KR960032774A - Method for manufacturing thin film semiconductor device - Google Patents

Method for manufacturing thin film semiconductor device Download PDF

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KR960032774A
KR960032774A KR1019960002664A KR19960002664A KR960032774A KR 960032774 A KR960032774 A KR 960032774A KR 1019960002664 A KR1019960002664 A KR 1019960002664A KR 19960002664 A KR19960002664 A KR 19960002664A KR 960032774 A KR960032774 A KR 960032774A
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thin film
cross
energy beam
semiconductor thin
insulating substrate
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KR100402548B1 (en
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마사후미 구니이
야스히로 가나야
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이데이 노부유키
소니 가부시기가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

박막반도체장치의 제조방법은 절연기판상에 반도체박막을 성막하고, 입경의 불균일이 최소로 되는 원하는 입경의 결정을 얻기 위하여, 빔단면강도분포를 제어하면서 소정의 빔단면형상을 가지는 에너지빔을 반도체박막에 조사(照射)하여 반도체박막을 결정화하고, 결정화된 반도박막을 활성층으로 하여 박막트랜지스터를 집적 형성한다. 바람직하게는, 박막트랜지스터는 표시장치의 일부이고, 그러므로 각 박막트랜지스터에 접속된 화소전극을 형성하고, 트랜지스터와 화소전극을 가지는 기판을 전극을 가지는 제2의 절연기판에 사이에 공간을 두어 접합하면, 그 공간을 전기 광학재료로 충전하는 공정을 포함한다. 하나의 양태의 강도제어공정은 단면강도분포의 최대치가 다결정반도체박막의 입경의 급격한 불균일을 초래하는 특정의 스레시홀드치를 초과하지 않도록 제어하는 있다. 변형예에 있어서, 단면강도분포의 최대치와 최소치의 차가 단면강도분포의 평균치의 1/10이하로 되도록 제어한다.A method of manufacturing a thin film semiconductor device is a method of forming a semiconductor thin film on an insulating substrate and forming an energy beam having a predetermined beam cross-sectional shape while controlling the beam cross-section intensity distribution in order to obtain a desired grain diameter, The semiconductor thin film is crystallized by irradiating the thin film, and the thin film transistor is integrated by using the crystallized semiconductive thin film as the active layer. Preferably, the thin film transistor is a part of a display device, and therefore, a pixel electrode connected to each thin film transistor is formed, and a substrate having a transistor and a pixel electrode is bonded to a second insulating substrate having electrodes by placing a space therebetween , And filling the space with an electro-optic material. The intensity control process of one embodiment controls so that the maximum value of the cross-sectional intensity distribution does not exceed a certain threshold value which causes a sharp nonuniformity of the grain size of the polycrystalline semiconductor thin film. In the modified example, the difference between the maximum value and the minimum value of the cross-sectional intensity distribution is controlled to be 1/10 or less of the average value of the cross-sectional intensity distribution.

Description

박막반도체장치의 제조방법Method for manufacturing thin film semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1도는 결정구조를 가지는 반도체막의 성막방법을 행하는 장치의 요부를 나타낸 설명도.FIG. 1 is an explanatory diagram showing a main part of a device for performing a film formation method of a semiconductor film having a crystal structure; FIG.

제2도는 두께55nm의 단결정재료막의 레이저빔의 에너지 강도와 결정입경(結晶粒徑)과의 관계를 나타낸 그래프.2 is a graph showing the relationship between the energy intensity of a laser beam and the crystal grain diameter of a single crystal material film having a thickness of 55 nm.

Claims (18)

절연기판상에 반도체박막을 성막하는 공정과, 소정의 빔단면형상을 가지는 에너지빔을 조사(照射)하여 이 반도체박막을 다결정 반도체박막으로 변환하는 공정과, 이 다결정반도체박막을 활성층으로 하여 박막트랜지스터를 집적형성하는 공정을 행하는 박막반도체장치의 제조방법으로서, 상기 조사공정은 최대치와 최소치의 사이에서 불규칙으로 변동하는 단면강도분포를 가지는 에너지빔을 사용하여 이 반도체박막을 조사할 때, 이 단면강도분포의 최대치가 다결정반도체박막의 입경의 급격한 불균일을 초래하는 특정의 스레시홀드치를 초과하지 않도록 제어하는 것을 특징으로 하는 박막반도체장치의 제조방법.A step of forming a semiconductor thin film on an insulating substrate, a step of irradiating an energy beam having a predetermined beam cross-sectional shape to convert the semiconductor thin film into a polycrystalline semiconductor thin film, Wherein when the semiconductor thin film is irradiated with an energy beam having a cross-sectional intensity distribution irregularly varying between a maximum value and a minimum value, the cross-sectional intensity Wherein the control is performed so that the maximum value of the distribution does not exceed a specific threshold value which causes a sharp unevenness of the grain size of the polycrystalline semiconductor thin film. 제1항에 있어서, 상기 에너지빔은 장척형(長尺形)의 빔단면형상을 가지는 것을 특징으로 하는 박막반도체장치의 제조방법.The method of claim 1, wherein the energy beam has an elongated beam cross-sectional shape. 제1항에 있어서, 상기 에너지빔은 엑시머레이저빔인 것을 특징으로 하는 박막반도체장치의 제조방법.The manufacturing method of a thin film semiconductor device according to claim 1, wherein the energy beam is an excimer laser beam. 제1항에 있어서, 절연기판상에 반도체박막을 성막하는 공정은 CVD법으로 비정질 실리콘의 박막을 성막하는 것을 특징으로 하는 박막반도체장치의 제조방법.The manufacturing method of a thin film semiconductor device according to claim 1, wherein the step of forming the semiconductor thin film on the insulating substrate comprises forming a thin film of amorphous silicon by CVD. 절연기판상에 반도체박막을 성막하는 공정과, 소정의 빔단면형상을 가지는 에너지빔을 조사하여 이 반도체박막을 다결정반도체 박막으로 변환하는 공정과, 이 다결정반도체박막을 활성층으로 하여 박막트랜지스터를 집적형성하는 공정을 행하는 박막반도체장치의 제조방법으로서, 상기 조사공정은 최대치와 최소치의 사이에서 불규칙으로 변동하는 단면강도분포를 가지는 에너지빔을 사용하여 이 반도체박막을 조사할 때, 단면강도분포의 최대치와 최소치의 차가 단면강도분포의 평균치의 1/10이하로 되도록 제어하는 것을 특징으로 하는 박막반도체장치의 제조방법.A step of forming a semiconductor thin film on an insulating substrate, a step of irradiating an energy beam having a predetermined beam cross-sectional shape to convert the semiconductor thin film into a polycrystalline semiconductor thin film, and a step of forming a thin film transistor Wherein when the semiconductor thin film is irradiated with an energy beam having a cross-sectional intensity distribution irregularly varying between a maximum value and a minimum value, the maximum value and the minimum value of the cross-sectional intensity distribution And the difference between the minimum values is controlled to be 1/10 or less of the average value of the cross-sectional strength distributions. 제5항에 있어서, 상기 에너지빔은 장척형의 빔단면형상을 가지는 것을 특징으로 하는 박막반도체장치의 제조방법.6. The method of claim 5, wherein the energy beam has an elongated beam cross-sectional shape. 제5항에 있어서, 빔단면형상의 주변부를 차단하여, 실효적 단면강도분포를 규일화하는 변형된 빔을 생성하는 것을 특징으로 하는 박막반도체장치의 제조방법.6. The method of claim 5, wherein the peripheral portion of the beam cross-sectional shape is cut off to generate a deformed beam that defines the effective cross-sectional strength distribution. 제7항에 있어서, 차단공정은 에너지빔의 단면보다 작은 크기를 가지는 마스크의 광학 개구를 통하여 에너지빔을 조사하여 상기 변형된 에너지빔을 형성하는 것을 특징으로 하는 박막반도체장치의 제조방법.8. The method of claim 7, wherein the blocking process irradiates the energy beam through the optical aperture of the mask having a size smaller than the cross section of the energy beam to form the deformed energy beam. 제5항에 있어서, 상기 에너지빔은 엑시머레이저빔인 것을 특징으로 하는 박막반도체장치의 제조방법.6. The method of claim 5, wherein the energy beam is an excimer laser beam. 제5항에 있어서, 절연기판상에 반도체박막을 성막하는 공정은 CVD법으로 비정질의 박막을 성막하는 것을 특징으로 하는 박막반도체장치의 제조방법.The method for manufacturing a thin film semiconductor device according to claim 5, wherein the step of forming the semiconductor thin film on the insulating substrate comprises forming an amorphous thin film by CVD. 제1의 절연기판상에 반도체박막을 성막하는 공정과, 소정의 빔단면형상을 가지는 에너지빔을 조사하여 이 반도체박막을 다결정반도체 박막으로 변환하는 공정과, 이 다결정반도체박막을 활성층으로 하여 박막트랜지스터를 집적형성하는 공정과, 이 박막트랜지스터에 접속하여 화소전극을 형성하는 공정과, 전극이 형성된 제2의 절연기판을 제1의 절연기판에 그 사이에 공간을 두어 접합하는 공정과, 제1 및 제2이 절연기판의 사이에 전기광학물질을 주입하는 공정을 행하는 표시장치의 제조방법으로서, 상기 조사공정은 최대치와 최소치의 사이에서 불규칙으로 변동하는 단면강도분포를 가지는 에너지빔을 사용하여 이 반도체박막을 조사할 때, 이 단면강도분포의 최대치가 다결정반도체박막의 입경의 급격한 불균일을 초래하는 특정의 스레시홀드치를 초과하지 않도록 제어하는 것을 특징으로 하는 표시장치의 제조방법.A step of forming a semiconductor thin film on the first insulating substrate, a step of irradiating an energy beam having a predetermined beam cross-sectional shape to convert the semiconductor thin film into a polycrystalline semiconductor thin film, A step of forming a pixel electrode by connecting to the thin film transistor, a step of bonding a second insulating substrate on which electrodes are formed to a first insulating substrate by providing a space therebetween, And a second step of injecting electro-optic material between the insulating substrates, wherein the step of irradiating is performed using an energy beam having a cross-sectional intensity distribution irregularly varying between a maximum value and a minimum value, When the thin film is irradiated, the maximum value of the cross-sectional intensity distribution is a specific threshold value which causes a sharp unevenness of the particle diameter of the polycrystalline semiconductor thin film Is not exceeded. ≪ / RTI > 제11항에 있어서, 상기 에너지빔은 장척형의 빔단명형상을 가지는 것을 특징으로 하는 표시장치의 제조방법.12. The method of claim 11, wherein the energy beam has an elongated beam short shape. 제1의 절연기판상에 반도체박막을 성막하는 공정과, 소정의 빔단면형상을 가지는 에너지빔을 조사하여 이 반도체박막을 다결정반도체 박막으로 변환하는 공정과, 이 다결정반도체박막을 활성층으로 하여 박막트랜지스터를 집적형성하는 공정과, 이 박막트랜지스터에 접속하여 화소전극을 형성하는 공정과, 전극이 형성된 제2의 절연기판을 제1의 절연기판에 그 사이에 공간을 두어 접합하는 공정과, 제1 및 제2의 절연기판의 사이에 전기광학물질을 주입하는 공정을 행하는 표시장치의 제조방법으로서, 상기 조사공정은 최대치와 최소치의 사이에서 불규칙으로 변동하는 단면강도분포를 가지는 에너지빔을 사용하여 이 반도체박막을 조사할 때, 단면강도분포의 최대치와 최소치의 차가 단면강도분포의 평균치의 1/10 이하로 되도록 제어하는 것을 특징으로 하는 표시장치의 제조방법.A step of forming a semiconductor thin film on the first insulating substrate, a step of irradiating an energy beam having a predetermined beam cross-sectional shape to convert the semiconductor thin film into a polycrystalline semiconductor thin film, A step of forming a pixel electrode by connecting to the thin film transistor, a step of bonding a second insulating substrate on which electrodes are formed to a first insulating substrate by providing a space therebetween, And a step of injecting an electro-optical material between the first insulating substrate and the second insulating substrate, characterized in that the irradiating step is a step of irradiating the semiconductor substrate with an energy beam having a cross-sectional intensity distribution irregularly varying between a maximum value and a minimum value, When the thin film is irradiated, the difference between the maximum value and the minimum value of the cross-sectional intensity distribution is controlled to be 1/10 or less of the average value of the cross-sectional intensity distribution Of the display device. 제13항에 있어서, 상기 에너지빔은 장척형의 빔단면형상을 가지는 것을 특징으로 하는 표시장치의 제조방법.14. The method of claim 13, wherein the energy beam has an elongated beam cross-sectional shape. 제13항에 있어서, 상기 에너지빔은 엑시머레이저빔인 것을 특징으로 하는 표시장치의 제조방법.14. The method of claim 13, wherein the energy beam is an excimer laser beam. 제13항에 있어서, 조사공정은 빔단면형상의 주변부를 차단하여, 실효적 단면강도 분포를 균일화하는 변형된 빔을 생성하는 것을 특징으로 하는 표시장치의 제조방법.14. The method of claim 13, wherein the irradiating step is to cut off the periphery of the beam cross-sectional shape to produce a deformed beam that homogenizes the effective cross-sectional intensity distribution. 제16항에 있어서, 차단공정은 변형된 빔의 단면에 대응하는 크기의 광학 개구를 가지는 마스크를 통하여 에너지빔을 통과시키는 것을 특징으로 하는 표시장치의 제조방법.17. The method of claim 16, wherein the blocking process passes the energy beam through a mask having optical apertures of a size corresponding to the cross-section of the deformed beam. 제17항에 있어서, 상기 광학 개구는 장척형의 빔단면형상을 가지는 슬릿인 것을 특징으로 하는 표시장치의 제조방법.18. The method according to claim 17, wherein the optical aperture is a slit having an elongated beam cross-sectional shape. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
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