)내의 상부인 윈도우에 가까운 곳에서 분사하여 규소화합물을 식각시키기 위해 분사관(3)이 착탈가능하게 설치되어 구성된다.The third turning chamber the chamber (1) a gas injector (2) for cleaning a silicon compound is deposited on the chamber 1 on the Hcl + H 2 the switch provided in the device when, epitaxy as a longitudinal cross-sectional view showing the subject innovation ( 1) The injection pipe 3 is detachably installed so as to etch the silicon compound by spraying near the upper window.
이와같이 구성된 본고안은 제3도에 나타낸 바와 같이, 에피텍시장비에 챔버(1) 내의 하부에 장착되어 있는 서스셉터(4)상에 로딩된 웨이퍼의 에피텍시 성장과 서스텝서(4)의 규소를 식각할 때에는 상기 챔버(1)내의 서스셉터(4) 중앙에 설치된 가스인젝터(2)로서 Hcl+H2가스를 분사하여 작업을 하게 되고, 챔버(1) 내에 증착된 규소화합물을 세척하고자 할 때에는 챔버(1) 내에 설치된 가스인젝터(2)상에 분사관(3)을 연결하여 Hcl+H2가스가 가스인젝터(2)를 통해 분사관(3)을 거쳐 상기 챔버(1) 내의 상부 윈도우(5)에 분사되어 규소화합물을 드라이세탁방법으로 식각시켜 효율적으로 제거할 수 있게 된다.In this manner, the present invention constructed as shown in FIG. 3 shows the epitaxial growth and the stepper 4 of the wafer loaded on the susceptor 4 mounted on the lower part of the chamber 1 in the epitaxial equipment. When etching the silicon, the gas injector 2 installed in the center of the susceptor 4 in the chamber 1 is sprayed with Hcl + H 2 gas, and the silicon compound deposited in the chamber 1 is washed. If desired, the injection tube 3 is connected to the gas injector 2 installed in the chamber 1 so that the Hcl + H 2 gas passes through the injection tube 3 through the gas injector 2 in the chamber 1. Sprayed to the upper window (5) it is possible to efficiently remove the silicon compound by etching by dry washing method.
따라서, 챔버(1)의 윈도우(5)가 깨끗한 상태이므로 인해 에피텍시온도의 안정으로 양질의 에피텍시를 웨이퍼에 성장시킬 수 있으며, 안전한 상태로서 용이하고 신속하게 세척작업을 수행할 수 있고, 챔버(1)를 분해하여 웨트크리닝을 실시하는 것보다 시간이 훨씬 빠르기 때문에 장비의 가동률을 향상시킬 수 있게 된다.Therefore, because the window 5 of the chamber 1 is in a clean state, it is possible to grow a good quality epitaxy on the wafer due to the stability of the epitaxial temperature, and to perform the cleaning operation easily and quickly as a safe state. In addition, since the time is much faster than disassembling the chamber 1 and performing wet cleaning, the operation rate of the equipment can be improved.
이상에서와 같이, 본고안은 에피텍시장비의 챔버(1)내에 설치된 가스인젝터(2)상에 분사관(3)이 착탈가능하게 설치되므로써, 챔버(1) 내에 증착된 규소화합물을 세척시 가스를 챔버(1)내의 상부에서 분사하여 드라이세척방법으로 식각시켜 안전한 상태로서 용이하고 신속하게 세척착업을 수행할 수 있을 뿐만 아니라, 장비의 가동률을 증대시킬 수 있으므로 인해 장비의 효율성 및 신뢰성을 대폭 향상시킨 매우 유용한 고안이다.As described above, the present invention is to clean the silicon compound deposited in the chamber 1 by detachably installed in the injection tube 3 on the gas injector 2 installed in the chamber 1 of the epitaxy equipment. The gas is injected from the upper part of the chamber 1 and etched by the dry washing method, so that the cleaning operation can be performed easily and quickly as a safe state, and the operation rate of the equipment can be increased, thereby greatly improving the efficiency and reliability of the equipment. It is a very useful design.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019930020236U KR970002426Y1 (en) | 1993-10-04 | 1993-10-04 | Apparatus for cleaning epitaxial chamber |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019930020236U KR970002426Y1 (en) | 1993-10-04 | 1993-10-04 | Apparatus for cleaning epitaxial chamber |
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| Publication Number | Publication Date |
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| KR950012593U KR950012593U (en) | 1995-05-17 |
| KR970002426Y1 true KR970002426Y1 (en) | 1997-03-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150069702A (en) * | 2013-12-16 | 2015-06-24 | 주식회사 엘지실트론 | Apparatus and Method for Cleaning Process Chamber |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150069702A (en) * | 2013-12-16 | 2015-06-24 | 주식회사 엘지실트론 | Apparatus and Method for Cleaning Process Chamber |
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| KR950012593U (en) | 1995-05-17 |
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