KR960039399A - Structure of mask rom - Google Patents

Structure of mask rom Download PDF

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Publication number
KR960039399A
KR960039399A KR1019950009113A KR19950009113A KR960039399A KR 960039399 A KR960039399 A KR 960039399A KR 1019950009113 A KR1019950009113 A KR 1019950009113A KR 19950009113 A KR19950009113 A KR 19950009113A KR 960039399 A KR960039399 A KR 960039399A
Authority
KR
South Korea
Prior art keywords
signal line
mask rom
semiconductor substrate
active
data
Prior art date
Application number
KR1019950009113A
Other languages
Korean (ko)
Other versions
KR0166801B1 (en
Inventor
김남용
Original Assignee
문정환
엘지반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 엘지반도체 주식회사 filed Critical 문정환
Priority to KR1019950009113A priority Critical patent/KR0166801B1/en
Publication of KR960039399A publication Critical patent/KR960039399A/en
Application granted granted Critical
Publication of KR0166801B1 publication Critical patent/KR0166801B1/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
    • H10B20/38—Doping programmed, e.g. mask ROM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/60—Peripheral circuit regions

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  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

본 발명은 마스크 롬의 구조에 관한 것으로, 특히 마스크 롬에 대한 소자의 고집적도, 수율을 향상하도록 한 마스크 롬의 구조를 제공하는데 그 목적이 있다.The present invention relates to a structure of a mask rom, and more particularly, to provide a structure of a mask rom to improve the high integration and yield of the device with respect to the mask rom.

상기 목적을 달성하기 위한 본 발명의 마스크 롬의 구조는 반도체기판, 상기 반도체기판상에 일정간격을 갖고 일방향으로 복수개 배열되어 각 영역의 양측이 연결되도록 형성되는 활성영역, 상기 각 활성영역과, 교차되도록 반도체기판상에 격리되어 형성되는 복수개의 제1신호라인, 상기 활성영역에 콘택되는 일 제2신호라인으로 구성되어 활성영역의 갯수에 상응하는 제1신호라인은 데이타의 출력을 선택하기 위한 데이타 선택신호라인으로 사용함을 특징으로 한다.The structure of the mask ROM of the present invention for achieving the above object is a semiconductor substrate, an active region formed on the semiconductor substrate with a predetermined interval and arranged in a plurality of directions in one direction so that both sides of each region are connected, and the respective active regions, the intersection The first signal line, which is formed on the semiconductor substrate so as to be separated from each other, and the second signal line contacted to the active area, corresponds to the number of active areas, and the first signal line corresponds to the data for selecting the output of the data. It is used as a selection signal line.

Description

마스크 롬의 구조Structure of mask rom

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 종래의 마스크 롬에 대한 등가회로도 및 레이아웃도, 제2도는 본 발명의 마스크 롬에 대한 등가회로도 및 레이아웃도.1 is an equivalent circuit diagram and layout diagram of a conventional mask ROM, and FIG. 2 is an equivalent circuit diagram and layout diagram of a mask ROM of the present invention.

Claims (1)

반도체기판, 상기 반도체기판상에 일정간격을 갖고 일정방향으로 복수개 배열되어 각 영역의 양측이 연결되도록 형성되는 활성영역, 상기 각 활성영역과 교차되도록 반도체기판상에 격리되어 형성되는 복수개의 제1신호라인, 상기 활성영역에 콘택되는 일 제2 신호라인으로 구성되어 활성영역의 갯수에 상응하는 제1신호라인은 데이타의 출력을 선택하기 위한 데이타 선택신호라인으로 사용함을 특징으로 하는 마스크 롬의 구조.A plurality of first signals formed on a semiconductor substrate, the plurality of active signals being arranged on the semiconductor substrate at predetermined intervals in a predetermined direction so that both sides of each region are connected to each other, and being separated on the semiconductor substrate so as to cross each of the active regions; And a second signal line contacting the active area, the first signal line corresponding to the number of active areas being used as a data selection signal line for selecting an output of data. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950009113A 1995-04-18 1995-04-18 Structure of mask rom KR0166801B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950009113A KR0166801B1 (en) 1995-04-18 1995-04-18 Structure of mask rom

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950009113A KR0166801B1 (en) 1995-04-18 1995-04-18 Structure of mask rom

Publications (2)

Publication Number Publication Date
KR960039399A true KR960039399A (en) 1996-11-25
KR0166801B1 KR0166801B1 (en) 1999-01-15

Family

ID=19412441

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950009113A KR0166801B1 (en) 1995-04-18 1995-04-18 Structure of mask rom

Country Status (1)

Country Link
KR (1) KR0166801B1 (en)

Also Published As

Publication number Publication date
KR0166801B1 (en) 1999-01-15

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