KR960043101A - Device isolation insulating film formation method of semiconductor device - Google Patents

Abstract

The present invention relates to a method of forming a device isolation insulating film of a semiconductor device, and etching the second insulating film using a first photoresist pattern formed on the semiconductor substrate using a first and a second insulating film and a device isolation mask as a mask. A second photoresist pattern is formed over the entire surface to expose only the peripheral circuit portion, and a high concentration of ion implantation layer is formed by implanting a high concentration of impurity ions. After the first and second photoresist patterns are removed, trenches are formed using the upper structure as a mask, and the trenches are buried, and then a trench type isolation layer is formed in the cell portion to enable high integration of semiconductor devices and thereby improve reliability of the semiconductor devices. It is a technology that can be done.

Description

Device isolation insulating film formation method of semiconductor device

As this is a public information case, the full text was not included.

1E to 1F are cross-sectional views showing a method of forming an isolation film in a semiconductor device according to an embodiment of the present invention.

Claims (7)

Sequentially forming a first insulating film and a second insulating film on the semiconductor substrate, forming a first photosensitive film pattern on the second insulating film, and etching the second insulating film using the first photosensitive film pattern as a mask. Forming a second photoresist film pattern on the entire surface, forming a high concentration ion implantation layer on the semiconductor substrate of the peripheral circuit portion by implanting a high concentration of impurity ions on the entire surface; Removing the photoresist pattern and the first photoresist pattern, oxidizing the semiconductor substrate on which the highly ion implanted layer is formed to form a LOCOS type isolation layer, and using the second insulating layer and the LOCOS type isolation layer as masks Forming a trench by etching the semiconductor substrate at a predetermined depth; forming a third insulating film over the entire surface; and planarization etching process. Etching the third insulating film and method of forming the second insulating film and device isolation insulating film of a semiconductor device including a step of forming a first trench device isolation insulating film on the cell by removing the first insulating film in sequence. The method of claim 1, wherein the first insulating layer and the third insulating layer are oxide films. The method of claim 1, wherein the first insulating film is 150 to 300 A method of forming a device isolation insulating film of a semiconductor device, characterized in that formed in a thickness. The method of claim 1, wherein the first photoresist layer pattern is formed by an etching process using an element isolation mask. The method of claim 1, wherein only the peripheral circuit part is exposed in the second photoresist pattern. According to claim 1, wherein the LOCOS type device isolation insulating film is 500 to 5000 A method of forming a device isolation insulating film of a semiconductor device, characterized in that formed in a thickness. The method of claim 1, wherein the trench is 500 to 3500 A device isolation insulating film formation method for a semiconductor device, characterized in that formed in depth. ※ Note: The disclosure is based on the initial application.