KR970000424B1 - Semiconductor device and fabricating method thereof - Google Patents

Semiconductor device and fabricating method thereof Download PDF

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Publication number
KR970000424B1
KR970000424B1 KR92017307A KR920017307A KR970000424B1 KR 970000424 B1 KR970000424 B1 KR 970000424B1 KR 92017307 A KR92017307 A KR 92017307A KR 920017307 A KR920017307 A KR 920017307A KR 970000424 B1 KR970000424 B1 KR 970000424B1
Authority
KR
South Korea
Prior art keywords
semiconductor device
fabricating method
fabricating
semiconductor
Prior art date
Application number
KR92017307A
Other languages
Korean (ko)
Inventor
Dakasi Guroi
Sigeki Gomori
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of KR970000424B1 publication Critical patent/KR970000424B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02634—Homoepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
KR92017307A 1991-09-27 1992-09-23 Semiconductor device and fabricating method thereof KR970000424B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3249553A JPH0590272A (en) 1991-09-27 1991-09-27 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
KR970000424B1 true KR970000424B1 (en) 1997-01-09

Family

ID=17194710

Family Applications (1)

Application Number Title Priority Date Filing Date
KR92017307A KR970000424B1 (en) 1991-09-27 1992-09-23 Semiconductor device and fabricating method thereof

Country Status (3)

Country Link
JP (1) JPH0590272A (en)
KR (1) KR970000424B1 (en)
DE (1) DE4218685A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5773356A (en) * 1996-02-20 1998-06-30 Micron Technology, Inc. Gettering regions and methods of forming gettering regions within a semiconductor wafer
ATE522927T1 (en) * 2006-01-20 2011-09-15 Infineon Technologies Austria METHOD FOR PRODUCING AN N-DOPED ZONE IN A SEMICONDUCTOR WAFER AND SEMICONDUCTOR COMPONENT
DE102006002903A1 (en) * 2006-01-20 2007-08-02 Infineon Technologies Austria Ag Treatment of oxygen-containing semiconductor wafer, comprises irradiating second side of wafer with high-energy particles to produce crystal defects in second semiconductor region of wafer, and heating wafer
JP4878356B2 (en) * 2008-05-21 2012-02-15 日本電信電話株式会社 Manufacturing method of waveguide type photoreceiver

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4415373A (en) * 1981-11-17 1983-11-15 Allied Corporation Laser process for gettering defects in semiconductor devices
JPH0338044A (en) * 1989-07-05 1991-02-19 Toshiba Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPH0590272A (en) 1993-04-09
DE4218685A1 (en) 1993-04-08

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