KR960042202A - Reticle for Semiconductor Pattern Formation - Google Patents
Reticle for Semiconductor Pattern Formation Download PDFInfo
- Publication number
- KR960042202A KR960042202A KR1019950012603A KR19950012603A KR960042202A KR 960042202 A KR960042202 A KR 960042202A KR 1019950012603 A KR1019950012603 A KR 1019950012603A KR 19950012603 A KR19950012603 A KR 19950012603A KR 960042202 A KR960042202 A KR 960042202A
- Authority
- KR
- South Korea
- Prior art keywords
- reticle
- light
- semiconductor pattern
- refractive index
- film
- Prior art date
Links
Abstract
본 발명은 반도체 패턴형성용 레티클(reticle)에 관한 것으로서, 특히 포토리소그래피 공정중의 노광 공정에서 빛이 투과될 때 석영(Quartz)막과 공기 굴절율이 상이로 인한 빛의 반사 현상을 억제하여 빛의 손실을 막아 패턴 정밀도가 향상될 수 있는 반도체 패턴형성용 레티클에 관한 것으로서, 빛을 투과시키는 석영막에 빛을 투과시키지 않는 크롬이 소정의 패턴으로 형성된 반도체 패턴형성용 레티클에 있어서, 상기 석영막과 크롬 사이에 빛의 반사를 억제하도록 석영막과 공기의 굴절율 차이를 보상하는 굴절율을 가지는 보상막을 개재하여 빛의 손실을 줄여 패턴의 정밀도가 향상될 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reticle for forming a semiconductor pattern. Particularly, when light is transmitted in an exposure process during a photolithography process, the present invention suppresses reflection of light due to a difference between a quartz film and an air refractive index. The present invention relates to a semiconductor pattern forming reticle that prevents loss and improves pattern accuracy. The semiconductor pattern forming reticle in which chromium that does not transmit light is formed in a predetermined pattern in a quartz film that transmits light, wherein the quartz film and The precision of the pattern may be improved by reducing the loss of light through a compensation film having a refractive index that compensates for the difference in refractive index between the quartz film and the air so as to suppress reflection of light between chromium.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
첨부된 도면은 본 발명에 따른 레티클의 구성도.The accompanying drawings are schematic diagrams of a reticle according to the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950012603A KR960042202A (en) | 1995-05-19 | 1995-05-19 | Reticle for Semiconductor Pattern Formation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950012603A KR960042202A (en) | 1995-05-19 | 1995-05-19 | Reticle for Semiconductor Pattern Formation |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960042202A true KR960042202A (en) | 1996-12-21 |
Family
ID=66525318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950012603A KR960042202A (en) | 1995-05-19 | 1995-05-19 | Reticle for Semiconductor Pattern Formation |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960042202A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100810412B1 (en) * | 2006-09-29 | 2008-03-04 | 주식회사 하이닉스반도체 | Reticle and manufacturing method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6327019A (en) * | 1986-07-18 | 1988-02-04 | Fujitsu Ltd | Mask for x-ray exposure |
JPH03168641A (en) * | 1989-11-28 | 1991-07-22 | Fujitsu Ltd | Photomask |
KR0153287B1 (en) * | 1990-06-21 | 1998-11-02 | 가나미야지 준 | Mask for shifting phase |
-
1995
- 1995-05-19 KR KR1019950012603A patent/KR960042202A/en not_active Application Discontinuation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6327019A (en) * | 1986-07-18 | 1988-02-04 | Fujitsu Ltd | Mask for x-ray exposure |
JPH03168641A (en) * | 1989-11-28 | 1991-07-22 | Fujitsu Ltd | Photomask |
KR0153287B1 (en) * | 1990-06-21 | 1998-11-02 | 가나미야지 준 | Mask for shifting phase |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100810412B1 (en) * | 2006-09-29 | 2008-03-04 | 주식회사 하이닉스반도체 | Reticle and manufacturing method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200606577A (en) | Semitransmitting film, photomask blank, photomask, and semitransmitting film designing method | |
EP1152263A4 (en) | Optical device with multilayer thin film and aligner with the device | |
ATE251766T1 (en) | DAMPING EMBEDDED BLANK PHASE SHIFT MASKS | |
KR960009236A (en) | Photomask for Forming T-Gate Electrode | |
KR950006541A (en) | Spatial Filters Used in Reduced Projection Printing Devices | |
ATE209368T1 (en) | BLANK FOR EXPOSURE MASK | |
BR0010541A (en) | Projection display device, and processes for enhancing the optical quality of a projected image on a projection display device and for improving the color gamut of the projected image on a projection display device | |
EP1132772A4 (en) | Halftone phase shift photomask and blanks for halftone phase shift photomask for it and pattern forming method using this | |
KR960029896A (en) | How to form a lithographic mask | |
DK0900410T3 (en) | Photomask blanks with embedded damping phase offset | |
KR950027933A (en) | Phase inversion mask | |
KR960042202A (en) | Reticle for Semiconductor Pattern Formation | |
KR930003264A (en) | Pattern Forming Method Using Phase Shift Mask | |
US6251545B1 (en) | Method and system for improving transmission of light through photomasks | |
KR900019170A (en) | Contrast Optimization Method of Photoresist Layer | |
EP1280006A3 (en) | Method for making lithographic printing plate | |
KR937000886A (en) | Formation method of fine resist pattern | |
AU549224B2 (en) | Photosensitive compositions change opacity with ph change | |
KR950019909A (en) | Photomasks and Photomask Blanks | |
JPS5687043A (en) | Mask for exposure | |
KR910012795A (en) | Reflective Head Projector (Reflective OHP) | |
JPS54107706A (en) | Information recording medium | |
JPH046559A (en) | Method for measuring transmittance of pellicle | |
JPS5225624A (en) | Camera for the offset photoengraving process | |
KR970048926A (en) | Mask and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |