KR960042207A - Projection Exposure Method and Photomask - Google Patents

Projection Exposure Method and Photomask Download PDF

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Publication number
KR960042207A
KR960042207A KR1019950012307A KR19950012307A KR960042207A KR 960042207 A KR960042207 A KR 960042207A KR 1019950012307 A KR1019950012307 A KR 1019950012307A KR 19950012307 A KR19950012307 A KR 19950012307A KR 960042207 A KR960042207 A KR 960042207A
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KR
South Korea
Prior art keywords
light
mask
transmittance
exposure method
projection exposure
Prior art date
Application number
KR1019950012307A
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Korean (ko)
Inventor
한우성
손창진
이종현
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950012307A priority Critical patent/KR960042207A/en
Publication of KR960042207A publication Critical patent/KR960042207A/en

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  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

투광영역에 투과율 조절막이 형성된 마스크를 이용하여 반도체 기판상에 형성되는 패턴을 충실하게 할 수 있는 투영노광방법에 관하여 개시한다. 본 발명은 차광영역과 투광영역을 갖는 마스크를 이용한 노광대상물의 투영노광 방법에 있어서, 상기 투광영역의 일부에 투과율 조절막이 형성된 마스크를 이용하여 상기 노광 대상물을 노광하는 것을 특징으로 하는 투영노광방법을 제공한다. 본 발명에 의하면, 마스크기판의 투광영역에 투과율 조절막을 형성하여 차광영역간의 간섭을 억제함으로써 반도체 기판에 상기 마스크를 전사시킬때 형성되는 패턴의 충실도를 높일 수 있다.A projection exposure method is disclosed in which a pattern formed on a semiconductor substrate can be enriched using a mask in which a transmittance adjustment film is formed in a transmissive region. The present invention provides a projection exposure method of an exposure object using a mask having a light shielding area and a light transmission area, wherein the projection exposure method is characterized by exposing the exposure object using a mask having a transmittance adjusting film formed in a part of the light transmission area. to provide. According to the present invention, the fidelity of the pattern formed when the mask is transferred to the semiconductor substrate can be improved by forming a transmittance adjusting film in the light transmitting area of the mask substrate to suppress interference between the light blocking areas.

Description

투영노광방법 및 이에 사용되는 포토마스크Projection Exposure Method and Photomask

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제4A도 및 제4B도는 본 발명에 의한 마스크를 도시한 개략도이다.4A and 4B are schematic diagrams showing a mask according to the present invention.

Claims (8)

차광영역과 투광영역을 갖는 마스크를 이용한 노광 대상물의 투영노광 방법에 있어서, 상기 투광영역의 일부에 투과율 조절막이 형성된 마스크를 이용하여 상기 노광 대상물을 노광하는 것을 특징으로 하는 투영노광방법.A projection exposure method of an exposure object using a mask having a light shielding area and a light transmitting area, wherein the exposure object is exposed using a mask having a transmittance adjusting film formed in a part of the light transmitting area. 제1항에 있어서, 상기 노광대상물은 네거티브형 포토레지스트막인 것을 특징으로 하는 투영노광방법.The projection exposure method according to claim 1, wherein the exposure object is a negative photoresist film. 제1항에 있어서, 상기 투과율 조절막은 광투과율이 사용광원의 파장에 대하여 0∼100% 이내에서 조절하는 것을 특징으로 하는 투영노광방법.The projection exposure method according to claim 1, wherein the transmittance adjusting film has a light transmittance adjusted within 0 to 100% with respect to a wavelength of a used light source. 제1항에 있어서, 상기 투과영역에 형성된 투과율 조절막과 차광영역간의 광위상차 ±90 이내로 조절하는 것을 특징으로 하는 투영노광방법.The projection exposure method according to claim 1, wherein the light phase difference between the transmittance adjusting film formed in the transmission region and the light shielding region is adjusted within ± 90 degrees. 투명한 마스크 기판; 상기 마스크 기판 상에 투광영역을 한정하기 위한 차광영역; 및 상기 투광영역의 일부에 마스크 패턴의 전사시 투과율을 조절할 수 있도록 투과율 조절막이 형성되어 있는 것을 특징으로 하는 포토 마스크.Transparent mask substrates; A light blocking area for defining a light transmitting area on the mask substrate; And a transmittance adjusting film is formed in a part of the transmissive area so as to adjust the transmittance when the mask pattern is transferred. 제5항에 있어서, 상기 투과율 조절막은 유기물 또는 무기물로 구성된 것을 특징으로 하는 포토 마스크.The photomask of claim 5, wherein the transmittance adjusting film is formed of an organic material or an inorganic material. 제5항에 있어서, 상기 투과율 조절막은 크롬, 알루미늄, 금, 은, 몰리브덴, 탄탈륨, 티타늄, 질화물, SOG(spin-on-glass) 포토레지스트 및 텅스텐(W)으로 이루어진 일군에 의해 형성된 막중에서 선택된 적어도 하나로 구성된 것을 특징으로 하는 포토마스크.The film of claim 5, wherein the transmittance control film is selected from a film formed by a group consisting of chromium, aluminum, gold, silver, molybdenum, tantalum, titanium, nitride, a spin-on-glass photoresist, and tungsten (W). A photomask comprising at least one. 제1항에 있어서, 상기 투광영역에 형성된 투과율 조절막과 차광영역간의 광위상차 ±90 이내인 것을 특징으로 하는 포토마스크.The photomask of claim 1, wherein an optical phase difference between the transmittance adjusting film formed in the light transmitting region and the light blocking region is within ± 90. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950012307A 1995-05-17 1995-05-17 Projection Exposure Method and Photomask KR960042207A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950012307A KR960042207A (en) 1995-05-17 1995-05-17 Projection Exposure Method and Photomask

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Application Number Priority Date Filing Date Title
KR1019950012307A KR960042207A (en) 1995-05-17 1995-05-17 Projection Exposure Method and Photomask

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100551209B1 (en) * 2001-09-07 2006-02-14 에이에스엠엘 네델란즈 비.브이. Lithographic Apparatus and Device Manufacturing Method
KR100746625B1 (en) * 2006-06-29 2007-08-08 주식회사 하이닉스반도체 Photomask having a high beam contrast, method of fabricating the photomask, and method of exposing a wafer using the photomask

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03269531A (en) * 1990-03-20 1991-12-02 Sony Corp Production of phase shift mask
JPH05142749A (en) * 1991-11-25 1993-06-11 Toshiba Corp Mask for exposure
JPH05307258A (en) * 1992-04-30 1993-11-19 Hitachi Ltd Photomask and its production
JPH0683032A (en) * 1992-08-31 1994-03-25 Sony Corp Phase shift exposing means and production of phase shift mask

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03269531A (en) * 1990-03-20 1991-12-02 Sony Corp Production of phase shift mask
JPH05142749A (en) * 1991-11-25 1993-06-11 Toshiba Corp Mask for exposure
JPH05307258A (en) * 1992-04-30 1993-11-19 Hitachi Ltd Photomask and its production
JPH0683032A (en) * 1992-08-31 1994-03-25 Sony Corp Phase shift exposing means and production of phase shift mask

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100551209B1 (en) * 2001-09-07 2006-02-14 에이에스엠엘 네델란즈 비.브이. Lithographic Apparatus and Device Manufacturing Method
KR100746625B1 (en) * 2006-06-29 2007-08-08 주식회사 하이닉스반도체 Photomask having a high beam contrast, method of fabricating the photomask, and method of exposing a wafer using the photomask

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