KR960042207A - Projection Exposure Method and Photomask - Google Patents
Projection Exposure Method and Photomask Download PDFInfo
- Publication number
- KR960042207A KR960042207A KR1019950012307A KR19950012307A KR960042207A KR 960042207 A KR960042207 A KR 960042207A KR 1019950012307 A KR1019950012307 A KR 1019950012307A KR 19950012307 A KR19950012307 A KR 19950012307A KR 960042207 A KR960042207 A KR 960042207A
- Authority
- KR
- South Korea
- Prior art keywords
- light
- mask
- transmittance
- exposure method
- projection exposure
- Prior art date
Links
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
투광영역에 투과율 조절막이 형성된 마스크를 이용하여 반도체 기판상에 형성되는 패턴을 충실하게 할 수 있는 투영노광방법에 관하여 개시한다. 본 발명은 차광영역과 투광영역을 갖는 마스크를 이용한 노광대상물의 투영노광 방법에 있어서, 상기 투광영역의 일부에 투과율 조절막이 형성된 마스크를 이용하여 상기 노광 대상물을 노광하는 것을 특징으로 하는 투영노광방법을 제공한다. 본 발명에 의하면, 마스크기판의 투광영역에 투과율 조절막을 형성하여 차광영역간의 간섭을 억제함으로써 반도체 기판에 상기 마스크를 전사시킬때 형성되는 패턴의 충실도를 높일 수 있다.A projection exposure method is disclosed in which a pattern formed on a semiconductor substrate can be enriched using a mask in which a transmittance adjustment film is formed in a transmissive region. The present invention provides a projection exposure method of an exposure object using a mask having a light shielding area and a light transmission area, wherein the projection exposure method is characterized by exposing the exposure object using a mask having a transmittance adjusting film formed in a part of the light transmission area. to provide. According to the present invention, the fidelity of the pattern formed when the mask is transferred to the semiconductor substrate can be improved by forming a transmittance adjusting film in the light transmitting area of the mask substrate to suppress interference between the light blocking areas.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제4A도 및 제4B도는 본 발명에 의한 마스크를 도시한 개략도이다.4A and 4B are schematic diagrams showing a mask according to the present invention.
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950012307A KR960042207A (en) | 1995-05-17 | 1995-05-17 | Projection Exposure Method and Photomask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950012307A KR960042207A (en) | 1995-05-17 | 1995-05-17 | Projection Exposure Method and Photomask |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960042207A true KR960042207A (en) | 1996-12-21 |
Family
ID=66525223
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950012307A KR960042207A (en) | 1995-05-17 | 1995-05-17 | Projection Exposure Method and Photomask |
Country Status (1)
Country | Link |
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KR (1) | KR960042207A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100551209B1 (en) * | 2001-09-07 | 2006-02-14 | 에이에스엠엘 네델란즈 비.브이. | Lithographic Apparatus and Device Manufacturing Method |
KR100746625B1 (en) * | 2006-06-29 | 2007-08-08 | 주식회사 하이닉스반도체 | Photomask having a high beam contrast, method of fabricating the photomask, and method of exposing a wafer using the photomask |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03269531A (en) * | 1990-03-20 | 1991-12-02 | Sony Corp | Production of phase shift mask |
JPH05142749A (en) * | 1991-11-25 | 1993-06-11 | Toshiba Corp | Mask for exposure |
JPH05307258A (en) * | 1992-04-30 | 1993-11-19 | Hitachi Ltd | Photomask and its production |
JPH0683032A (en) * | 1992-08-31 | 1994-03-25 | Sony Corp | Phase shift exposing means and production of phase shift mask |
-
1995
- 1995-05-17 KR KR1019950012307A patent/KR960042207A/en active Search and Examination
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03269531A (en) * | 1990-03-20 | 1991-12-02 | Sony Corp | Production of phase shift mask |
JPH05142749A (en) * | 1991-11-25 | 1993-06-11 | Toshiba Corp | Mask for exposure |
JPH05307258A (en) * | 1992-04-30 | 1993-11-19 | Hitachi Ltd | Photomask and its production |
JPH0683032A (en) * | 1992-08-31 | 1994-03-25 | Sony Corp | Phase shift exposing means and production of phase shift mask |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100551209B1 (en) * | 2001-09-07 | 2006-02-14 | 에이에스엠엘 네델란즈 비.브이. | Lithographic Apparatus and Device Manufacturing Method |
KR100746625B1 (en) * | 2006-06-29 | 2007-08-08 | 주식회사 하이닉스반도체 | Photomask having a high beam contrast, method of fabricating the photomask, and method of exposing a wafer using the photomask |
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
J201 | Request for trial against refusal decision | ||
AMND | Amendment | ||
B601 | Maintenance of original decision after re-examination before a trial | ||
J301 | Trial decision |
Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20030711 Effective date: 20040825 |