KR960042845A - Surface Modification System of Field Emitter Using Continuous Oscillation Laser - Google Patents
Surface Modification System of Field Emitter Using Continuous Oscillation Laser Download PDFInfo
- Publication number
- KR960042845A KR960042845A KR1019950012348A KR19950012348A KR960042845A KR 960042845 A KR960042845 A KR 960042845A KR 1019950012348 A KR1019950012348 A KR 1019950012348A KR 19950012348 A KR19950012348 A KR 19950012348A KR 960042845 A KR960042845 A KR 960042845A
- Authority
- KR
- South Korea
- Prior art keywords
- laser
- continuous oscillation
- emitter
- surface modification
- field emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000010355 oscillation Effects 0.000 title claims abstract description 22
- 230000004048 modification Effects 0.000 title claims abstract description 11
- 238000012986 modification Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 239000004215 Carbon black (E152) Substances 0.000 claims 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 229930195733 hydrocarbon Natural products 0.000 claims 2
- 150000002430 hydrocarbons Chemical class 0.000 claims 2
- 230000000737 periodic effect Effects 0.000 claims 2
- 239000012495 reaction gas Substances 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 1
- 239000001569 carbon dioxide Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000003993 interaction Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000010791 quenching Methods 0.000 abstract 1
- 230000000171 quenching effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
Landscapes
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
연속발진(CW) 레이저를 이용하여 필드 에미터의 표면개질을 실시하면, 연속발진(CW) 레이저가 조사된 팁 에미터의 표면은 고체-레이저 상호작용(12solid-laser interaction)에 의해 연속발진(CW) 레이저의 일부분이 에미터 표면에 흡수되며 에미터 표면은 순간적으로 열이 발생되어 팁 표면의 국부적인 가열 및 용융과 급냉과정을 반복하게 된다. 이때, 에미터 표면에서 약하게 결합되어 있던 원자들의 일부는 기화하거나 승화된다. 이러한 결과로 에미터 표면은 기계적으로 경화되고 구조적으로 치밀해지며, 제조공정중 에미터 표면에 흡착되어 있던 불순물들이 탈착되어 에미터의 일함수(work function)를 감소시킴으로써, 종래 팁 형 에미터에서 발생하는 동작중의 팁 파괴현상을 방지하고, 전자 방출 특성을 현저히 개선시켜, 장시간 동안 안정적인 전자방출을 할 수 있는 필드 에미션 소자를 제공할 수 있다.When surface modification of field emitters is performed using a continuous oscillation (CW) laser, the surface of the tip emitter irradiated with the continuous oscillation (CW) laser is subjected to continuous oscillation by 12 solid-laser interaction. CW) A portion of the laser is absorbed by the emitter surface and the emitter surface is instantaneously heated to repeat the local heating, melting and quenching of the tip surface. At this time, some of the atoms that were weakly bonded at the emitter surface are vaporized or sublimed. As a result, the emitter surface is mechanically hardened and structurally compacted, and impurities adsorbed on the emitter surface during the manufacturing process are desorbed to reduce the work function of the emitter. It is possible to provide a field emission device capable of preventing tip breakage during operation, remarkably improving electron emission characteristics, and allowing stable electron emission for a long time.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1A도 내지 제1C도는 본 발명에 따른 연속발진(CW; continuous wave) 레이저를 이용한 필드 에미터의 표면 개질 방법을 순차적으로 각각 나타낸 정단면도, 제2A도 내지 제2C도는 본 발명에 따른 연속발진(CW) 레이저를 이용한 또다른 필드 에미터의 표면 개질 방법을 순차적으로 각각 나타내 정단면도, 제3도는 본 발명에 따른 연속발진(CW) 레이저를 이용한 필드 에미터의 표면 개질 장치를 나타낸 개략도, 제4A도는 본 발명에 따른 연속발진(CW) 레이저를 이용한 필드 에미터의 표면 개질시 펄스 레이저의 지그재그형 스캐닝(scanning)과 기판홀더의 이동방향을 나타낸 도해도, 제4B도는 본 발명에 따른 연속발진(CW) 레이저를 이용한 또다른 필드 에미터의 표면 개질시 펄스 레이저의 나선(spiral)형 스캐닝(scanning)과 기판홀더의 이동방향을 나타낸 도해도.1A to 1C are front cross-sectional views sequentially illustrating a method of surface modification of a field emitter using a continuous wave (CW) laser according to the present invention, and FIGS. 2A to 2C are continuous oscillations according to the present invention. (CW) A cross sectional view showing another method of surface modification of a field emitter using a laser sequentially, FIG. 3 is a schematic view showing a surface modification apparatus of a field emitter using a continuous oscillation (CW) laser according to the present invention. Figure 4A is a diagram showing the zigzag scanning of the pulse laser and the direction of movement of the substrate holder during surface modification of the field emitter using a continuous oscillation (CW) laser according to the present invention, Figure 4B is a continuous oscillation according to the present invention (CW) Schematic diagram showing the spiral scanning of a pulsed laser and the direction of movement of the substrate holder during surface modification of another field emitter using a (CW) laser.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950012348A KR960042845A (en) | 1995-05-18 | 1995-05-18 | Surface Modification System of Field Emitter Using Continuous Oscillation Laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950012348A KR960042845A (en) | 1995-05-18 | 1995-05-18 | Surface Modification System of Field Emitter Using Continuous Oscillation Laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR960042845A true KR960042845A (en) | 1996-12-21 |
Family
ID=66525663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950012348A Ceased KR960042845A (en) | 1995-05-18 | 1995-05-18 | Surface Modification System of Field Emitter Using Continuous Oscillation Laser |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR960042845A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100787630B1 (en) * | 2006-05-24 | 2007-12-21 | 경희대학교 산학협력단 | Display element and manufacturing method thereof |
-
1995
- 1995-05-18 KR KR1019950012348A patent/KR960042845A/en not_active Ceased
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100787630B1 (en) * | 2006-05-24 | 2007-12-21 | 경희대학교 산학협력단 | Display element and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Arai et al. | Two‐photon processes in defect formation by excimer lasers in synthetic silica glass | |
| CA2051210C (en) | Cutting of organic solids by continuous wave ultraviolet irradiation | |
| US3527198A (en) | Method and apparatus for working diamonds by means of laser light beam | |
| JP6309078B2 (en) | Laser produced plasma EUV source with reduced debris generation | |
| US4857699A (en) | Means of enhancing laser processing efficiency of metals | |
| KR920703197A (en) | Microwave Plasma Generator and Manufacturing Method of Diamond Film Using the Same | |
| US4877939A (en) | Means of enhancing laser processing efficiency of metals | |
| KR970013540A (en) | A laser processing method for a wiring board, a laser processing apparatus for a wiring board, and a carbon dioxide gas laser oscillator for processing a wiring board | |
| JPS6254005A (en) | Production of hyperfine particles | |
| US5387443A (en) | Laser CVD method for synthesizing diamond | |
| US4891491A (en) | Means of enhancing laser processing efficiency of metals | |
| KR960042845A (en) | Surface Modification System of Field Emitter Using Continuous Oscillation Laser | |
| US4035638A (en) | Isotope separation | |
| KR960042844A (en) | Surface Modification System of Field Emitter Using Pulsed Laser | |
| JPH08213192A (en) | X-ray generator and method of generating the same | |
| KR960030324A (en) | Ion implantation apparatus, ion implantation method and semiconductor device | |
| US6747244B1 (en) | Laser working apparatus, laser working method, method for producing ink jet recording head utilizing such laser working apparatus or method, and ink jet recording head formed by such producing method | |
| JP3379886B2 (en) | Method for synthesizing fullerenes | |
| KR940000905B1 (en) | Introduction device of atom | |
| KR960026124A (en) | Apparatus and method for manufacturing large area thin film using pulsed laser | |
| Gauthier et al. | Time resolved plasma photoemission of myocardium with excimer laser excitation | |
| EP0216933B1 (en) | Method for fabricating an insulating oxide layer on semiconductor substrate surface | |
| JPH1126389A (en) | Diamond modification method | |
| KR970003448A (en) | Diamond thin film manufacturing apparatus using hybrid method of laser and electron beam and manufacturing method | |
| KR960026125A (en) | Diamond-like thin film production apparatus and its manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19950518 |
|
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19950518 Comment text: Request for Examination of Application |
|
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 19980630 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 19980922 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 19980630 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |