KR960039570A - High-frequency resonant high voltage generator for X-ray composed of step-down chopper and inverter using semiconductor device (IGBT) - Google Patents

High-frequency resonant high voltage generator for X-ray composed of step-down chopper and inverter using semiconductor device (IGBT) Download PDF

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KR960039570A
KR960039570A KR1019950008189A KR19950008189A KR960039570A KR 960039570 A KR960039570 A KR 960039570A KR 1019950008189 A KR1019950008189 A KR 1019950008189A KR 19950008189 A KR19950008189 A KR 19950008189A KR 960039570 A KR960039570 A KR 960039570A
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inverter
semiconductor device
high voltage
voltage
high frequency
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KR0179096B1 (en
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유동욱
하성운
정호현
박덕신
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변승봉
재단법인 한국전기연구소
정호현
주식회사 현대방사선기계
박던신
주식회사 파 웰
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/539—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency
    • H02M7/5395—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency by pulse-width modulation

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • X-Ray Techniques (AREA)
  • Dc-Dc Converters (AREA)

Abstract

본 발명은 직류정원을 강압용 스위치로 사용되는 반도체소자(IGBT)를 스위칭 주파수20(kHz)로 구동시켜 직류 출력전압을 조정하고 조정된 직류 출력 전압을 받는 고주파 인버터부에서 반도체 소자를 구동시켜 고주파 전압을 발생시킴으로서 다양한 고주파 고전압 발생장치 적용에 용이하며 스위칭소자로 즉시 기동, 정지가 수행되므로 장치의 에너지 절감이 용이하고 회로에 고주파 공진방식을 도입함으로서 스위칭소자의 과도한 전압·전류 스트레스를 제한할 수 있어 장치의 효율상승 및 저가화와 소형, 경량화를 이룩할 수 있고 효율도 아울러 향상시킬 수 있으며 고전압 변환부에 디지털 제어기능을 부여하여 출려전압의 정도가 좋고 응답특성 및 제어특성이 양호하여 제품의 신뢰성 및 안정화를 꾀할수 있다.The present invention adjusts the DC output voltage by driving a semiconductor device (IGBT), which is used as a step-down switch for direct current reduction at a switching frequency of 20 (kHz), and drives the semiconductor device in a high frequency inverter unit receiving a regulated DC output voltage. By generating voltage, it is easy to apply various high frequency high voltage generators, and it is easy to start and stop by switching element, so it is easy to save energy of the device and by introducing high frequency resonance method into circuit, it can limit excessive voltage and current stress of switching element. It can increase the efficiency of the device, reduce the price, achieve the small size and light weight, and improve the efficiency as well. By providing the digital control function to the high voltage converter, the accuracy of the output voltage is good and the response and control characteristics are good. Stabilization can be achieved.

Description

반도체소자(IGBT)를 사용하여 강압형 쵸퍼와 인버터로 구성한X-ray용 고주파 공진형 고전압 발생장치High-frequency resonant high voltage generator for X-ray composed of step-down chopper and inverter using semiconductor device (IGBT)

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 전체 회로도, 제2도는 제1도의 강압용 초퍼 제어회로의 블록도, 제5도는 제1도의 고주파 인버터의 동작회로도.1 is an overall circuit diagram of the present invention, FIG. 2 is a block diagram of the step-down chopper control circuit of FIG. 1, and FIG. 5 is an operation circuit diagram of the high frequency inverter of FIG.

Claims (6)

