KR960035155A - Exposure mask - Google Patents

Exposure mask Download PDF

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Publication number
KR960035155A
KR960035155A KR1019950006132A KR19950006132A KR960035155A KR 960035155 A KR960035155 A KR 960035155A KR 1019950006132 A KR1019950006132 A KR 1019950006132A KR 19950006132 A KR19950006132 A KR 19950006132A KR 960035155 A KR960035155 A KR 960035155A
Authority
KR
South Korea
Prior art keywords
pattern
exposure mask
exposure
line width
auxiliary
Prior art date
Application number
KR1019950006132A
Other languages
Korean (ko)
Inventor
김준환
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950006132A priority Critical patent/KR960035155A/en
Publication of KR960035155A publication Critical patent/KR960035155A/en

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Abstract

본 발명은 노광마스크에 관한 것으로, 석영기관 상부에 크롬패턴을 형성하되, 셀부를 노광시키는 크롬패턴사이에 보조패턴을 형성함으로써 상기 노광마스크를 이용한 리소그래픽 공정시 균일한 감광막패턴을 형성하여 반도체소자의 신뢰성을 향상시킬 수 있는 기술이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure mask, in which a chromium pattern is formed on a quartz body, and an auxiliary pattern is formed between chromium patterns for exposing a cell part, thereby forming a uniform photoresist pattern during a lithographic process using the exposure mask. It is a technology that can improve the reliability.

Description

노광마스크Exposure mask

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 및 제2B도는 본 발명의 실시예에 따른 노광마스크 및 감광막패턴을 도시한 개략도.2A and 2B are schematic diagrams showing an exposure mask and a photoresist pattern according to an embodiment of the present invention.

Claims (3)

석영기판 상부에 크롬패턴이 형성되되, 셀부에 패턴을 형성하는 크램패턴과 크롬패턴 사이에 보조패턴이 형성된 것을 특징으로 하는 노광마스크.Exposure pattern, characterized in that the chromium pattern is formed on the quartz substrate, the auxiliary pattern is formed between the scramble pattern and the chrome pattern to form a pattern in the cell portion. 제1항에 있어서, 상기 보조패턴은 노광장치, 노광마스크에 형성된 패턴선폭 및 상기 패턴선폭간의 간격 그리고 감광막 공정능력지수에 따라 크기가 조절되는 것을 특징으로 하는 노광마스크.The exposure mask according to claim 1, wherein the auxiliary pattern is sized according to an exposure apparatus, a pattern line width formed on the exposure mask, a gap between the pattern line widths, and a photoresist process capability index. 제1항에 있어서, 상기 보조패턴은 상기 노광마스크 패턴선폭의 0 내지 50%의 선폭으로 형성되는 것을 특징으로 하는 노광마스크.The exposure mask of claim 1, wherein the auxiliary pattern is formed with a line width of 0 to 50% of the exposure mask pattern line width. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950006132A 1995-03-22 1995-03-22 Exposure mask KR960035155A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950006132A KR960035155A (en) 1995-03-22 1995-03-22 Exposure mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950006132A KR960035155A (en) 1995-03-22 1995-03-22 Exposure mask

Publications (1)

Publication Number Publication Date
KR960035155A true KR960035155A (en) 1996-10-24

Family

ID=66552997

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950006132A KR960035155A (en) 1995-03-22 1995-03-22 Exposure mask

Country Status (1)

Country Link
KR (1) KR960035155A (en)

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