KR960042202A - Reticle for Semiconductor Pattern Formation - Google Patents

Reticle for Semiconductor Pattern Formation Download PDF

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Publication number
KR960042202A
KR960042202A KR1019950012603A KR19950012603A KR960042202A KR 960042202 A KR960042202 A KR 960042202A KR 1019950012603 A KR1019950012603 A KR 1019950012603A KR 19950012603 A KR19950012603 A KR 19950012603A KR 960042202 A KR960042202 A KR 960042202A
Authority
KR
South Korea
Prior art keywords
reticle
light
semiconductor pattern
refractive index
film
Prior art date
Application number
KR1019950012603A
Other languages
Korean (ko)
Inventor
조찬섭
김정희
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950012603A priority Critical patent/KR960042202A/en
Publication of KR960042202A publication Critical patent/KR960042202A/en

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Abstract

본 발명은 반도체 패턴형성용 레티클(reticle)에 관한 것으로서, 특히 포토리소그래피 공정중의 노광 공정에서 빛이 투과될 때 석영(Quartz)막과 공기 굴절율이 상이로 인한 빛의 반사 현상을 억제하여 빛의 손실을 막아 패턴 정밀도가 향상될 수 있는 반도체 패턴형성용 레티클에 관한 것으로서, 빛을 투과시키는 석영막에 빛을 투과시키지 않는 크롬이 소정의 패턴으로 형성된 반도체 패턴형성용 레티클에 있어서, 상기 석영막과 크롬 사이에 빛의 반사를 억제하도록 석영막과 공기의 굴절율 차이를 보상하는 굴절율을 가지는 보상막을 개재하여 빛의 손실을 줄여 패턴의 정밀도가 향상될 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reticle for forming a semiconductor pattern. Particularly, when light is transmitted in an exposure process during a photolithography process, the present invention suppresses reflection of light due to a difference between a quartz film and an air refractive index. The present invention relates to a semiconductor pattern forming reticle that prevents loss and improves pattern accuracy. The semiconductor pattern forming reticle in which chromium that does not transmit light is formed in a predetermined pattern in a quartz film that transmits light, wherein the quartz film and The precision of the pattern may be improved by reducing the loss of light through a compensation film having a refractive index that compensates for the difference in refractive index between the quartz film and the air so as to suppress reflection of light between chromium.

Description

반도체 패턴형성용 레티클Reticle for Semiconductor Pattern Formation

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

첨부된 도면은 본 발명에 따른 레티클의 구성도.The accompanying drawings are schematic diagrams of a reticle according to the present invention.

Claims (3)

빛을 투과시키는 석영막에 빛을 투과시키지 않는 크롬이 소정의 패턴으로 형성된 반도체 패턴형성용 레티클에 있어서, 상기 석영막과 크롬 사이에 빛의 반사를 억제하도록 석영막과 공기의 굴절률 차이를 보상하는 굴절율을 가지는 보상막을 개재한 것을 특징으로 하는 반도체 패턴형성용 레티클.A semiconductor pattern forming reticle in which chromium that does not transmit light is formed in a predetermined pattern in a quartz film that transmits light, wherein the difference in refractive index between the quartz film and air is compensated for suppressing reflection of light between the quartz film and chromium. A reticle for semiconductor pattern formation, comprising a compensation film having a refractive index. 제1항에 있어서, 상기 보상막의 굴절율은 상기 석영막의 굴절율의 제곱근과 동일한 것을 특징으로 하는 반도체 패턴형성용 레티클.The reticle of claim 1, wherein the refractive index of the compensation film is the same as the square root of the refractive index of the quartz film. 제1항 또는 제2항에 있어서, 상기 보상막은 플루오르화 마그네슘인 것을 특징으로 하는 반도체 패턴형성용 레티클.The reticle for semiconductor pattern formation according to claim 1 or 2, wherein the compensation film is magnesium fluoride. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950012603A 1995-05-19 1995-05-19 Reticle for Semiconductor Pattern Formation KR960042202A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950012603A KR960042202A (en) 1995-05-19 1995-05-19 Reticle for Semiconductor Pattern Formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950012603A KR960042202A (en) 1995-05-19 1995-05-19 Reticle for Semiconductor Pattern Formation

Publications (1)

Publication Number Publication Date
KR960042202A true KR960042202A (en) 1996-12-21

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ID=66525318

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950012603A KR960042202A (en) 1995-05-19 1995-05-19 Reticle for Semiconductor Pattern Formation

Country Status (1)

Country Link
KR (1) KR960042202A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100810412B1 (en) * 2006-09-29 2008-03-04 주식회사 하이닉스반도체 Reticle and manufacturing method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6327019A (en) * 1986-07-18 1988-02-04 Fujitsu Ltd Mask for x-ray exposure
JPH03168641A (en) * 1989-11-28 1991-07-22 Fujitsu Ltd Photomask
KR0153287B1 (en) * 1990-06-21 1998-11-02 가나미야지 준 Mask for shifting phase

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6327019A (en) * 1986-07-18 1988-02-04 Fujitsu Ltd Mask for x-ray exposure
JPH03168641A (en) * 1989-11-28 1991-07-22 Fujitsu Ltd Photomask
KR0153287B1 (en) * 1990-06-21 1998-11-02 가나미야지 준 Mask for shifting phase

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100810412B1 (en) * 2006-09-29 2008-03-04 주식회사 하이닉스반도체 Reticle and manufacturing method thereof

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