KR960035889A - MOS transistor metal pattern formation method - Google Patents

MOS transistor metal pattern formation method Download PDF

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Publication number
KR960035889A
KR960035889A KR1019950006371A KR19950006371A KR960035889A KR 960035889 A KR960035889 A KR 960035889A KR 1019950006371 A KR1019950006371 A KR 1019950006371A KR 19950006371 A KR19950006371 A KR 19950006371A KR 960035889 A KR960035889 A KR 960035889A
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KR
South Korea
Prior art keywords
photoresist
film
metal
etching
aluminum
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Application number
KR1019950006371A
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Korean (ko)
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KR0165759B1 (en
Inventor
황준
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019950006371A priority Critical patent/KR0165759B1/en
Publication of KR960035889A publication Critical patent/KR960035889A/en
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Publication of KR0165759B1 publication Critical patent/KR0165759B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

1.청구 범위에 기재된 발명이 속한 기술분야1. Technical field to which the invention described in the claims belongs

고집적 반도체 소자의 제조 방법.Method for manufacturing a highly integrated semiconductor device.

2.발명이 해결하려고 하는 기술적 과제2. Technical problem that the invention tries to solve

종래에는 반사율이 높은 금속인 알루미늄이 식각시, 포토레지스트와의 식각 비율이 비슷하므로 알루미늄의 과도 식각을 방지하기 위하여 포토레지스트를 두껍게 도포한 결과, 해상력이 저하되어 미세 패턴의 형성이 어려웠다는 문제점을 해결하고자 함.Conventionally, since aluminum, which is a metal having high reflectance, is similarly etched with a photoresist, the photoresist is thickly applied to prevent over-etching of aluminum, resulting in poor resolution and difficulty in forming a fine pattern. To solve.

3.발명의 해결방법의 요지3. Summary of the solution of the invention

반사율이 높은 금속인 알루미늄의 식각시, 금속의 표면에 산소 이온을 주입하고, 탈이온수에의 담금 및 세정을 통하여 산소 이온을 주입한 부분에만 삼산화알루미늄(Al2O3)을 성장시켜 이를 식각 배리어로 이용하여 미세한 금속 패턴을 형성시킴.When etching aluminum, which is a metal with high reflectance, oxygen trioxide (Al 2 O 3 ) is grown only on the portion in which oxygen ions are implanted by immersing and cleaning the deionized water and then etching it. To form a fine metal pattern.

4.발명의 중요한 용도4. Important uses of the invention

MOSFET 제조에 이용됨.Used to manufacture MOSFETs.

Description

모스 트랜지스터 금속 패턴 형성방법MOS transistor metal pattern formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1A도 내지 제1D도는 본 발명의 모스 트랜지스터 금속 패턴 형성 방법에 따른 제조 공정도.1A to 1D are manufacturing process diagrams according to the MOS transistor metal pattern forming method of the present invention.

Claims (6)

모스 트랜지스터 금속 패턴 형성 방법에 있어서, 반도체 기판상에 절연막이 형성된 구조 상부에 금속층을 증착하는 단계와, 전체 구조 상부에 반사 방지막을 도포하고, 그 위에 소정의 두께로 포토레지스트를 도포하는 단계와, 금속 패턴이 형성될 부분만 오픈되도록 하는 포토레지스트 패턴을 형성하는 단계와, 상기 포토레지스트 패턴을 식각 배리어로 이용하여 상기 반사방지막을 식각하는 단계와, 산소 이온을 주입하고 잔류 포토레지스트를 제거한 후, 소정 온도의 탈이온수에의 담금 및 세정을 통하여 금속 산화막을 형성하는 단계 및, 상기 금속 산화막을 식각 배리어로 이용하여 상기 반사 방지막과 금속층을 차례로 식각하는 단계를 포함해서 이루어진 모스트랜지스터 금속패턴 형성방법.A method of forming a MOS transistor metal pattern, comprising the steps of: depositing a metal layer over a structure on which an insulating film is formed on a semiconductor substrate, applying an antireflection film over the entire structure, and applying a photoresist to a predetermined thickness thereon; Forming a photoresist pattern to open only a portion where a metal pattern is to be formed; etching the antireflection film using the photoresist pattern as an etch barrier; implanting oxygen ions and removing residual photoresist; Forming a metal oxide film by immersion and cleaning in deionized water at a predetermined temperature; and etching the anti-reflection film and the metal layer sequentially using the metal oxide film as an etch barrier. 제1항에 있어서, 상기 금속층은 알루미늄으로 이루어지고, 상기 금속 산화막은 삼산화알루미늄으로 이루어진 것을 특징으로 하는 모스 트랜지스터 금속 패턴 형성 방법.The method of claim 1, wherein the metal layer is made of aluminum, and the metal oxide film is made of aluminum trioxide. 제1항 또는 제2항에 있어서, 상기 반사 방지막은 질화막으로 이루어진 것을 특징으로 하는 모스 트랜지스터 금속 패턴 형성 방법.The method of claim 1, wherein the anti-reflection film is formed of a nitride film. 제1항 또는 제2항에 있어서, 상기 반사 방지막은 티타늄 질화막으로 이루어진 것을 특징으로 하는 모스 트랜지스터 금속 패턴 형성 방법.The method of claim 1, wherein the anti-reflection film is formed of a titanium nitride film. 제1항에 있어서, 상기 포토레지스트의 두께는 상기 금속층 두께의 약 1/2이 되는 것을 특징으로 하는 모스 트랜지스터 금속 패턴 형성 방법.The method of claim 1, wherein the thickness of the photoresist is about 1/2 the thickness of the metal layer. 제1항에 있어서, 상기 탈이온수의 온도는 약 85℃인 것을 특징으로 하는 모스 트랜지스터 금속 패턴 형성 방법.The method of claim 1, wherein the temperature of the deionized water is about 85 ℃. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950006371A 1995-03-24 1995-03-24 Method of forming metal pattern of mos transistor KR0165759B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950006371A KR0165759B1 (en) 1995-03-24 1995-03-24 Method of forming metal pattern of mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950006371A KR0165759B1 (en) 1995-03-24 1995-03-24 Method of forming metal pattern of mos transistor

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Publication Number Publication Date
KR960035889A true KR960035889A (en) 1996-10-28
KR0165759B1 KR0165759B1 (en) 1999-02-01

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