입력으로 들어온 상용 교류전원은 정류 다이오드(1) 및 필터 리액터(2)와 캐패시터(3)에 의해 직류전원으로 정류시키고, 이 정류된 직류 전원을 반도체소자(4)가 스위칭주파수(20kHz)가 되도록 스위칭함과 아울러 상기 반도체소자(4)의 턴-온(Trun-on)시간을 조정하여 듀티비로 출력이 항상 일정하게 추종하면서 구동될 수 있도록 하는 강압용 초퍼제어회로(5) 및 구동회로(6)와 환류다이오드(7) 및 직류리액터(8), 캐패시터(9)에 의해 강압된 직류전원이 고주파 인버터부(10)에 인가되고, 이 고주파인버터부(10)에 공급되는 직류전원은 디지털 제어회로(11) 및 공진형스위치(S1, S2, S3, S4)의 스위칭 동작에 의해 고주파 교류 전원으로 변화시키고, 상기 인버터부(10)에서 형성된 교류전원은 고주파 고전압변압기(12)와 공진영 캐패시터(13)에 의해 고전압의 고주파 교류전원으로 변하게 되며, 이 고전압 고주파 교류전원을 정류기(14)에 의해 고전압의 직류 전원으로 정류를 시킴과 아울러 정류된 고전압의 직류전원을 X선관(X-ray tube)(15)에 인가하여 응답특성 및 제어영역을 확대시킬 수 있도록 구성한 것을 특징으로 하는 반도체 소자(IGBT)를 사용하여 강압형 초퍼와 인버터로 구성한 X-ray용 고주파 공진형 고전압 발생장치.The commercial AC power supplied to the input is rectified by the rectifier diode (1), the filter reactor (2), and the capacitor (3) into a direct current power source, and the rectified direct current power source is controlled so that the semiconductor device (4) has a switching frequency (20 kHz). A step-down chopper control circuit 5 and a drive circuit 6 for switching and controlling the turn-on time of the semiconductor device 4 so that the output can be driven constantly at a constant ratio. ) And the direct current power stepped down by the reflux diode 7, the DC reactor 8, and the capacitor 9 are applied to the high frequency inverter unit 10, and the DC power supplied to the high frequency inverter unit 10 is digitally controlled. The switching power of the circuit 11 and the resonant switches S 1 , S 2 , S 3 , and S 4 is changed to high frequency AC power, and the AC power formed in the inverter unit 10 is a high frequency high voltage transformer 12. And high frequency bridge of high voltage by resonant capacitor 13 The high voltage high frequency AC power is rectified by the rectifier 14 into a high voltage DC power supply, and the rectified high voltage DC power is applied to the X-ray tube 15 to provide a response characteristic. And an X-ray high frequency resonant high voltage generator comprising a step-down chopper and an inverter using a semiconductor device (IGBT) characterized in that the control area can be enlarged. 제1항에 있어서, 상기 강압용초퍼 제어회로(5)는 직류출력단에서 검출한 전압과 전류는 정전압회로(16)또는 과전류 검출회로(17)를 거쳐 펄스폭변조(PWM) 제어회로(18)로 출력하고, 이 펄스폭 변조(PWM)제어회로(18)에서 나온 신호는 게이트(Gate)구동회로(19)를 거쳐 반도체소자(4)를 구동시키고, 항상 일정한 출력전압을 유지함과 동시에 과전류 검출회로(17)에서는 전류의 설정치보다 크게 될 때 상기 펄스폭 변조(PWM)제어회로(18)에 차단시호 지령을 발생시켜 사용소자 보호 및 복귀신호를 지령할 수 있도록 하는 것을 특징으로 하는 반도체소자(IGBT)를 사용하여 강압형 초퍼와 인버터로 구성한X-ray용 고주파 공진형 고전압 발생장치.2. The step-down chopper control circuit (5) according to claim 1, wherein the voltage and current detected at the direct current output terminal are passed through a constant voltage circuit (16) or an overcurrent detection circuit (17). Signal from the pulse width modulation (PWM) control circuit 18 drives the semiconductor device 4 via a gate drive circuit 19, and maintains a constant output voltage and detects overcurrent at all times. The circuit 17 is characterized in that the semiconductor device is characterized in that when the current is larger than the set value of the current, the pulse width modulation (PWM) control circuit 18 generates a blocking time command so as to command the protection of the used device and the return signal. IGBT) is a high-frequency resonant high voltage generator for X-ray composed of step-down chopper and inverter. 제1항에 있어서, 고주파 인버터부(10)의 스위칭소자(S1,S2,S3,S4)를 구동시키기위한 제어회로의 페이스시프트(Phase Shift) 제어기의 블록도와 PWM 동작파형은 인버터의 게이팅 신호의 페이스 시프트 딜레이 타임(Phase Shift delay time)을 제어하여 고안정 출력 전압을 얻는 것을 특징으로 하는 반도체소자(IGBT)를 사용하여 가압형 초퍼와 인버터로 구성한 X-ray용 고주파 공진형 고전압 발생장치.The block diagram of the phase shift controller of the control circuit for driving the switching elements S 1 , S 2 , S 3 , and S 4 of the high frequency inverter unit 10 includes: A high-frequency resonant high voltage for an X-ray composed of a pressurized chopper and an inverter using a semiconductor device (IGBT), characterized by obtaining a stable output voltage by controlling a phase shift delay time of a gating signal of Generator. 제1항에 있어서, 소프트 스위칭 고주파 인버터 동장은 풀 브릿지 인버터부 오른편 스위치단의 동작회로에서 반주기동안의 동작은 스위치(25)가 도통되었을 때 전류는 준공진 인덕터(26)를 통해 흐르게 되고, 스위치(25)가 턴-오프 되었을 때 인덕터 전류는 캐패시터(27)와 개패시터(28)으로 흐르게 되며, 스위치(29)에 접속된 역별령 다이오드(30)에 인덕터 전류가 흐르면서 도통이 시작되고, 스위치(29)가 턴-온되고 역병렬 다이오드(30)가 도통하는 중에 스위치(29)는 손실없이 턴-온 될수 있되, 공진 전류를 갖는 인버터의 스위칭 모드 동작을 위해서 턴-오프시 캐패시터의 방전에 필요한 에너지보다 인덕터에 축적된 에너지가 커야하는 영전압스위칭(ZVS)의 소프트 스위칭을 이용하여 인버터 동작을 구현하는 것을 특징으로 하는 반도체소자(IGBT)를 사용하여 강압형 초퍼와 인버터로 구성한 X-ray용 고주파 공진형 고전압 발생장치.The method of claim 1, wherein the soft switching high-frequency inverter field is operated in the operation circuit of the switch stage on the right side of the full bridge inverter unit. The half-cycle operation causes the current to flow through the quasi-resonant inductor 26 when the switch 25 is turned on. When the (25) is turned off, the inductor current flows into the capacitor 27 and the capacitor 28, the conduction is started as the inductor current flows through the reverse-reduction diode 30 connected to the switch 29, the switch The switch 29 can be turned on without loss while the (29) is turned on and the anti-parallel diode 30 is conducting, but the discharge of the capacitor during turn-off for switching mode operation of the inverter having a resonance current Step-down using semiconductor device (IGBT), which implements inverter operation by using soft switching of zero voltage switching (ZVS), which requires the energy accumulated in the inductor to be larger than necessary energy. Resonant high-frequency high-voltage generator for X-ray constituted by a chopper and an inverter. 제1항에 있어서. 상기 고주파 고전압 변압기(12)는 자화 인덕턴스 성분과 누설 인덕턴스 성분에 의하여 표현되어지며 여기에 고주파 고전압 변압기의 2차측 표유 캐패시턴스 성분을 고려하고, 고주파 고전압 변압기(12)의 자화 인덕턴스는 무시할 수 있을 정도로 작으며, 누설 인덕턴스 성분은 권수비와 합성 누설 인덕턴스로 표현되어지고, 표유 캐패시턴스 성분에서 2차측 권선과 케이스 접지점과의 캐패시턴스는 무시 할 수 있으며, 아울러 1차측 권선과 2차측 권선과의 캐패시턴스와 1차측 권선과 코어접지 점과의 캐패시턴스는 무시할 수 있을 정도로 작으며, 합성된 권선 캐패시턴스는 2차측 권선의 각 코일측 사이의 캐패시턴스 성분이 가장 크게 좌우하게 되므로 고주파 고전압 변압기(12)는 합성 누설 인덕턴스 성분과 합성 권선 표유 캐패시턴스 성분 및 이상적이 변압기의 권선비로 나타낼 수 있으며 상기 변압기를 이용하는 것을 특징으로 하는 반도체소자(IGBT)를 사용하여 강압형 초퍼와 인버터로 구성한X-ray용 고주파 공진형 고전압 발생장치.The method of claim 1. The high frequency high voltage transformer 12 is represented by a magnetizing inductance component and a leakage inductance component, and considering the secondary stray capacitance component of the high frequency high voltage transformer, the magnetizing inductance of the high frequency high voltage transformer 12 is negligibly small. The leakage inductance component is expressed as the turns ratio and the composite leakage inductance, and in the stray capacitance component, the capacitance between the secondary winding and the case ground point can be ignored, and the capacitance between the primary winding and the secondary winding and the primary winding The capacitance between the core and the core ground point is negligibly small, and the synthesized winding capacitance is the most dependent on the capacitance component between each coil side of the secondary winding, so that the high frequency high voltage transformer 12 synthesizes the composite leakage inductance component. Winding stray capacitance components and ideal variations A high-frequency resonant high voltage generator for X-rays comprising a step-down chopper and an inverter using a semiconductor device (IGBT), which may be represented by a winding ratio of an inductor, and uses the transformer. 제1항에 있어서, 디지탈 제어회로(11)에서 CPU는 실시간 제어를 위한 고속 신호 처리용 프로세서를 사용하며, A/D, D/A부분은 2채널 A/D 컨버터(31)부분이 시스템내 인버터의 입력전압과 출력전압값을 입력받아 CPU(33)로 넘겨주고 다시 CPU(33)가 처리한 제어량은 D/A컨버터(32)를 통하여 인버터의 게이팅 신호의 페이스 시프트 딜레이 타임(Phase Shift Delay Time)을 제어하고, A/D 컨버터(31)를 통하여 읽어 들인 데이터를 RS 232C(34)에 의해서 외부에서 모니터링 할 수 있도록 하며, 메모리(35)로 하여금 실시간 제어시의 모든 변화량을 저장하고,A/D로 읽어들인 시스템 데이터 값을 저장하게 하고, 제어시스템을 디지털제어기로 구성하여 제어 알고리즘 수정의 편리성을 도모하므로 실행속도가 빠른 제어 프로그램을 작성하여 제어 알고리즘 수행시간을 단축하는 것을 특징으로 하는 반도체소자(IGBT)를 사용하여 강압형 초퍼와 인버터로 구성한 X-ray용 고주파 공진형 고전압 발생장치.The CPU of claim 1, wherein in the digital control circuit 11, the CPU uses a high-speed signal processing processor for real-time control, and the A / D and D / A portions are two-channel A / D converters 31 in the system. The input voltage and output voltage of the inverter are input to the CPU 33, and the control amount processed by the CPU 33 is the phase shift delay time of the gating signal of the inverter through the D / A converter 32. Time), the data read through the A / D converter 31 can be externally monitored by the RS 232C 34, the memory 35 stores all the changes in real time control, It saves the system data value read by A / D and configures the control system as a digital controller for the convenience of modifying the control algorithm. Therefore, the execution time of the control algorithm is shortened by creating a control program with fast execution speed. A semiconductor element (IGBT) with high-frequency resonance type high-voltage generator for X-ray is configured as a step-down chopper and the inverter uses the apparatus. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950008189A 1995-04-08 1995-04-08 High-frequency resonant high voltage generator for X-ray composed of step-down chopper and inverter using semiconductor device Expired - Lifetime KR0179096B1 (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
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KR100386857B1 (en) * 2000-12-13 2003-06-09 (주)에스피에스 The power input unit for using both AC and DC
KR100392310B1 (en) * 2001-05-14 2003-07-22 한국전기연구원 Step down AC regulator and its control method
KR100464050B1 (en) * 2002-06-11 2005-01-03 엘지전자 주식회사 Driving circuit for induction motor
WO2014093278A1 (en) * 2012-12-10 2014-06-19 Enphase Energy, Inc. Method and apparatus for modulating lower powers in resonant converters
WO2016003923A1 (en) * 2014-06-30 2016-01-07 Skyworks Solutions, Inc. Circuits, devices and methods for bypassing voltage regulation in voltage regulators

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KR100333089B1 (en) * 1999-06-02 2002-04-24 권영한 DC/DC convertor using digital signal processing
KR100842734B1 (en) * 2006-06-09 2008-07-01 동국대학교 산학협력단 Three-Level DC-DC Converter Using Zero-Voltage-to-Current Switching

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100386857B1 (en) * 2000-12-13 2003-06-09 (주)에스피에스 The power input unit for using both AC and DC
KR100392310B1 (en) * 2001-05-14 2003-07-22 한국전기연구원 Step down AC regulator and its control method
KR100464050B1 (en) * 2002-06-11 2005-01-03 엘지전자 주식회사 Driving circuit for induction motor
WO2014093278A1 (en) * 2012-12-10 2014-06-19 Enphase Energy, Inc. Method and apparatus for modulating lower powers in resonant converters
WO2016003923A1 (en) * 2014-06-30 2016-01-07 Skyworks Solutions, Inc. Circuits, devices and methods for bypassing voltage regulation in voltage regulators
US10038373B2 (en) 2014-06-30 2018-07-31 Skyworks Solutions, Inc. Circuits, devices and methods for bypassing voltage regulation in voltage regulators

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